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  • 1
    Electronic Resource
    Electronic Resource
    Establishment of cell lines from a tropical grouper, Epinephelus awoara (Temminck & Schlegel), and their susceptibility to grouper irido- and nodaviruses (2003)
    Oxford, UK : Blackwell Science Ltd
    Journal of fish diseases 26 (2003), S. 0 
    Details
    ISSN: 1365-2761
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: Four tropical marine fish cell lines have been established from the eye, fin, heart and swim bladder of grouper, Epinephelus awoara (Temminck & Schlegel). Optimum media and temperature conditions for maximum growth were standardized. The eye and swim bladder cells were mostly epithelial, but the fin and heart cells were mostly fibroblastic. The viability of cells was 95% after 1 year of storage in liquid nitrogen (−196 °C). Besides these four cell lines, previously established grouper brain, kidney and liver cell lines were also used for a viral susceptibility study which showed that all the cell lines were sensitive to grouper iridovirus, whereas only brain, fin and liver cell lines were susceptible to the yellow grouper nervous necrosis virus (a nodavirus). Electron microscopy studies of the grouper irido- and nodaviruses in ultrathin sections of infected cells showed an abundance of viral particles in the cytoplasm of the virus-infected cells indicating the effective replication of these two viruses. It is suggested that these cell lines can be used for the isolation of putative fish specific viruses and provide a valuable tool to study the mechanisms of host–pathogen interactions. Furthermore, these cell lines upon transfection, using pEGFP-C1 and pEGFP-aMT2.5 (ayu metallothionein promoter), produced significant fluorescent signals indicating their utility for exogenous studies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2761.2003.00434.x
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of thickness on the electrical properties of metalorganic chemical vapor deposited Pb(Zr, Ti)O3 (25–100 nm) thin films on LaNiO3 buffered Si (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1509-1515 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pb(Zr, Ti)O3 (PZT) thin films with (100) preferred orientation were prepared using metalorganic chemical vapor deposition on LaNiO3 (LNO) buffered platinized Si with thickness varying from 25–100 nm. The dependence of electrical properties of PZT films on thickness was studied using several techniques, including polarization–electric field (P–E), temperature variable current–voltage (I–V), and capacitance–voltage (C–V) measurements. Because of the formation of Schottky barriers at ferroelectric/electrode interfaces, built-in electric fields are present. A progressive increment in carrier concentration and interfacial built-in electric field versus reducing PZT film thickness was observed, which is believed to be a dominant factor controlling the measured dielectric/ferroelectric properties. The higher built-in electric field in thinner PZT films would pin the dipoles at the interfacial region and retard the response of dipoles to the external electric field. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1383262
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  • 3
    Electronic Resource
    Electronic Resource
    Properties and structures of diamond-like carbon film deposited using He, Ne, Ar/methane mixture by plasma enhanced chemical vapor deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8122-8131 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond-like carbon (DLC) films have been deposited by a magnetically enhanced plasma (MEP) chemical vapor deposition (CVD) system. The properties and structures of DLC films deposited by MEP-CVD using various gases (methane, He/methane, Ne/methane, and Ar/methane) were studied. The mechanical properties in terms of hardness, Young's modulus and stress, and optical properties in terms of optical band gap and refractive index were enhanced by adding inert gas in methane plasma. The magnitude of the effects on the properties for various inert gases was found as Ne, Ar, and He, on the surface roughness was found as Ar, Ne, and He. The Raman characteristic shows a dependence of the bias voltage and inert-gas/methane ratio, as well as the inert gases dilution. The Raman spectroscopy analysis indicates that the changes of properties of the DLC films are due to the structural changes, such as sp2 and sp3 content in the films prepared under various deposition conditions. The films deposited in Ne/methane show the lowest disordered (D) peak to graphitic (G) peak intensity ratio, the D and G peak positions; highest stress, hardness, Young's modulus, optical band gap, and lowest reflective index. The films deposited in Ar/methane show the lowest surface roughness. This was proposed due to the optimum balance in the inert gas ionization potential and atomic mass. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373507
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical characteristics of 25 nm Pr(ZrTi)O3 thin films grown on Si by metalorganic chemical vapor deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2157-2159 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pb(Zr0.5Ti0.5)O3 thin films 25 nm in thickness were grown on LaNiO3/Pt/Ti buffered Si substrates at 600 °C by metalorganic chemical vapor deposition. P–E studies showed a remanent polarization value of 8 μC/cm2 with a coercive field of 200 kV/cm. In polarization fatigue studies, these films only showed slight degradation in remanent polarization up to 4×108 cycles (±3 V oscillation) before breakdown. Moreover, the effect of space charge on the C–V behavior of these films was illustrated I–V characteristics of these films were also described. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1305824
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  • 5
    Electronic Resource
    Electronic Resource
    Determination of the optical constants of the γ-phase GdH3 thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7798-7801 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the optical transmittance of thin films of gadolinium trihydride GdH3 over a broad spectral range, 0.05–6 eV. The analysis indicates that GdH3 is a wide-gap semiconductor with an energy gap of 2.55 eV. The fundamental absorption and impurity-related transitions dominate the spectra in the high-energy region, 1–6 eV. Hydrogen vibration modes dominate the spectra in the low-energy region, 0.05–0.2 eV. A strong free-carrier absorption effect is observed. In addition, the frequency-dependent refractive index, extinction coefficient, dielectric function, and optical conductivity are determined from the transmission spectra. This work also evaluates the plasma frequency associated with free carriers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373457
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  • 6
    Electronic Resource
    Electronic Resource
    Magnetic properties and microstructure of magnesium-doped Nd-Fe-B magnets (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5513-5515 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A number of Nd15 Fe79−x Mgx B6 magnets with x up to 0.41 and pseudoternary Nd2(Fe1−yMgy)14B compounds with y up to 0.081 have been prepared by conventional powder metallurgy processes. Magnetic measurements indicate that for the magnet alloys i Hc increases as x increases up to 0.25 without a loss in Br, hence the (BH)max values are slightly enhanced. The maximum increase in i Hc is about 15% for x=0.25. Extensive Mg-rich precipitates inside the Nd-rich phase have been observed by electron probe microanalysis (EPMA). Higher Mg intensity at grain boundaries is also detected by EPMA. The reasons for the i Hc increase might be the grain boundary cleaning ability of Mg dopant. For the pseudoternary compounds, the anisotropy field HA is found to increase only slightly due to Mg doping while TC remains practically unchanged.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342320
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  • 7
    Electronic Resource
    Electronic Resource
    Correlation between Si–H/D bond desorption and injected electron energy in metal–oxide–silicon tunneling diodes (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 637-639 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal–oxide–silicon tunneling diodes with SiO2/Si interface passivated by hydrogen or deuterium are stressed under various constant current conditions. When the energy of injected electrons exceeds a threshold value (∼3 eV), both hydrogen and deuterium passivated devices reveal similar soft breakdown behaviors. On the contrary, when the injected electrons with low energy (〈3 eV) at high current density stress, a giant isotope effect is observed in the deuterated devices due to the resonance between the Si–D bond bending mode and the transverse optical phonon of bulk silicon. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1343477
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  • 8
    Electronic Resource
    Electronic Resource
    Enhanced reliability of electroluminescence from metal–oxide–silicon tunneling diodes by deuterium incorporation (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1397-1399 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reliability of electroluminescence from metal–oxide–silicon (MOS) tunneling diodes was improved by the incorporation of deuterium. The deuterium was incorporated by the deuterium prebake and the postoxide deuterium annealing. At constant current stress of 100 mA, a deuterium-treated n-channel MOS tunneling light-emitting diode shows that the integrated light emission intensity increases slightly about 6% after 10 000 s operation, while the hydrogen-treated device shows a 30% decrease of the integrated light emission intensity. The hydrogen release by the electrons tunneling from the gate electrode to Si and the formation of interface defects are responsible for the degradation of light output in the hydrogen-treated samples. An annealing model is also given to explain the slight increase of light output in the deuterium-treated samples. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1353817
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  • 9
    Electronic Resource
    Electronic Resource
    Surveys of Volatile Organic Compounds in Soil and Groundwater at Industrial Sites in Taiwan (2000)
    Springer
    Bulletin of environmental contamination and toxicology 65 (2000), S. 654-659 
    Details
    ISSN: 1432-0800
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s0012800173
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  • 10
    Electronic Resource
    Electronic Resource
    Coarsening of tungsten particles in W-Ni-Fe alloys (1989)
    Springer
    Journal of materials science 24 (1989), S. 500-504 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The coarsening kinetics of tungsten particles in W-Ni-Fe alloys during liquid phase sintering was studied. The particle growth rate increased with increasing volume fraction of tungsten, and the growth isotherms followed the cubic rate law, suggesting that the diffusion in liquid phase was the rate-limiting step. However, the particle size distributions were consistent with the reaction-controlled size distribution predicted by the theory of Liftshitz, Slyozov and Wagner. These experimental results could be explained by the diffusion-controlled growth according to the theory developed by Ardell.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01107433
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