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  • American Institute of Physics (AIP)  (14)
  • American Chemical Society  (8)
  • Wiley-Blackwell  (2)
  • 2000-2004  (7)
  • 1985-1989  (17)
  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 89 (1985), S. 2725-2727 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 90 (1986), S. 2231-2236 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 123-128 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ionic conductivity σ and mobility μ in the amorphous network polymers from poly(propylene oxide) (PPO) containing lithium perchlorate (LiClO4) at the concentration of [LiClO4]/[PO unit]=0.042 and 0.076 were investigated by means of complex impedance and time-of-flight methods. The σ values of the PPO–LiClO4 complexes reached 10−5 S cm−1 at 70 °C. The temperature dependence of σ deviated from a single Arrhenius behavior above a critical temperature (−1 °C and 11 °C) which approximately corresponded to the glass transition temperature Tg. The μ values were relatively high and changed from 10−6 to 10−5 cm2 V−1 s−1 in the temperature range of 40–100 °C. The Nernst–Einstein equation correlated μ with the ionic diffusion coefficient D. The Williams–Landel–Ferry equation with C1(approximately-equal-to)5 and C2(approximately-equal-to)30–50 held with a temperature dependence of D in the order of 10−8–10−7 cm2 s−1. The change in the number of ionic carriers n with temperature obeyed the Arrhenius equation with the activation energy of 0.26 and 0.34 eV. The degree of dissociation for LiClO4 in the PPO networks was 1–6%, and the dissociation was facilitated in the low LiClO4 concentration complex. The temperature dependence of σ above Tg was interpreted quantitatively in terms of n and μ.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4403-4406 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phase transformation behavior of hexagonal germanium nitride, including both α- and β-Ge3N4, has been studied under shock wave compression. The shock compressed quenched samples indicate phase transformation from hexagonal into a cubic spinel structure (γ-Ge3N4). This transformation is completed with increasing shock pressure up to 40–46 GPa (temperature of 1300–1500 K). The lattice constant of γ-Ge3N4 is measured to be 0.820 63±0.000 19 nm, and the crystal density 6.581 g/cm3, by the powder x-ray diffraction. The stability of γ-Ge3N4 also has been investigated under shock wave compression. It is found that the spinel structure is very stable, and up to at least 63 GPa (temperature of ∼1700 K) there is no indication of the formation of a postspinel phase. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3070-3072 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A cubic Si3N4 phase/nanostructure has been characterized by means of high-resolution analytical electron microscopy. The specimen prepared from β-Si3N4 powders at a high pressure and temperature by shock wave compression contained nanometer-sized Si3N4 crystallites. The results of nano-beam electron diffraction analysis and high-resolution lattice images as well as computer simulations revealed that the Si3N4 crystallites had a cubic symmetry with spinel structure. The electron energy loss spectrum suggested that the chemical compositions of these nanostructures were close to Si3N4. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1548-1551 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Interferometer measurements are extremely informative in shock wave studies allowing direct evaluations of the gas density. The primary goal of the work presented is to build a laser interferometer that meets the requirements of the highest possible simplicity, economy, convenience, and ease of construction. In our experiments, we used a low average power (10 mW) He–Ne laser without complication, expense, and environmental section. The He–Ne laser interferometer with the Michelson arrangement was used to measure the line-averaged gas densities of shock waves. Temporal and spatial measurements of the density were performed for shock wave developments from high-current pulse discharges. The shock wave propagates in the radial direction of the discharge channel with supersonic speed. The shock velocity, however, decreased from 2–0.5 km/s with the distance of the shock propagation. The width of the high density region, that is in the vicinity of the shock front was compressed from 3.5 to 1.8 mm according to the time variation of the discharge current. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 185-186 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of ion implantation on recrystallization of films has been investigated using AlNx (x〈1) films as targets. The 750 A(ring) AlNx (x〈1) films were deposited on Si(111), glassy carbon, and commercial glass by an activated reactive evaporation method in a nitrogen atmosphere. The 80 keV N+ implantations were carried out near room temperature with doses ranging from 5×1016 to 5×1017 N+ions/cm2 at 1×10−6 Torr. The x-ray diffraction patterns revealed that N implantation enhances a (002) orientation of AlN, growth of which depends on doses. The optical transmittance of the AlNx films is also improved by N implantation, depending on doses. N implantation into AlNx (x〈1) even without any annealing is effective for recrystallization of the films, which leads to improvement of optical properties.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6579-6581 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic properties of the intergranular phase in the bcc-Fe/NdFeB nanocomposite alloys containing Nb and Co were investigated with Mössbauer spectroscopy. The alloys were prepared with melt-spinning and post-annealing method. It is revealed that the intergranular phase is not amorphous as considered so far and consists of several thin layers outside the nanoscale grains of bcc-Fe and Nd2Fe14B. The hyperfine field in the layer on the surface of the grain is rather strong and the structure of this layer is similar to the grain. The field in the outer layers is reduced because the structure becomes indistinct gradually as the layer is apart from the grain. The high remanence and coercive field of the nanocomposite alloys may originate from the magnetic coupling between grains via the intergranular ferromagnetic phase. © 2000 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4157-4162 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High performance thin-film heads for disk drive systems have been developed based on a dry process. Heads were computer simulated and optimal design was carried out. Relationships among Ni-Fe composition, domain structure and wiggle of the read-write waveform were obtained. Based on these results, optimum Ni-Fe composition range was determined. A planarization procedure for an inbedding insulator of the conductor coil was developed. Also narrow track patterning and gap depth controlling procedures were developed. Using these procedures, a two-layered seventeen-turn thin-film head for a large capacity disk drive system (23 Mb/in.2) has been developed. The head exhibited excellent read-write characteristics.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4898-4902 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaInP(N)/GaAs( p) heterojunction bipolar transistor was fabricated by metalorganic chemical vapor deposition (MOCVD) for the first time. The common-emitter current gain exceeded 200 at a current density around 10 A/cm2 and the offset voltage was as small as 50 mV. Thermionic emission theory indicates that the conduction-band discontinuity (ΔEc) at GaInP/GaAs heterointerface is as small as 30 meV at room temperature and this value was more than 160 meV smaller than 0.19–0.22 eV obtained by the C-V profile method. The band-gap energy for MOCVD-grown GaInP was 60 meV smaller than the intrinsic band-gap energy (1.91 eV), but this value is too small to explain the difference between the present ΔEc value and the previously reported ΔEc value.
    Type of Medium: Electronic Resource
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