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  • American Institute of Physics  (123)
  • American Institute of Physics (AIP)  (44)
  • National Academy of Sciences  (38)
  • 2000-2004  (205)
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  • 1
  • 2
    Publication Date: 2004-12-01
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2824-2830 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaAs strained epitaxial layers on GaAs are of considerable interest in semiconductor devices. An important feature is the critical thickness of the epitaxial layer beyond which relaxation occurs, affecting the device performance. With this in view, a series of such structures have been grown by organometallic vapor phase epitaxy and characterized by ion channeling, high resolution x-ray diffraction and Raman spectroscopy. The results of these three techniques are compared for the samples in this study which are fully strained, nominally and by experimental measurements. Beam steering effect that occurs at low energy channeling is also addressed. © 2001 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1931-1933 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A compound Nd5Co21B4 belonging to the series Rm+nCo5m+3nB2n with m=3, n=2 has been synthesized by melt spinning. The crystal structure and magnetic properties of the compound have been studied by means of x-ray diffraction and magnetic measurements. The compound crystallizes in a hexagonal structure with space group P6/mmm. The Curie temperature, the saturation moment, and the planar anisotropy field of the compound are 570 K, 31.1 μB/f.u., and 861 kOe, respectively. © 2001 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4380-4383 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report crystalline, magnetic, and magneto-optic (MO) properties of Ce-substituted yttrium iron garnet (CexY3−xFe5O12) thin films epitaxially grown onto single crystal Gd3Ga5O12 (111) substrates using Nd:YAG pulsed laser deposition technique. Oxygen ambient pressure used for the growth is found to be the critical parameter to prepare CexY3−xFe5O12 films with good crystalline and magnetic properties as well as large MO effect. The film fabricated at 50 m Torr oxygen pressure exhibits a maximum Faraday rotation (FR) θF=1.78 and 4°/μm at λ=633 and 430 nm, respectively, a minimum in-plane coercivity Hc=35 Oe, and the narrowest full width at half maximum = 0.06° for the (444) x-ray Bragg reflection rocking curve. The analog of the Verdet constant V=θF/4πMs also found to be dependent on the oxygen ambient pressure reaches a value as high as 1.41°/μm kG at 633 nm, suggesting that this material is useful for MO applications. The energy dispersion FR spectra, measured over visible region 400 to 840 nm, clearly demonstrate that Ce substitution prominently enhances Faraday effect at 690 and at 430 nm blue-wavelength region. © 2001 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4921-4926 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the temporal duration of 45 MeV picosecond electron beam bunches using a noninvasive electro-optical (EO) technique. The amplitude of the EO modulation was found to increase linearly with electron beam charge and decrease inversely with distance from the electron beam. The rise time of the temporal signal was limited by our detection system to ∼70 ps. The EO signal due to ionization caused by the electrons traversing the EO crystal was also observed. It has a distinctively long decay time constant and signal polarity opposite to that due to the field induced by the electron beam. The electro-optical technique may be ideal for the measurement of bunch length of femtosecond, relativistic, high energy, charged, particle beams. © 2001 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3756-3758 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of La1/2Na1/2TiO3 fabricated by pulsed laser deposition show interesting dielectric properties exhibiting quantum paraelectric-type temperature-insensitive dielectric constant below 50 K. The dielectric constant (εr∼180) is also very stable under electric bias up to 4×104 V/cm. These properties indicate that these films coupled with high temperature superconductors have a great potential for microwave applications. © 2000 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5630-5634 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multiple-energy box profile elevated-temperature (700 °C) phosphorus ion implantations were performed into 4H–SiC in the doping range of 1×1017–1×1020 cm−3. The implanted material was annealed at 1500, 1600, or 1650 °C with an AIN encapsulant to prevent degradation of the SiC surface. Within this temperature range the sheet resistance does not change significantly for a given dose. The percentage of electrical activation of the P donors initially decreased with increasing implant dose for P-implant concentration up to 3×1019 cm−3 and then increased again at higher doses. For 1×1020 cm−3 P implant, a carrier concentration of 4×1019 cm−3 was measured at room temperature. In the 1017 cm−3 P doping concentration range substitutional activation greater than 85% was measured. Despite performing the implants at 700 °C, a significant amount of as-implanted damage was observed in the Rutherford backscattering (RBS) spectrum, even for 1018 cm−3 range P implantations. The RBS yield after annealing is near the virgin level for P concentrations up to 1×1019 cm−3, but above this concentration the RBS yield is above the virgin level, indicating a significant amount of residual lattice damage in the crystal. © 2000 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 690-696 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The propagation of electrostatic surface modes on a thin dusty plasma slab has been investigated in different dust fugacity regimes. For wave frequencies much smaller than the grain charging frequency and for long wavelengths, it is shown that dusty plasmas support three different types of surface modes, namely, the dust–acoustic surface wave (DASW), the dust charge–density surface wave (DCDSW) and the dust–Coulomb surface wave (DCSW) which exist, respectively, in the low fugacity (tenuous), medium fugacity (dilute) and high fugacity (dense) regimes. In the short wavelength range, there exists a new kind of surface mode called "dusty plasma surface wave" (DPSW) which has no counterparts in the volume modes. This new mode exists over a wide range of dusty fugacity (from tenuous to dense regime). On the other hand, for frequencies much larger than the grain charging frequency, the DASWs exist also in the dilute regime, while the DCSWs are found to be absent. In the short wavelength limit, the DPSWs continue to exist even in the high-frequency range. Explicit dispersion relations as well as the damping rates due to the grain charge fluctuations are derived in each case. The results obtained for the various surface modes are compared with those for the case of volume modes. © 2001 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 370-373 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonlinear propagation of small, but finite, amplitude electrostatic dust waves has been investigated in the low as well as high fugacity regimes by deriving the corresponding Boussinesq equation which, for unidirectional propagation, reduces to the Korteweg–de Vries equation. The dust-acoustic wave (DAW) solitons are shown to correspond to the tenuous (low fugacity) dusty plasmas, while in the dense (high fugacity) regime the solitons are associated with the dust-Coulomb waves (DCWs). Unlike the DAW solitons which are (dust) density compressional and supersonic, the DCW solitons are (dust) density rarefactive and propagate with super-Coulombic speeds. © 2001 American Institute of Physics.
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