ISSN:
1432-0630
Keywords:
PACS: 81.15.Fg; 81.05.Ea; 68.55.Jk
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract. Crystalline, 50–1200 nm thick aluminum nitride (AlN) films were deposited on sapphire by laser ablation of sintered AlN targets. On c-, r-, m-, and a-cut sapphire the AlN films were (00.1), (11.0), (10.0), and (00.1) oriented, respectively. X-ray diffraction goniometry revealed the in-plane orientation of AlN on c-, r-, and m-cut sapphire to be c: AlN[1000]||Al2O3[2100], r:AlN[2010]||Al2O3[1000], and m: AlN[0100]||Al2O3[0001]. TEM showed a smooth surface of AlN(11.0) grown on r-cut sapphire in contrast to a rough surface and columnar structure of AlN(00.1) films on c-cut sapphire. AFM revealed atomically flat films at initial stages of film growth independent of the substrate orientation. Thick AlN films on c-cut sapphire were rough whereas those on r-cut sapphire remained smooth up to 1 μm thickness with a rms-roughness as low as 1 nm.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s003390050035
Permalink
