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  • American Institute of Physics (AIP)  (17)
  • PANGAEA  (3)
  • 2000-2004  (20)
  • 1955-1959
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  • 11
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 41 (2000), S. 6879-6889 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: A class of two-dimensional Liouville-integrable Hamiltonian systems is studied. Separability of the corresponding Hamilton–Jacobi equation for these systems is shown to be equivalent to other fundamental properties of Hamiltonian systems, such as the existence of the Lax and bi-Hamiltonian representations of certain fixed types. Applications to physical models, including the Calogero–Moser model, an integrable case of the Hénon-Heiles potential and the nonperiodic Toda lattice are presented. © 2000 American Institute of Physics.
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  • 12
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3352-3354 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions (HJ) prepared by hydride vapor phase epitaxy (HVPE) on 4H SiC substrates are reported. It is shown that the GaN/p-SiC HJ is staggered type II with the conduction bandoffset and the valence bandoffset values, respectively, ΔEc=−0.49 eV and ΔEv=0.65 eV. When changing GaN for AlGaN with Al mole fraction of x=0.25–0.3 the band alignment becomes normal type I with ΔEc=0.2 eV and ΔEv=0.6 eV. Current–voltage characteristics of both heterojunctions bear evidence of strong tunneling via defect states. The tunneling was found to be more pronounced in the AlGaN/SiC HJs even though these showed no evidence of formation of dark line defects at the interface, in contrast to GaN/SiC. © 2002 American Institute of Physics.
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  • 13
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 705-707 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We experimentally demonstrate a supercurrent-assisted, hotspot-formation mechanism for ultrafast detection and counting of visible and infrared photons. A photon-induced hotspot leads to a temporary formation of a resistive barrier across the superconducting sensor strip and results in an easily measurable voltage pulse. Subsequent hotspot healing in ∼30 ps time frame, restores the superconductivity (zero-voltage state), and the detector is ready to register another photon. Our device consists of an ultrathin, very narrow NbN strip, maintained at 4.2 K and current-biased close to the critical current. It exhibits an experimentally measured quantum efficiency of ∼20% for 0.81 μm wavelength photons and negligible dark counts. © 2001 American Institute of Physics.
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  • 14
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1834-1836 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen diffusion studies were performed in GaN samples with different Fermi level positions. It is shown that, at 350 °C, hydrogen diffusion is quite fast in heavily Mg doped p-type material with the Fermi level close to Ev+0.15 eV, considerably slower in high-resistivity p-GaN(Zn) with the Fermi level Ev+0.9 eV, while for conducting and semi-insulating n-GaN samples with the Fermi level in the upper half of the band gap no measurable hydrogen diffusion could be detected. For these latter samples it is shown that higher diffusion temperature of 500 °C and longer times (50 h) are necessary to incorporate hydrogen to appreciable depth. These findings are in line with previously published theoretical predictions of the dependence of hydrogen interstitials formation in GaN on the Fermi level position. © 2001 American Institute of Physics.
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  • 15
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2578-2580 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have examined the effects of inelastic phonon scattering on the lead-to-lead current through a parallel-quantum-double-dot device to determine the persistence of coherence within the device. The tunnel-coupled double-dot system is taken to be symmetric and is threaded by Aharonov–Bohm magnetic flux. We show that at resonant values of the magnetic flux, when only the bonding or antibonding state is involved in transport through the double dot, the current–voltage characteristic changes drastically and the electron–phonon interaction has a pronounced effect on the level populations. However, it does not destroy coherence during the tunneling process through the system. © 2000 American Institute of Physics.
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  • 16
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4372-4374 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical and optical properties of modulation-doped p-AlGaN/GaN superlattices are compared to those of similarly doped p-GaN films. It is shown that modulation doping increases the sheet hole concentration by several times. In p-AlGaN/GaN superlattices grown on GaN underlayers, this increase is accompanied by a significant increase in hole mobility which results in a remarkable decrease in sheet resistivity of the structure compared to p-GaN films and this decrease in sheet resistivity should hold up to temperatures exceeding 350 °C. For superlattices prepared on AlGaN underlayers, the mobility decreases compared to p-GaN. In such superlattices, one also observes a strong redshift and a strong broadening of the band edge luminescence peak coming most probably from increased mosaicity and strain which would also explain the observed deterioration of mobility. The magnitude of the redshift in the position of the band edge luminescence band slightly increased upon application of reverse bias which is interpreted as a manifestation of quantum-confined Stark effect. © 2001 American Institute of Physics.
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  • 17
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 1649-1656 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A special two-period insertion device is considered in terms of useful properties of spontaneous emission. General idea of the geometry can be interpreted as helical transformation applied to an original linear undulator structure to provide superimposed fast and slow transverse oscillations of the electron beam. Periodic sextupolar focusing effect of the device is calculated analytically. Three-dimensional hybrid magnetic design is treated numerically on the base of traditional and specially modified feasible structures. Main properties of the spontaneous emission of single electron were studied using a derived analytical form and numerical computations. The following features of the radiation are outlined: (i) reduction of relative content of higher odd harmonics as the "slow" imposed helical field increases; (ii) radiation enhancement as the number of helical turns increases; (iii) spectral line splitting and intensity adjustment; and (iv) opposite directions of circular polarization for adjacent spectral lines. In particular, unlike most insertion devices this structure does not require any magnetic readjustments or electromagnetic switching to provide opposite polarization. Potential technical advantages in application for single pass superradiant free electron lasers are also discussed. © 2001 American Institute of Physics.
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  • 18
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 635-637 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: One of the major trends in the development of ECR sources of multicharged ions is an increase of the extracted ion current. The main factor affecting the current of an ion beam produced by such a source is, obviously, the density of the plasma from which ions are extracted. In the present article the mean ion charge, the ion current density, and the minimal microwave power required to sustain needed electron temperature are calculated for a broad range of plasma densities (up to 1014 cm−3, which corresponds to 90 GHz cutoff frequency of microwave pumping). The electron temperature is taken as granted and no effects due to instabilities are considered. The distinguishing future of the analysis performed is that it takes into account alteration of the regime of plasma confinement, which occurs as the plasma density is increased. If the plasma density exceeds a certain threshold, the classical Pastukhov's regime of plasma confinement is replaced by the quasi-gas-dynamic regime. It is demonstrated, in particular, that within the framework of a common approach it's possible to analyze qualitatively conventional ECR sources with pumping frequencies up to 18 GHz as well as experiments where microwave radiation with the frequency of 37.5 GHz was used. © 2002 American Institute of Physics.
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  • 19
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 13 (2001), S. 3820-3823 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The aim of this contribution is to present the results of experiments conducted to elucidate the conditions of formation and evolution of planar dipolar eddies in a stratified fluid in the presence of a vertical background shear. The flow regime diagram is derived and conditions under which the formation of dipolar eddies is possible are found and explained. The estimates for the dipole lifetime are given. Possible applications include oceanic mushroom-like currents, late stratified wakes and other cases when dipolar or quasi-dipolar eddies are observed in a stratified shear flow. © 2001 American Institute of Physics.
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  • 20
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 115 (2001), S. 7650-7656 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The average distances between Gd3+ ions in multicomponent silicate glasses doped with 0.058 to up to 4.64 wt % Gd2O3 are characterized by electron paramagnetic resonance (EPR) line broadening effects at high-field (95 GHz, W band). Increase in the EPR resonant field/frequency above that of the conventional X band (9.5 GHz) simplifies the Gd3+ EPR spectra and increases the sensitivity of the EPR linewidth to concentration induced broadening effects. Least squares line shape simulations show that the broadening can be described by a Lorentzian function with a width proportional to the average Gd3+ concentration which is in good agreement with the existing theories. Analyses of the concentration dependence of Lorentzian line broadening indicate an onset of clustering of Gd3+ ions at 〉 1wt % doping levels. © 2001 American Institute of Physics.
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