Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 2689-2691
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We propose a mechanism to explain the anomalous degradation of n+-p-p+ silicon space solar cells. Distinct from previously known mechanisms, it has been shown that the anomalous increase and abrupt decrease of short-circuit current are caused by corresponding changes of the minority carrier lifetime and a conversion of conductivity type. The majority carrier density decreases abruptly due to trapping by the radiation-induced deep donors, which results in an increase of carrier lifetime and resistance, conversion of conductivity type, and anomalous change of solar cell performance. Peak values of the carrier lifetime and short-circuit current decrease with increasing illumination intensity and are sensitive to variations of the weak optical illumination. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126445
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