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  • American Institute of Physics (AIP)  (4)
  • Copernicus
  • 2000-2004  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    High magnetic field studies of two-dimensional electron gas in a GaN/GaAlN heterostructure: Mechanisms of parallel conduction (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1251-1255 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on quantum Hall effect (QHE) and Shubnikov–de-Haas (SdH) measurements for a GaN/GaAlN heterostructure in high magnetic fields (up to 35 T). The observed well defined SdH oscillations, correlated with QHE plateaus, confirm the existence of a two-dimensional electron gas at the GaN/GaAlN interface. The Shubnikov–de-Haas oscillations are superimposed on a strong positive magnetoresistance. We show that this positive magnetoresistance can be linked to a parallel conduction channel. The analysis of the high magnetic field data yields information about the carrier concentration and mobility in this channel. The concentration and mobility of two-dimensional gas and the parallel conduction layer are analyzed in a wide temperature range (1.9–77 K). A physical model (based on the band diagram and mobility calculations) explaining the origin of parallel conduction is presented. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1328788
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  • 2
    Electronic Resource
    Electronic Resource
    Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1228-1230 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the temperature dependence of the mobility of the two-dimensional electron gas in AlGaN/GaN heterostructures grown on bulk GaN substrates. The linear dependence of the inverse mobility on temperature at temperatures below 50 K indicates the importance of acoustic phonon scattering in these high mobility heterostructures. Using the temperature dependence of the mobility at a range of carrier densities, we determined the GaN conduction band deformation potential to be ac=9.1±0.7 eV. This result provides a crucial parameter for accurate calculations of intrinsic mobility limits in AlGaN/GaN heterostructures. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1448401
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  • 3
    Electronic Resource
    Electronic Resource
    Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3433-3435 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The resonant detection of subterahertz radiation by two-dimensional electron plasma confined in a submicron gate GaAs/AlGaAs field-effect transistor is demonstrated. The results show that the critical parameter that governs the sensitivity of the resonant detection is ωτ, where ω is the radiation frequency and τ is the momentum scattering time. By lowering the temperature and hence increasing τ and increasing the detection frequency ω, we reached ωτ∼1 and observed resonant detection of 600 GHz radiation in a 0.15 μm gate length GaAs field-effect transistor. The evolution of the observed photoresponse signal with temperature and frequency is reproduced well within the framework of a theoretical model. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1473685
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  • 4
    Electronic Resource
    Electronic Resource
    Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2409-2411 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A dramatic increase of the conduction band electron mass in a nitrogen-containing III–V alloy is reported. The mass is found to be strongly dependent on the nitrogen content and the electron concentration with a value as large as 0.4m0 in In0.08Ga0.92As0.967N0.033 with 6×1019 cm−3 free electrons. This mass is more than five times larger than the electron effective mass in GaAs and comparable to typical heavy hole masses in III–V compounds. The results provide a critical test and fully confirm the predictions of the recently proposed band anticrossing model of the electronic structure of the III–N–V alloys. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126360
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