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  • Institute of Physics  (37)
  • American Institute of Physics (AIP)  (11)
  • International Union of Crystallography (IUCr)  (4)
  • 2000-2004  (52)
  • 1
    Electronic Resource
    Electronic Resource
    Highly erbium-doped zinc–oxide thin film prepared by laser ablation and its 1.54 μm emission dynamics (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7129-7136 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Erbium-doped ZnO (ZnO:Er) thin films were fabricated by the KrF excimer laser ablation technique, which is a useful and simple technique to dope Er atoms on the order of 1020 cm−3 into a host material. As-prepared ZnO:Er films showing strong c-axis orientation with a hexagonal crystalline structure indicate a low electrical resistivity of 6.4×10−3 Ω cm. The sharp and intense photoluminescence (PL) at 1.54 μm originating from the intra-4f transition in the Er3+ ions as well as PL in UV region from the ZnO host were observed even at room temperature. Significant distinction arising from the different Er emission centers responsible for the 1.54 μm emission cannot be found in the temperature dependence between the ZnO:Er and Si:Er film as a reference, except for the PL spectrum feature and main PL peak position. This result suggests the existence of Er emission centers in ZnO:Er and Si:Er films that are different from each other. The details of Er-related 1.54 μm emission dynamics of ZnO:Er films have been investigated for the different excitation conditions, where the Er3+ ions have been excited either through a carrier-mediated process in the ZnO host, or through direct pumping into the 4f energy level of the Er3+ ions. There is no change in the 1.54 μm PL spectrum feature in spite of the different excitation conditions, whereas a sensible change can be seen in the rise time of the 1.54 μm emission. The shorter rise time of the 1.54 μm emission observed for indirect excitation implies an excitation efficiency superior to the direct excitation of Er3+ ions. This result indicates that the ZnO:Er thin films are expected to be a promising infrared optoelectronic materials candidate for carrier injection devices because of the high electrical conductivity and high excitation efficiency of the Er3+ ions of an electron–hole-mediated process resulting from ZnO host excitation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326470
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  • 2
    Electronic Resource
    Electronic Resource
    Origin of transconductance oscillations in silicon-on-insulator metal–oxide–semiconductor field-effect transistors with an ultrathin 6-nm-thick active Si layer (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5360-5364 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transconductance oscillations were observed for silicon-on-insulator metal–oxide–semiconductor field-effect transistors with 50 nm channel length and 6 nm Si-layer thickness in the temperature range of 39–50 K. By investigating the temperature dependence of the oscillations it was found that the oscillations were caused by two reasons. One reason is the roughness at the Si/insulator interface responsible for the low-gate-voltage oscillations. The roughness results in different thicknesses of the Si layer along the channel, causing different quantized energy levels, which act as barriers for carriers moving in the channel. The other reason is the tunneling through the potential barrier at the p/n junctions between the contacts and the channel, which is responsible for the high-gate-voltage oscillations. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1459606
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  • 3
    Electronic Resource
    Electronic Resource
    Temperature dependence of optical and electronic properties of moderately doped silicon at terahertz frequencies (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 837-842 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Complex conductivity of moderately P-doped silicon wafers (1.1±0.2 Ω cm at room temperature) has been measured by using a terahertz (THz) time-domain spectroscopy for the temperature and frequency ranges of 20–300 K and 0.2–1.1 THz, respectively. The strong frequency dependence of the complex conductivity due to the free carriers in the THz region is observed and it changes rapidly with temperature, which is interpreted in terms of the increase in mobility and freezing of the free carrier as analyzed by using the simple Drude model. The experimental data deviate slightly from the simple Drude model at low temperatures and becomes apparent with decreasing temperature. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1376673
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  • 4
    Electronic Resource
    Electronic Resource
    Photoemission study of direct photomicromachining in poly(vinylidene fluoride) (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4010-4016 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct pattern transfer onto poly(vinylidene fluoride) was achieved by using x-ray photons from a synchrotron radiation source. Quadrupole mass spectrometry and ultraviolet photoemission spectroscopy, combined with ab initio molecular orbital calculations, were employed to investigate the mechanism of direct photomicromachining. The mass spectrometry identified H2, F, and HF as the etched products, with no carbon containing species being detected. The changes in photoemission spectra due to photodegradation were analyzed by comparison with ab initio molecular orbital calculations. This analysis indicated that a high degree of conjugation is generated in the degraded polymer due to the loss of fluorine atoms. It is concluded that the mechanism of direct photomicromachining is ascribable to the shrinking of the irradiated polymer region due to defluorination and the generation of conjugation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372447
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  • 5
    Electronic Resource
    Electronic Resource
    Status of the Center for Advanced Microstructures and Devices (CAMD)-2001 : Papers from the 12th National Synchrotron Radiation Instrumentation Conference (2002)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 1680-1683 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The current status of the Louisiana State University Center for Advanced Microstructures and Devices electron storage ring, beamlines, and the scientific program are described. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1425391
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  • 6
    Electronic Resource
    Electronic Resource
    Enhanced oxidation of silicon using a collimated hyperthermal ozone beam (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 382-384 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon was oxidized by a collimated hyperthermal ozone beam produced by pulsed-laser ablation of solid ozone to increase the controllability of the silicon dioxide film thickness and to achieve low-temperature oxidation. The oxidation rate could be accurately controlled by the number of laser shots to which the number of supplied ozone molecules was proportional. Ozone molecules with a translational energy of around 1 eV obtained by laser ablation produced an initially rapid oxidized region with no temperature dependence in which a 0.6 nm silicon dioxide film could be synthesized at room temperature with only 200 laser shots. Higher-efficiency oxidation was also achieved in comparison with that by using a spray of ozone with thermal energy. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1380242
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  • 7
    Electronic Resource
    Electronic Resource
    A cross-correlation spectroscopy in subterahertz region using an incoherent light source (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1519-1521 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A subterahertz (sub-THz) spectroscopic system using a multimode laser diode and photoconductive antennas (PA) has been proposed. It employs a random fluctuation of the light intensity to produce the subterahertz radiation from the emitter PA and also to trigger the detector PA. The signal is obtained as the cross correlation between the sub-THz radiation amplitude and laser light intensity. The decrease in the amplitude and phase delay of the radiation due to transmission from a sample can be calculated from the signal in a broad spectral region of sub-THz. This system is applied to the measurement of the complex refractive indices of Si wafers. The obtained dispersion of the refractive indices is well explained by the Drude model. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126082
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  • 8
    Electronic Resource
    Electronic Resource
    Measurement of optical properties of highly doped silicon by terahertz time domain reflection spectroscopy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3923-3925 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical properties of doped silicon wafers have been measured by means of terahertz time domain reflection spectroscopy. A method is proposed to obtain the relative phase by reflection accurately. By using this method, the relative phase is obtained within an error of less than 10 mrad at 1 THz. The experimentally obtained complex conductivity of relatively high-doped silicon (ρ=0.136 Ω cm) in the terahertz region agrees with the simple Drude model. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1413498
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  • 9
    Electronic Resource
    Electronic Resource
    1.54 μm emission dynamics of erbium-doped zinc-oxide thin films (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3935-3937 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Erbium-related 1.54 μm emission dynamics of Er-doped ZnO thin films has been investigated for the different excitation conditions. The excitation was achieved either by exciting indirectly Er3+ ions due to an electron–hole-mediated process or exciting directly discrete energy levels of Er3+ ions. There is no change in the 1.54 μm emission spectrum feature in spite of the different excitation conditions, whereas dramatic change can be seen in the rise time of 1.54 μm emission. The shorter rise time of 1.54 μm emission observed for indirect excitation implies an excitation efficiency superior to direct excitation of Er3+ ions. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126826
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  • 10
    Electronic Resource
    Electronic Resource
    Thin crystalline functional group copolymer poly(vinylidene fluoride–trifluoroethylene) film patterning using synchrotron radiation (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 381-383 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photodegradation mechanism due to synchrotron radiation exposure of crystalline poly[vinylidene fluoride–trifluoroetylene, P(VDF–TrFE)] copolymer thin films has been studied with ultraviolet photoemission spectroscopy (UPS) and mass spectroscopy. Upon increasing exposure to x-ray white light (hν≤1000 eV), UPS measurements reveal that substantial chemical modifications occur in P(VDF–TrFE) 5 monolayer films, including the emergence of new valence band features near the Fermi level, indicating a semimetallic photodegradeted product. The photodetached fragments of the copolymer consist mainly of H2, HF, CHF, CH2. This x-ray exposure study demonstrates that P(VDF–TrFE) films, possessing unique technologically important properties, can be directly patterned by x-ray lithographic processes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125760
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