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  • Nature Publishing Group  (22)
  • American Institute of Physics (AIP)  (20)
  • 2000-2004  (34)
  • 1980-1984  (5)
  • 1930-1934  (3)
  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of a new Brillouin spectroscopic technique evidences the existence of internal stresses in white plasma assisted chemical vapor deposited diamond and allows a first assessment concerning their magnitude. The evaluation of the internal stresses is based on the pressure coefficients related to the longitudinal and transverse elastic constants. © 2000 American Institute of Physics.
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  • 2
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Radiography is a heavily used tool for diagnosing laser-based hydrodynamic experiments. A successful experiment relies on the gathering of data over a time window where the relevant physics occurs and on an accurate analysis of those data. Comparison of this experimental data to theory is often best done by generating simulated images from hydrodynamic calculations, including all necessary and important experimental details. Care must be taken to treat both the experimental and theoretical images identically in the analysis. Frequently, image filtering and enhancement routines are used to obtain interface location and perturbation information from the radiographic image. Previous techniques were found to be too sensitive to global image details. New procedures have been developed which utilize local operators that provide better edge or interface identification without bias. These procedures are benchmarked and validated using static radiographic targets of known configuration that mock up experimental situations of interest. The experiment and the image analysis development are described, including discussion of key contributions to the uncertainty of the results.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6656-6658 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxidation mechanisms of the formation of thin insulating barriers in magnetic tunnel junctions are studied. The barriers are prepared by means of an oxidation technique using a highly dissociated low-energy (30–80 eV) ionized oxygen atom beam. The barrier formation is investigated using two independent in situ techniques, resistance and an optical reflectivity method. The oxidation depth varies from 1.5 to 1.9 nm depending on the initial ion energy in agreement with performed Monte Carlo simulations. Two different oxidation mechanisms (ion embedding and diffusion) are identified. The electrical and magnetotransport properties of the junctions are studied. © 2001 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 1140-1142 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a solid-state Br atom source for surface etching, kinetics, and reaction dynamics studies. Pulsed laser irradiation of crystalline KBr, near the bulk absorption threshold at 6 eV, produces hyperthermal Br atoms in dense plumes. The Br atom density and velocities may be controlled by choice of laser pulse power and photon energy. Single and multiple pulse excitation of KBr produces Br and Br* in controllable quantities and velocities, thus providing an attractive ultrahigh vacuum compatible solid-state radical atom source. The solid-state atom source is in principle extendable to other halogens using other alkali halides and perhaps other materials. © 2002 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 396-398 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-temperature operation of a low-threshold 5.3 μm quantum-cascade distributed feedback laser is presented. The emission spectrum was single mode with more than 20 dB side mode suppression ratio for all investigated temperatures and up to thermal rollover. For 1.5% duty cycle and at 0 °C, the laser emitted 1.15 W of single mode peak power; at 120 °C, a value of 92 mW was seen. For a 3 mm long device, we observed a room-temperature threshold current density of 3.6 kA/cm2. This remarkable performance is mainly due to a 4 quantum-well active region using a double phonon resonance for the lower laser level. © 2001 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1964-1966 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High average power quantum cascade lasers at 9.3 μm using InP top cladding layers and both junction up and junction down mounting are presented. A 3 mm long, junction up mounted device emitted 54 mW average power at 30 °C and 11.5% duty cycle with a threshold current density of 3.72 kA/cm2. A similar, but only 1.5 mm long device with high reflection coating on both facets was mounted junction down and tested at even higher duty cycles. At −27 °C, we achieved continuous wave operation with a threshold current density of 3.3 kA/cm2. © 2001 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1967-1969 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Waveguide loss measurements based on a multisection single-pass technique have been performed for both mid-infrared and far-infrared quantum cascade structures. The far-infrared quantum cascade structures are based on a vertical transition active region emitting at λ(approximate)76 μm, embedded in a double-plasmon waveguide. The measured waveguide loss of 42±20 cm−1 agrees well with the calculated one based on free carrier absorption. © 2001 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2698-2700 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the early stages of annealing in boron implanted silicon. In a grazing incidence diffuse scattering investigation of implantation-induced defects, we have observed narrow diffuse rods of intensity along 〈111〉 directions. These diffuse streaks arise from stacking faults formed during annealing in the 1000 °C range. From the width of the diffuse streak the average size of the stacking fault is 71 nm in diameter. These intensity rods are distinct from the point defect or point defect cluster scattering in the tails of the Bragg peak (Huang scattering). From the q dependence of the scattered intensity in the Huang scattering region we find clear evidence for defect clusters with an average effective size of 4 nm, remarkably independent of the annealing temperature. These observations are discussed in the context of the enhanced diffusion of implanted boron over its bulk value referred to as transient enhanced diffusion. © 2000 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 67-69 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electroluminescence in quantum-cascade structures based on vertical transitions is studied in a strong perpendicular magnetic field in the limit in which the cyclotron energy is larger than the intersubband transition energy. Cyclotron emission and a luminescence intensity enhancement up to a factor of 6 is observed in GaAs/AlGaAs and InGaAs/InAlAs vertical transition-based quantum-cascade structures. © 2002 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2766-2768 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Complete oxidation of the ((square root of)3×(square root of)3)R30° Sn/Pt(111) surface alloy or submonolayer amounts of Sn adatoms on Pt(111) under ultrahigh vacuum conditions, forms a highly ordered, lateral superlattice of SnOx islands on the Pt(111) substrate. The island superstructure exhibits a sharp (5×5) low energy electron diffraction pattern. Scanning tunneling microscopy images show islands arranged in a hexagonal lattice, uniformly distributed over the whole sample. This island array is thermally stable up to 1050 K. The coincidence of the island periodicity with a multiple of the supporting substrate, and the same hexagonal symmetry of islands and substrate, suggests a strong island–substrate interaction. We propose that the island formation results from the breakup of a strained SnOx adlayer. © 2001 American Institute of Physics.
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