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  • 2000-2004  (438)
  • 1970-1974  (60)
  • 1935-1939  (6)
  • 1930-1934  (8)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6135-6138 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work investigates the variations of the infrared transmission spectra of yttrium-hydride films YHx during the hydrogen loading process for the frequency range 500–4000 cm−1. The results indicate that the transmittance slightly decreases in the dihydride phase, followed by a significant increase in the trihydride phase. In addition, the carrier concentration decreases, whereas the carrier relaxation time increases with hydrogen content. The hydrogen vibration modes at interstitial sites are completely screened in the dihydride phase. The screening effect decreases as the system goes through the metal–insulator transition. Moreover, the screening effect can be continuously tuned by simply varying the hydrogen content in the yttrium-hydride system. Analysis indicates that the absorption intensity of the vibration mode depends on the carrier concentration. This effect can be used as a diagnostic tool for estimating the carrier concentration and hydrogen content in rare-earth hydrides. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1999-2004 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A physically based two-dimensional simulation for a polycrystalline CdSe thin-film transistor with multi-energetic trapping states located 0.11, 0.33, and 0.67 eV below the conduction band in the semiconductor and localized at the grain boundaries was presented. It was shown that the experimentally observed gradual transition from the exponential (or subthreshold) to linear (or post-threshold) regime is due to the effect of the trapping–detrapping process at the shallower trapping level of 0.11 eV, whereas the subthreshold slope has a strong dependence on the density distribution of the deeper trap at 0.33 eV, and the traps at 0.67 eV have no experimentally observable effect on the shape of the transfer characteristics of TFTs. Furthermore, each trap energy level only affects the shape of the transfer characteristics in a range of gate voltages when |EF −ET|〈3kT. The fixed oxide charge density at the SiO2/CdSe interface was extracted from C–V measurements on metal-oxide-semiconductor capacitors and shown to be 3×1011/cm2. © 2000 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 12 (2000), S. 54-65 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The two-dimensional problems of scattering and radiation of small-amplitude water waves by thin vertical porous plates in finite water depth are considered using the linear water wave theory. Applying the method of eigenfunction expansion, these boundary value problems are converted to certain dual series relations. Solutions to these relations are then obtained by a suitable application of the least squares method. For the scattering problem, four different basic configurations of the barriers are investigated, namely, (I) a surface-piercing barrier, (II) a bottom-standing barrier, (III) a totally submerged barrier, and (IV) a barrier with a gap. The performance of these types of barriers as a breakwater are examined by studying the variation of their reflection and transmission coefficients, hydrodynamic forces and moments for different values of the porous effect parameter defined by Chwang [J. Fluid Mech. 132, 395–406 (1983)], or the Chwang parameter. For the radiation problem, three types of wavemakers, which resemble types (I), (II), and (III) of the above-mentioned configuration, are analyzed. The dependence of the amplitude to stroke ratio on other parameters is also investigated to study the features of these wavemakers. © 2000 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8793-8795 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature electroluminescence corresponding to Si band gap energy from metal–oxide–semiconductor structures on both p-type and n-type Si is observed. With very thin oxide grown by rapid thermal oxidation, the metal–oxide–semiconductor structures behave like light emitting diodes. Luminescence is observed under forward bias even with a current density as low as 0.67 A/cm2. The physical reason for the electroluminescence is discussed and attributed to the localized wave function that leads to the spread of momentum. As a result, the spread momentum causes the electron–hole radiative recombination to occur relatively easily. © 2000 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7798-7801 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the optical transmittance of thin films of gadolinium trihydride GdH3 over a broad spectral range, 0.05–6 eV. The analysis indicates that GdH3 is a wide-gap semiconductor with an energy gap of 2.55 eV. The fundamental absorption and impurity-related transitions dominate the spectra in the high-energy region, 1–6 eV. Hydrogen vibration modes dominate the spectra in the low-energy region, 0.05–0.2 eV. A strong free-carrier absorption effect is observed. In addition, the frequency-dependent refractive index, extinction coefficient, dielectric function, and optical conductivity are determined from the transmission spectra. This work also evaluates the plasma frequency associated with free carriers. © 2000 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Autonomic & autacoid pharmacology 22 (2002), S. 0 
    ISSN: 1474-8673
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Chemistry and Pharmacology , Medicine
    Notes: 1 This study was aimed at evaluating the effect of rutin and harmaline (1-methyl-7-methoxy-3,4-dihydro-β-carboline) on the development of the surgically induced reflux oesophagitis, on gastric secretion, lipid peroxidation, polymorphonucleocytes (PMNs) accumulation, superoxide and hydroxyl radical production in PMNs, cytokine [interleukin-1β (IL-1β), tumour necrosis factor-α (TNF-α)] production in blood and [Ca2+]i mobilization in PMNs. 2 Rutin and harmaline significantly prevented the development of reflux oesophagitis and gastric secretion. Treatments of oesophagitis rats with rutin and harmaline inhibited lipid peroxidation, and myeloperoxidase (MPO) in the oesophagus in comparison with untreated rats. 3 Superoxide anion and hydrogen peroxide production in 1 μm formylmethionylleucylphenylalanine (fMLP)- or 0.1 μg ml−1N-phorbol 12-myristate 13-acetate (PMA)-activated PMNs was inhibited by rutin and harmaline in a dose-dependent fashion. Rutin and harmaline effectively scavenged the hydroxyl radical and hydrogen peroxide. Treatments of oesophagitis rats with rutin and harmaline inhibited IL-1β production in the oesophagus in comparison with untreated rats, but TNF-α production was not affected by rutin and harmaline. The fMLP-induced elevation of [Ca2+]i was inhibited by rutin. 4 The results of this study suggest that rutin and harmaline may have beneficial protective effects against reflux oesophagitis by the inhibition of gastric acid secretion, oxidative stress, inflammatory cytokine production (i.e. IL-1β), and intracellular calcium mobilization in PMNs in rats.
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of agricultural and food chemistry 22 (1974), S. 765-770 
    ISSN: 1520-5118
    Source: ACS Legacy Archives
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 36 (1971), S. 861-862 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 37 (1972), S. 1984-1989 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 35 (1970), S. 2077-2078 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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