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  • Springer  (298)
  • American Chemical Society  (32)
  • American Institute of Physics (AIP)  (17)
  • American Association for the Advancement of Science (AAAS)  (2)
  • 2000-2004  (349)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Ways of improving working life for immersed centrifugal pumps (2000)
    Springer
    Chemical and petroleum engineering 36 (2000), S. 152-156 
    Details
    ISSN: 1573-8329
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02463413
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  • 2
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    Ways of improving working life for immersed centrifugal pumps (2000)
    Springer
    Details
    Publication Date: 2000-03-01
    Print ISSN: 0009-2355
    Electronic ISSN: 1573-8329
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Published by Springer
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    PAPER CURRENT
  • 3
    Electronic Resource
    Electronic Resource
    Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5203-5207 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multi-quantum-well GaN/InGaN heterojunction diodes prepared by metalorganic chemical vapor deposition on sapphire showed effects of strong tunneling in their I–V characteristics. The space charge region was shown to be located in the GaN/InGaN superlattice (SL). The injection of moderately high forward currents through the structure for several hours enhanced the overall tunneling through the structure and facilitated faster tunneling between the layers in the GaN/InGaN SL. These results may have relevance to the aging characteristics of light-emitting diodes under bias. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1465119
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  • 4
    Electronic Resource
    Electronic Resource
    Relaxation to a bistable state in a quantum cell (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4525-4530 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We analyze a simple model of a quantum cell composed of two Coulomb-coupled double dot systems with one electron in each double dot. The interaction of electrons with acoustic phonons is considered as the principal mechanism that relaxes the cell to the ground state. Non-Markovian stochastic equations for population differences and dipole moments of the constituent double dots are derived. It is found that in order for the bistable state of the quantum cell to exist, the effective energy of Coulomb repulsion between the double dot systems must exceed the individual tunnel splitting energy, as well as the phonon temperature. The behavior of the cell polarization near the critical temperature is described analytically. We calculate the damping rates determining cell relaxation to its minimum-energy state and discuss limitations on the speed of cell response to external fields caused by the finite relaxation time. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373099
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  • 5
    Electronic Resource
    Electronic Resource
    Electronic states in modulation doped p-AlGaN/GaN superlattices (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4032-4038 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of p-AlGaN/GaN modulation doped superlattices (SLs) prepared by molecular beam epitaxy were studied by means of conductivity versus temperature, admittance spectroscopy, photoinduced current spectroscopy, microcathodoluminescence (MCL) spectra measurements, and measurements of effective diffusion lengths. It is shown that in SLs grown on GaN underlayers the sheet resistivity is about two orders of magnitude lower than for reference p-GaN films and the resistivity of SLs remains lower up to temperatures of about 350 °C. For SLs grown on AlGaN underlayers the gain in resistivity is much more moderate and certain advantages in using such SLs are envisaged only for temperatures below room temperature. The reason for this lower gain is a considerable decrease in hole mobility compared to p-GaN. The effect is somewhat tentatively attributed to worse crystalline perfection of these SLs. It is also shown that such SLs are characterized by a strongly broadened MCL peak and the presence of additional hole traps with activation energy of about 0.4 eV. Despite that, the photosensitivity and MCL intensity of these SLs are much better than for reference p-GaN samples. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405819
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  • 6
    Electronic Resource
    Electronic Resource
    Real time quantification of Monte Carlo steps for different time scales (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4798-4800 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time quantification of Monte Carlo steps is studied by the implementation of a new technique which takes into account the realistic size of thermal fluctuations of magnetization along with Landau–Lifshitz–Gilbert dynamic correlations. The computational model has been specifically developed for an ensemble of isolated single-domain particles. The numerical results have been compared with Langevin dynamics calculations and theoretically predicted Brown's asymptotes for relaxation time of single spin system. In addition we demonstrated that real time quantification of Monte Carlo steps is also possible for different time scales. Implementation of real time scales into Monte Carlo calculations for different sizes of time steps is shown to be convergent to the expected value if the Monte Carlo acceptance rate is taken into account. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373163
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  • 7
    Electronic Resource
    Electronic Resource
    Formation of multi-charged ions and plasma stability at quasigasdynamic plasma confinement in a mirror magnetic trap : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 669-671 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: It is known that an increase in plasma density in sources of multicharged ions leads to a substantial increase of ion current and slightly improves the ion distribution over charge states. The validity of this statement was verified in experiments with plasma densities not exceeding several units of 1012 cm−3. In the present work it is demonstrated experimentally that, for the electron densities exceeding 1013 cm−3, the regime of plasma confinement in a trap changes significantly and the quasigasdynamic regime of plasma confinement is realized. Comparison of numerical simulations and experimental data showed the essential influence of the anisotropy of electron velocity distribution in a plasma on the ion charge state distribution. This allows looking for the optimal conditions for the creation of highly charged ions in plasma. In this article we also address problems of plasma stability in an axisymmetric mirror trap under powerful microwave pumping. First experiments on ion extraction from a dense plasma pumped by millimeter wave radiation are described. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150255
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  • 8
    Electronic Resource
    Electronic Resource
    Plasma method for separation of heat-resistant metals (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3279-3282 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The regime of burning of a high-pressure arc is considered when its positive column contains an admixture of a heat-resistant metal, which is located in the form of a gaseous compound near walls of the discharge tube and metallic clusters in a hot region of this discharge. Criteria of this discharge regime are given. A cluster instability leads to the growth of metallic clusters in an intermediate region of the discharge. This instability is a basis for separation of a heat-resistant metal in the plasma from its chemical compounds. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372336
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  • 9
    Electronic Resource
    Electronic Resource
    Group invariant classification of separable Hamiltonian systems in the Euclidean plane and the O(4)-symmetric Yang–Mills theories of Yatsun (2002)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 43 (2002), S. 1422-1440 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: We present a new and effective method of determining separable coordinate systems for natural Hamiltonians with two degrees of freedom in flat Riemannian space. The method is based on intrinsic properties of the associated Killing tensors and their invariants under the group of rigid motions E(2). Applications to the Hamiltonian systems derived by the late V. A. Yatsun from O(4)-symmetric Yang–Mills theories are presented. In addition, an equivalence between separability of two-dimensional Hamiltonian systems and the existence of Pfaffian quasi-bi-Hamiltonian representations is specified. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1445501
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  • 10
    Electronic Resource
    Electronic Resource
    A class of Liouville-integrable Hamiltonian systems with two degrees of freedom (2000)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 41 (2000), S. 6879-6889 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: A class of two-dimensional Liouville-integrable Hamiltonian systems is studied. Separability of the corresponding Hamilton–Jacobi equation for these systems is shown to be equivalent to other fundamental properties of Hamiltonian systems, such as the existence of the Lax and bi-Hamiltonian representations of certain fixed types. Applications to physical models, including the Calogero–Moser model, an integrable case of the Hénon-Heiles potential and the nonperiodic Toda lattice are presented. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1288799
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