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  • Oxford University Press  (212)
  • American Geophysical Union  (142)
  • American Institute of Physics (AIP)  (137)
  • 2000-2004  (491)
  • 1
    Electronic Resource
    Electronic Resource
    Use of a four detector photopolarimeter for Kerr effect measurements (2002)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 1255-1258 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new type of Kerr effect polarimeter, making use of four detectors, is described. The light is reflected at oblique incidence off each detector in turn, in such a way that the plane of incidence changes on each reflection. Since the reflections are polarization dependent, each detector signal depends on the Kerr rotation and, since the detector outputs can be normalized, this rotation may be obtained without the need of either a particularly stable laser source nor any type of modulation. The method thus provides a cheap alternative to more traditional Kerr techniques. We demonstrate its use in obtaining hysteresis loops for a thin film sample of CoO deposited on Co. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1448899
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  • 2
    Electronic Resource
    Electronic Resource
    Thermoelectric efficiency in graded indium-doped PbTe crystals (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1425-1430 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High efficiency thermoelectric conversion is achieved by using materials with a maximum figure of merit Z=S2σ/k, where S is the Seebeck coefficient, σ and k, the electrical and thermal conductivities, respectively. High quality homogeneous thermoelectric materials, based on PbTe crystals, usually display an elevated value of Z over a narrow temperature range. A maximal value of figure of merit Z, as a function of electron density, is attained only for one specific location of the Fermi level, EF, with respect to the conduction band edge, EC. In order to maintain this optimal Z value, namely, maintain a constant location of the Fermi level, the electron density, which is determined by the dopant concentration, must increase with increasing temperature. We present a method for the generation of a dopant (indium) concentration profile in n-type PbTe crystals that gives rise to a constant location of the Fermi level, and hence, to an optimal value of Z over a wide temperature range. The resulting functionally graded material, based on PbTe〈In〉, displays a practically constant value of the Seebeck coefficient, over the 50–600 °C temperature range. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1490152
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  • 3
    Electronic Resource
    Electronic Resource
    Polarization-resolved linewidth-power product of a vertical-cavity semiconductor laser (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4183-4185 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the linewidth around threshold of the lasing and nonlasing polarization mode (x and y) in a TEM00 oxide-confined vertical-cavity semiconductor laser (VCSEL). We experimentally demonstrate: (i) that the nonlasing mode shows surprising behavior when the lasing mode passes through threshold, and (ii) that the polarization fluctuations in a VCSEL are limited by the same quantum noise that sets its finite Schawlow–Townes linewidth. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1352673
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  • 4
    Electronic Resource
    Electronic Resource
    Ion beam driven ion-cyclotron waves in a plasma cylinder with negative ions (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 679-686 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An ion beam propagating through a magnetized plasma cylinder containing K+ positive ions, electrons and SF6− negative ions drives electrostatic ion-cyclotron (EIC) waves to instability via Cerenkov interaction. Two EIC wave modes are present, the SF6− and K+ modes. The frequencies and the growth rate of both the unstable negative ion and the positive ion modes increase, with increasing ε (=nSF6−/nK+), the relative density of negative ions. The frequencies of both the unstable modes (SF6− and K+) increase, with the magnetic field. The growth rate of both the unstable modes (SF6− and K+) scales as the one-third power of the beam density. The real frequency of both the unstable modes increases as almost the square root of the beam energy. Numerical calculations of the growth rate and modes frequencies have been carried out for the parameters of the experiment of Song et al. [Phys. Fluids B 1, 2316 (1989)] and the results are in good agreement with the experimental observations. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1336533
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  • 5
    Electronic Resource
    Electronic Resource
    Resistive axisymmetric equilibria with arbitrary flow (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 3097-3100 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analysis of axisymmetric equilibria with arbitrary incompressible flow and finite resistivity is presented. It is shown that with large aspect ratio approximation or vanishing poloidal current, a uniform conductivity profile is consistent with equilibrium flows. Also a comment is made on coexistence of both toroidal and poloidal flows in an axisymmetric field-reversed configuration. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.874165
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  • 6
    Electronic Resource
    Electronic Resource
    Electron-drift driven ion-acoustic mode in a dusty plasma with collisional effects (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 2335-2339 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Instabilities of ion-acoustic waves in a dusty plasma with electron-drift, collisional, and dust charge fluctuations effects, have been investigated. The regimes are clearly marked out where the theory is applicable. The critical electron-drift velocity required to drive the instability is predicted. It is also shown that electron thermal conductivity and charged grains concentration enhance the growth of the ion-acoustic mode, whereas ion viscosity, ion-thermal conductivity, and dust charge fluctuations have a stabilizing effect. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.874069
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  • 7
    Electronic Resource
    Electronic Resource
    Three dimensional arrays of cobalt nanocrystals: Fabrication and magnetic properties (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1502-1508 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cobalt nanocrystal three dimensional (3D) arrays were fabricated by deposition of a ferrofluid on a highly oriented pyrolitic graphite substrate and by applying a magnetic field parallel to the substrate during the deposition process. Depending on the strength of the magnetic field, regular stripes of cobalt nanocrystals are obtained. The influence of the deposition process parameters was investigated. The magnetic properties of these 3D arrays are discussed in terms of orientation of the easy axes and ferromagnetic domain formation. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1427397
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  • 8
    Electronic Resource
    Electronic Resource
    Low temperature photoluminescence of Ga0.84In0.16As0.22Sb0.78 solid solutions lattice matched to InAs (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2813-2817 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence (PL) study of liquid phase epitaxy grown undoped and Sn doped GaIn0.16As0.22Sb layers lattice matched to InAs is reported. The quaternary solid solutions Ga1−xInxAsySb1−y are promising materials for the fabrication of optoelectronics devices operating in the spectral range 3–5 μm because these alloys can form type II heterojunctions both with staggered and broken-gap alignment. The band structure engineering of these devices requires the knowledge of energy gaps and mechanism of radiative recombination transitions in the forbidden gap of cladding layers. The high quality quaternary GaIn0.16As0.22Sb epitaxial layers with low native defect concentration were grown lattice matched to InAs and their photoluminescence was studied at low temperatures. The emission band related to bound exciton was dominant. While the emission bands associated with the first ionization state of VGaGaSb vacancy-antisite defect with activation energy ΔEA=22 meV and unknown deep defect with ΔEB=46 meV were found besides the main PL peak ΔEBE=16 meV. It was established that Sn as an amphoteric impurity can form shallow donor levels. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1388570
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  • 9
    Electronic Resource
    Electronic Resource
    Influence of a partially oxidized calcium cathode on the performance of polymeric light emitting diodes (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1376-1382 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the influence of the presence of oxygen during the deposition of the calcium cathode on the structure and on the performance of polymeric light emitting diodes (pLEDs). The oxygen background pressure during deposition of the calcium cathode of polymeric LEDs was varied. Subsequently, the oxygen depth distribution was measured and correlated with the performance of the pLEDs. The devices have been fabricated in a recently built ultraclean setup. The polymer layers of the pLEDs have been spincoated in a dry nitrogen atmosphere and transported directly into an ultrahigh vacuum chamber where the metal electrodes have been deposited by evaporation. We used indium–tin–oxide as anode, OC1C10 PPV as electroluminescent polymer, calcium as cathode, and aluminum as protecting layer. We achieved reproducibility of about 15% in current and brightness for devices fabricated in an oxygen atmosphere of (very-much-less-than)10−9 mbar. For further investigations the calcium deposition was carried out in an oxygen atmosphere from 10−8 to 10−5 mbar. We determined the amount of oxygen in the different layers of the current–voltage-light characterized pLEDs with elastic recoil detection analysis and correlated it with the characteristics of the devices. The external efficiency of the pLEDs decreases continuously with increasing oxygen pressure, the current shows a pronounced minimum. The brightness mostly decreases with increasing oxygen with an indication of a slight minimum. PLEDs with completely oxidized calcium are not operational. The first contact of the pLEDs with the dry glove box environment leads to an immediate reduction of current and brightness which is caused by the cooling of the devices by several degrees. Determining reproducible characteristics of pLEDs in the vacuum requires the measurement of their temperature. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1383577
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  • 10
    Electronic Resource
    Electronic Resource
    Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1660-1662 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Good-optical-quality C delta-doped AlGaAs layers grown by metalorganic vapor phase epitaxy using CBr4 with the impurities confined over not more than 5 Å and with doping levels above 1×1012 cm−2 are obtained. Such layers are found to be adequate for use in the fabrication of nipi superlattices for amplitude modulation. Yet, little flexibility is found in the growth conditions, in particular for the V to III fluxes ratio, for obtaining such layers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1382826
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