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  • American Institute of Physics (AIP)  (10)
  • Springer  (10)
  • Blackwell Publishing Ltd
  • Wiley-Blackwell
  • 2000-2004  (20)
  • 1
    Electronic Resource
    Electronic Resource
    Mechanisms for the improved stability of C54–TiSi2 on (001)Si by the addition of N2 to Ar during Ti sputtering (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1779-1783 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Addition of N2 to Ar during Ti sputtering has been found to improve the thermal stability of TiSi2. For samples sputtered with a mixture of Ar and N2, TiSi2 was found to be stable after 1050 °C, 30 s annealing. Furthermore, the phase transformation temperature from the C49 to C54 phase was not affected with the addition of a small amount of nitrogen. The stuffing of grain boundaries of TiSi2 and TiN/TiSi2 interfaces by nitrogen atoms is thought to retard the transport of Si and Ti atoms. In addition, titanium nitride particles embedded in TiSi2 near the TiN/TiSi2 interface may also protect the TiSi2 films from plastic deformation and retard the grain growth during high temperature annealing. Smaller average grain size of C54–TiSi2 in samples prepared with the addition of N2 to Ar during Ti sputtering than that in pure Ti samples is also beneficial in enhancing the thermal stability. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1385577
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetism in some UCo1/3T2/3Al solid solutions (T=transition metal) (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6812-6814 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the magnetic properties of UCo1/3T2/3Al (T=Ru, Rh, Pt) solid solutions which form in the hexagonal ZrNiAl structure. We performed neutron diffraction and bulk magnetization studies. All three solid solutions exhibit long-range magnetic order at low temperatures. Bulk magnetization studies indicate a ferromagnetic ground state for UCo1/3Ru2/3Al, UCo1/3Rh2/3Al, and UCo1/3Pt2/3Al below 42, 41, and 27 K, respectively. At 4.2 K, the spontaneous moment ranges from ∼0.15 μB/U-atom (UCo1/3Ru2/3Al) to ∼0.49μB/U-atom (UCo1/3Pt2/3Al). Below TC, we find additional weak magnetic contributions in the neutron diffraction data, and our refinement is consistent with magnetic moments along the c axis. The magnitudes of the moments are in good agreement with the spontaneous moments determined from bulk studies. The results are discussed in terms of f–d hybridization, which is modified by changes in the d band occupation and preferential occupation of the transition metals within the lattice. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372850
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  • 3
    Electronic Resource
    Electronic Resource
    Field inhomogeneity effects on photoreflectance spectra of ZnSe/GaAs (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3789-3792 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance measurements from ZnSe epilayers of different thicknesses were carried out. In photoreflectance spectra, the exciton line shape "rotation" is observed to be much slower than that in the reflectance spectra by increasing the epilayer thicknesses. To analyze the exciton line shape rotation quantitatively, the photoreflectance spectra were calculated considering the built-in electric field inhomogeneity effects near the interface as well as the interference effects. Calculated line shapes of the photoreflectance spectra show a good agreement with the observations. Our results imply that inhomogeneity effects of the interface built-in electric field plays an important role in the spectral rotation in photoreflectance. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372415
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  • 4
    Electronic Resource
    Electronic Resource
    Electronic properties of UIrGe in high magnetic fields (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7186-7188 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: UIrGe crystallizes in the orthorhombic TiNiSi structure and exhibits a large magnetic anisotropy. Here, we present the results of magnetoresistance and specific-heat studies of single-crystalline UIrGe in magnetic fields up to 18 T applied along the principal axes. The phase boundaries of the zero-field antiferromagnetic phase (TN(approximate)14.1 K) are established, and we find evidence of a field-induced phase above 12.5 T at 2.1 K and 14 T at 2.5 K for magnetic fields applied along the b and c axis, respectively. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1357847
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  • 5
    Electronic Resource
    Electronic Resource
    Visible and band edge electroluminescence from indium tin oxide/SiO2/Si metal–oxide–semiconductor structures (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 323-326 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Characteristics of electroluminescence from indium tin oxide (ITO)/SiO2/Si metal–oxide–semiconductor (MOS) structures fabricated on both p-type and n-type Si wafers were investigated. The ITO/SiO2/Si MOS on p-type Si could have both the visible and band edge electroluminescence, while the ITO/SiO2/Si MOS on n-type Si has only band edge emission. The reason for the difference is attributed to the impact ionization that only occurs for ITO/SiO2/Si(p) MOS. The study indicates that the band edge emission and visible luminescence are competing processes. The electroluminescence from ITO/SiO2/Si(n) is also discovered to be less than that from the Al/SiO2/Si(n). The reason is possibly due to the damage of the oxide bonding and the SiO2/Si interface during the ITO sputtering. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1331647
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  • 6
    Electronic Resource
    Electronic Resource
    Hot carrier recombination model of visible electroluminescence from metal–oxide–silicon tunneling diodes (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4347-4349 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the visible electroluminescence at room temperature from metal–oxide–silicon tunneling diodes. As biased in the Fowler–Nordheim regime, the electrons tunnel from the gate electrode through the ultrathin oxide and reach the Si anode with sufficiently high energy. The hot electrons cause the impact ionization, and generate the secondary hot electrons and hot holes in Si substrates. The visible light comes from the radiative recombination between the secondary hot electrons and hot holes, and the hot carrier recombination model can fit the visible electroluminescence spectra. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1332825
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  • 7
    Electronic Resource
    Electronic Resource
    Carrier lifetime measurement on electroluminescent metal–oxide–silicon tunneling diodes (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2264-2266 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temporal response of the electroluminescence at the Si band gap energy from a metal–oxide–silicon (MOS) tunneling diode is used to characterize the minority carrier lifetime near the Si/SiO2 interface. The temporal responses reveal that the Shockley–Read–Hall (SRH) recombination lifetimes are 18 and 25.8 μs for the rising and falling edges, respectively, and that the ratio for SRH, radiative, and Auger recombinations is 1:0.196:0.096 at injection current density of 39 A/cm2. The investigation shows that the electroluminescence of the MOS tunneling diode can be significantly increased by reducing the number of the nonradiative recombination centers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405429
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  • 8
    Electronic Resource
    Electronic Resource
    Hydrogen effects on ZnSe/GaAs interface: A photoreflectance study (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 993-995 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe/GaAs heteroepitaxial structures were prepared by metalorganic chemical vapor deposition with the use of thermal cleaning treatments at varying hydrogen flow rates in preparing the substrate. The photoreflectance spectra for the samples prepared revealed Franz–Keldysh oscillation (FKO) signals with the superimposition of free exciton transition features. The FKO signals changed depending on the hydrogen flow rate while the exciton transition features remained unchanged. Fitting through Aspnes' and Franz–Keldysh's model showed that the built-in electric field at the interface increased as the hydrogen flow rate decreased. These results imply that the hydrogen flow rate in the course of thermal etching plays a crucial role in the change of the energy-band profile at the interface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1288814
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  • 9
    Electronic Resource
    Electronic Resource
    Traveling wave electro-optic phase modulators based on intrinsically polar self-assembled chromophoric superlattices (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 587-589 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Traveling-wave electro-optic modulators based on chromophoric self-assembled superlattices (SASs) possessing intrinsically polar microstructures have been designed and fabricated. Although the thickness of the SAS layer is only ∼150 nm, a π-phase shift is clearly observed. From the measured Vπ value, the effective electro-optic coefficient of the SAS film is determined to be ∼21.8 pm/V at an input wavelength of 1064 nm. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389514
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  • 10
    Electronic Resource
    Electronic Resource
    Enhanced reliability of electroluminescence from metal–oxide–silicon tunneling diodes by deuterium incorporation (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1397-1399 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reliability of electroluminescence from metal–oxide–silicon (MOS) tunneling diodes was improved by the incorporation of deuterium. The deuterium was incorporated by the deuterium prebake and the postoxide deuterium annealing. At constant current stress of 100 mA, a deuterium-treated n-channel MOS tunneling light-emitting diode shows that the integrated light emission intensity increases slightly about 6% after 10 000 s operation, while the hydrogen-treated device shows a 30% decrease of the integrated light emission intensity. The hydrogen release by the electrons tunneling from the gate electrode to Si and the formation of interface defects are responsible for the degradation of light output in the hydrogen-treated samples. An annealing model is also given to explain the slight increase of light output in the deuterium-treated samples. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1353817
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