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  • Springer  (167)
  • American Institute of Physics (AIP)  (50)
  • American Chemical Society (ACS)
  • 2000-2004  (217)
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  • 1
    Electronic Resource
    Electronic Resource
    Neutralizing antibody provided protection against enterovirus type 71 lethal challenge in neonatal mice (2000)
    Springer
    Journal of biomedical science 7 (2000), S. 523-528 
    Details
    ISSN: 1423-0127
    Keywords: Enterovirus type 71 ; Experimental infection ; Mice ; Neutralizing antibody ; Vaccine
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract Experimental infection with enterovirus type 71 (EV71) induced death in neonatal mice in an age- and dose-dependent manner. The mortality rate was 100% following intraperitoneal inoculation 1-day-old ICR mice and this gradually decreased as the age at the time of inoculation increased (60% in 3-day-old mice and no deaths occurred in mice older than 6 days of age). A lethal dose greater than 108 PFU was necessary. Lethargy, failure to gain weight, rear limb tremors and paralysis were observed in the infected mice before death. EV71 was isolated from various tissues of the dead mice. Using a reverse transcription polymerase chain reaction technique with a specific primer pair, a 332-bp product was detected in the tissues that produced a culture positive for EV71. Protection against EV71 challenge in neonatal mice was demonstrated following passive transfer of serum from actively immunized adult mice 1 day after inoculation with the virus. Pups from hyperimmune dams were resistant to EV71 challenge. Additionally, maternal immunization with a formalin-inactivated whole-virus vaccine prolonged the survival of pups after EV71 lethal challenge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02253368
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  • 2
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    Identification and expression of zebrafish Iroquois homeobox gene irx1 (2001)
    Springer
    Details
    Publication Date: 2001-09-01
    Print ISSN: 0949-944X
    Electronic ISSN: 1432-041X
    Topics: Biology
    Published by Springer
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    PAPER CURRENT
  • 3
    Electronic Resource
    Electronic Resource
    Study of argon characteristics in ion physical vapor deposition using molecular dynamics simulation (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3569-3578 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article uses molecular dynamics simulation to investigate the role of Ar ions in the ion physical vapor deposition (IPVD) process for different Ar+-to-Cu+ ratios, and to analyze the influence of different Ar+-to-Cu+ ratios on the trench filling morphology. Also compared are the trench filling morphology observed for the IPVD process with that found in the conventional collimated magnetron deposition process. The molecular dynamics simulation includes a trench model and a deposition model, and uses the many-body, tight-binding potential method to represent the interatomic force acting among neutral atoms. The interatomic force acting between the ions and the neutral atoms is modeled by the pairwise Moliere potential method. The simulation indicates that the incident Ar ions influence the trench filling mechanisms in two significant ways; peeling of the cluster atoms, which promotes migration of the cluster atoms along the sidewall, and breaking of the bridge which forms when two clusters of atoms join. Both phenomena are beneficial since they promote a more complete filling of the trench. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1450032
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  • 4
    Electronic Resource
    Electronic Resource
    Enhanced thermally induced stress effect on an ultrathin gate oxide (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5423-5428 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of thermal stress on the electrical characteristics of metal–oxide–semiconductor diodes with oxides in an ultrathin regime were studied. By centering a quartz ring as a heat sink beneath the silicon wafer, the introduced temperature gradient results in a corresponding hat-like shape thickness distribution for an oxide grown on the wafer with a rapid thermal processing system. The enhanced exterior tensile and compressive thermal stresses due to introduced temperature gradient make the oxides exhibit less and more substrate injection saturation current Jsat, respectively, in comparison to control oxides. Their flatband voltage VFB data also clearly show the dependency of effective charge number density Neff on exterior thermal stress. A stress distribution model is proposed to explain the observation. Co-60 irradiation was also performed on the stressed samples to observe this stress extent by examining the variation of electrical characteristics. It was found that an oxide grown on a wafer in exterior compression exhibited better radiation hardness than one in tension. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1452763
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of yttrium codoping on photoluminescence of erbium-doped TiO2 films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5564-5569 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Er3+–Y3+ codoped TiO2 films were prepared on a fused silica substrate by the sol–gel process. The effect of Y3+ codoping on the ∼1.54 μm photoluminescence (PL) properties of Er3+-doped TiO2 films are investigated. Enhancement of PL properties due to Y3+ codoping by a factor of 10 for intensity and of 1.5 for the full width at half maximum in comparison with the Er3+–Al3+ codoped SiO2 system has been observed in the film annealed at Er3+:Y3+:Ti4+=5:30(∼50):100. Extended x-ray absorption fine structure measurements show that the local chemical environment of Er3+ ions in the Er3+–Y3+ codoped TiO2 films is similar to that in Er2O3. The average spatial distance between Er3+ ions is enlarged due to the partial substitution of Y3+ for Er3+ ions in the Er2O3-like local structure. It is believed that the more intense PL emission of the Er3+–Y3+ codoped TiO2 films can be attributed to the better dispersion and distorted local structure of Er3+ ions in the TiO2 host matrix by yttrium codoping. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1413490
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of In and Ga interdiffusion on the optical gain of InGaN/GaN quantum well (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5180-5182 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, we analyze the effects of thermal annealing by calculating the optical gain in the InGaN/GaN quantum well. The interdiffusion of Ga and In atoms across the interface of the well and the barrier resulting from thermal treatments is described by Fick's law. The strong piezoelectric effect due to lattice mismatch in the InGaN/GaN quantum well is also considered in the calculation. The results confirm that the thermal annealing can induce an increase of the optical gain. However, an excessive annealing might result in decreasing the optical gain in the InGaN/GaN quantum well. The maximum optical gain can be obtained at a diffusion length of 4Å of In and Ga atoms. There is a good agreement between the experimental data in literature and the optimized diffusion length studied in this work. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1412835
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  • 7
    Electronic Resource
    Electronic Resource
    Structural evolution and optical properties of TiO2 thin films prepared by thermal oxidation of sputtered Ti films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4628-4633 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A dense rutile TiO2 thin film was synthesized by the thermal oxidation of a sputtered titanium metal film in ambient air. The effects on optical properties of TiO2 films of the crystal structure and microstructural evolution at various oxidation temperatures were investigated. The Ti films transformed into single-phase rutile TiO2 at temperatures ≥ 550 °C without going through an anatase-to-rutile transformation. Instead, an additional crystalline Ti2O phase was detected at 550 °C only. An increase in the oxidation temperatures ranging between 700 and 900 °C led to an increase in both the refractive index and absorption coefficient, but a decrease in the band gap energy (Eg). According to the coherent potential approximation model, the band gap evolution of the oxidized films was primarily attributed to the electronic disorder due to oxygen deficiency at a higher oxidation temperature rather than the presence of an amorphous component in the prepared films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1309039
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  • 8
    Electronic Resource
    Electronic Resource
    Hypersonic and dielectric properties of (PbZn1/3Nb2/3O3)0.915–(PbTiO3)0.085 single crystal (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2327-2330 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Both the longitudinal Brillouin backscattering spectra and dielectric permittivities along the [001] direction have been measured as a function of temperature for a relaxor ferroelectric single crystal (PbZn1/3Nb2/3O3)0.915–(PbTiO3)0.085 (PZN–8.5%PT). A sharp ferroelectric phase transition (which is associated with a Landau–Khalatnikov-type phonon damping maximum) was observed near 450 K. As temperature deceases, a diffuse phase transition (which is associated with a broad acoustic phonon damping maximum) was detected near 355 K. This broad damping evolution is attributed to dynamic order-parameter fluctuations. In addition, the nature of the thermal hysteresis for the dielectric permittivity confirms that these transitions (near 355 and 450 K) are diffuse first order and first order, respectively. The frequency-dependent dielectric data εc″(f,T) prove the existence of an electric dipolar relaxation process below 360 K. The activation energy, the Vogel–Fulcher temperature, and attempt frequency corresponding to this relaxation process are also calculated. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372182
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  • 9
    Electronic Resource
    Electronic Resource
    Splashing impact of a single drop onto very thin liquid films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 12 (2000), S. 2155-2158 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Liquid films with thicknesses on the order of 1 mm were commonly used for the study of drop impingement onto a wetted surface. This is because films thinner than 1 mm are difficult to generate and measure due to capillary meniscus. In this work a novel method to produce thin films of well-defined thickness has been developed. Also a reliable process with minimum uncertainty to determine film thickness was proposed. New splashing phenomena were observed for drop impact onto thin films. It is found that the critical splash level (the threshold Weber number) is insensitive to film thickness for a given solid surface if the film is sufficiently thin. It is also shown that the critical splash level increases with liquid viscosity. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287511
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  • 10
    Electronic Resource
    Electronic Resource
    Instantaneous spherical electron focusing in a Penning trap (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 3912-3916 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the electron beam Penning trap, electron focusing at the trap center by means of injecting low-canonical-angular-momentum electrons has been identified. It is found that the focusing occurs instantaneously under the condition that the injection current is larger than a threshold and the effective electric potential well is spherical. A self-consistent model is proposed to describe the setup process of the dense core. According to the model the instantaneous core density is evaluated to be about one order greater than the corresponding Brillouin density. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1288908
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