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  • American Institute of Physics (AIP)  (2)
  • Blackwell Publishing Ltd  (1)
  • Oxford University Press  (1)
  • Nature Publishing Group
  • Seismological Society of America (SSA)
  • 2000-2004  (4)
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Year
  • 1
    Publication Date: 2004-02-10
    Print ISSN: 1367-4803
    Electronic ISSN: 1460-2059
    Topics: Biology , Computer Science , Medicine
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6523-6529 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an application of the spall technique for studying the strength, homogeneity, and adhesion of plasma sprayed coatings on a metal substrate. We used a flyer plate impact and a pulsed high-power proton beam to generate short, intense pressure pulses. To study adhesion it is necessary to provide a spall fracture at the interface. This was realized due to the bell-shaped power profile in the ion beam cross section. As a result, the spall fracture inside the samples occurred in tests with the ion beam, at different distances from the surface, including the interface between the coating and the substrate. Using a line-imaging laser-Doppler velocimeter, we were able to measure the free surface velocity histories for a range of load parameters in each experiment. The results of the measurements demonstrate the great influence of annealing on the homogeneity and strength of the coating and a lesser influence of the substrate temperature at coating on the adhesion. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1222-1224 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Besides silicon carbide, group-III nitrides are also suitable large-band-gap semiconductor materials for high-temperature gas sensor devices. Exposing GaN-based Schottky diodes with catalytically active platinum electrodes to hydrogen, we observed a decrease of the rectifying characteristics which we attribute to a decrease in Schottky barrier height. Current–voltage and elastic recoil detection measurements were used to investigate the H-sensing behavior of such devices. Our results indicate an interfacial effect as the origin of the sensor response to hydrogen. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Plant breeding 120 (2001), S. 0 
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: The doubled haploid (DH) wheat line ‘dh 5841’ carrying two translocations from rye, 5DL.5RS and 1BL.1RS, has been crossed to the subline of wheat cultivar ‘Amadeus 7143’ with a 1BL.1RS translocation. The resulting F1 hybrid IJ 98 with a heterozygous 5DL.5DS-5DL.5RS chromosome pair has been used to produce doubled haploids. A total of 57 DH lines were obtained from plantlets regenerated in anther culture after successful colchicine treatment and seed set. These lines were identified regarding the constitution of chromosome 5D (5DL.5DS or 5DL.5RS) by means of isoenzyme marker analysis. Thirty DH lines possessed the 5DL.5DS chromosome, while the remaining 27 lines carried the 5DL.5RS translocation. For some of these lines, the 5DL.5RS chromosome was cytologically confirmed by C-banding. Furthermore, the DH lines were evaluated for their high molecular weight glutenin subunit composition. All possible combinations for the four independent loci —Skdh, Glu-Al, Glu-B1 and Glu-D1— were detected in only 57 DH lines and no segregation distortion was observed.
    Type of Medium: Electronic Resource
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