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  • American Institute of Physics (AIP)  (22)
  • American Ceramics Society
  • 2000-2004  (15)
  • 1985-1989  (11)
  • 1960-1964
  • 1
    Electronic Resource
    Electronic Resource
    Supersymmetry, parastatistics, and operator realizations of a Lie algebra (1988)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 29 (1988), S. 16-20 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The algebraic structure of parastatistics has been generalized and it is found to be consistent with supersymmetric quantum mechanics with supercharges constructed out of the generalized para-Bose and para-Fermi operators. It is further shown that the operator algebra of generalized parastatistics offers a realization of the (graded) orthosymplectic group similar to that of orthogonal and symplectic groups using conventional parastatistics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.528170
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  • 2
    Electronic Resource
    Electronic Resource
    Electronic linear energy transfer dependent molecular structural growth in polyethylene terephthalate (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4922-4927 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films (13 μm) of polyethelene terephthalate (PET) are irradiated by different swift metallic heavy ions (180 MeV Ag14+ and 200 MeV Au15+) with the projectile linear energy transfer (LET) (∼10–14 keV/nm), respectively. LET dependence on the molecular structural changes in PFT irradiated at different ion fluences has been studied by the Fourier transform infrared spectroscopy. The study has revealed that beyond a critical LET entirely different pathways of amorphization beginning with partial recrystallization at lower ion fluence impact occurs in PET, contrary to the earlier established results. At considerably higher LET (∼14 keV/nm), the most characteristic crystalline stretching and bending vibration bands such as at 850 cm−1 (CH2 rocking), 972 cm−1 (C(Double Bond)O stretching), 1341 and 1471 cm−1 (CH2 bending) in PET have shown a significant rise in the respective infrared absorbance intensities upon lower ion fluence (∼1011 ions/cm2) impact. The absence of previously reported unsaturations such as alkynes at both the LET beam used are also observed. Interestingly, the aromatic system also appears to be unstable and participating in the modification process, particularly at the higher LET (∼14 KeV/nm). Possible interpretations are discussed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1462424
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  • 3
    Electronic Resource
    Electronic Resource
    Plasma enhanced metalorganic chemical vapor deposition of amorphous aluminum nitride (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5825-5831 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma enhanced deposition of amorphous aluminum nitride (AlN) using trimethylaluminum, hydrogen, and nitrogen was performed in a capacitively coupled plasma system. Temperature was varied from 350 to 550 °C, and pressure dependence of the film structure was investigated. Films were characterized by Fourier transform infrared, Rutherford backscattering (RBS), ellipsometry, and x-ray diffraction (XRD). The films are amorphous in nature, as indicated by XRD. Variations in the refractive index were observed in ellipsometric measurements, which is explained by the incorporation of carbon in the films, and confirmed by RBS. Capacitance–voltage, conductance–voltage (G–V), and current–voltage measurements were performed to reveal bulk and interface electrical properties. The electrical properties showed marked dependence on processing conditions of the AlN films. Clear peaks as observed in the G–V characteristics indicated that the losses are predominantly due to interface states. The interface state density ranged between 1010 and 1011 eV−1 cm−2. Annealing in hydrogen resulted in lowering of interface state density values. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1413484
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  • 4
    Electronic Resource
    Electronic Resource
    Pulse stretching due to partial temporal overlap of two modes in a TEA CO2 laser (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 579-580 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Pulse duration as long as 14 μs has been obtained from a single longitudinal mode TEA CO2 laser. Such stretching occurred under conditions for which oscillation on a higher order transverse mode followed that on the TEM00 mode with partial temporal overlap between the two. Control of the intracavity aperture size in conjunction with cavity length tuning helped realize such an oscillation condition. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150246
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  • 5
    Electronic Resource
    Electronic Resource
    Visible Frequency Thin Film Photonic Crystals from Colloidal Systems of Nanocrystalline Titania and Polystyrene Microspheres (2002)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 85 (2002), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: This work describes a simple and novel ceramic processing technique to form periodic ordered structures in ceramic materials with a uniform pore size distribution. This material shows photonic gaps at visible/near-IR wavelengths. Monodisperse colloidal polystyrene microspheres are self-organized into a crystalline structure of close-packed spheres in a suspension of nanocrystalline titania. The nanoparticle titania fills the intersphere region simultaneously during colloidal crystallization. Removal of the polystyrene microspheres by calcination at a temperature of 520°C results in a periodic porous structure with a high refractive index background material. Crystals having ordered regions, a few millimeters across with typical grain sizes of 50–70 μm, are grown as thin films on substrates including glass and silicon. Optical reflectivity measurements indicate peaks at the stop band wavelengths that scale with the pore size. Visual inspection and optical microscopy reveal uniform colored regions for crystals with periodicity comparable to visible wavelengths. Despite the presence of cracks resulting from drying and heat treatment as well as numerous grain boundaries, optical characterization clearly demonstrates a photonic band gap. Reflectance peaks due to a pseudogap can be shifted by application of high pressure. In the following sections we will describe the experimental procedure and discuss optical reflectance and transmission measurements that can reveal information about the crystals, namely, the lattice constant, the refractive index, and the filling fraction of the background material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2002.tb00284.x
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  • 6
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxial growth and characterization of InSb on Si (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1016-1018 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial layers of InSb have been grown on Si substrates by molecular beam epitaxy. Room-temperature electron mobilities are 48 000 and 39 000 cm2/V s for 3.2 μm-thick InSb with and without a thin GaAs buffer, respectively. The corresponding carrier concentrations are 2.2×1016 and 2.7×1016 cm−3. A sample with an InSb thickness of 8 μm exhibited room-temperature mobilities as high as 55 000 cm2/V s with carrier concentrations of about 2.0×1016 cm−3. A sharp band-edge transmission spectrum is observed at room temperature for the 8 μm layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100784
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  • 7
    Electronic Resource
    Electronic Resource
    Time delay of stimulated Raman scattering of micron-size droplets (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1642-1644 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed time delay of several nanoseconds of the stimulated Raman scattering from 80-μm-diam CCl4 droplets. The same time delay is observed in the laser-induced breakdown of the droplets. No time delay is observed for the stimulated Raman scattering and the laser-induced breakdown of the bulk liquid CCl4. We suggest that the observed time delay is related to the time required to build up a strong field enhancement inside micron-size droplets.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99708
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  • 8
    Electronic Resource
    Electronic Resource
    Texture formation and enhanced critical currents in YBa2Cu3O7 (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1525-1527 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an increase of a factor up to 5 in JC on mixing varying amounts of Ag2O with YBa2Cu3O7. The increase correlates with an increase in texture as seen by x-ray diffraction intensities. Microstructure indicates the formation of platelets with c axis normal to the platelets.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99696
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical properties of fluorinated amorphous carbon films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4417-4421 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the capacitance–voltage (C–V), conductance–voltage (G–V), and current–voltage characteristics of fluorinated amorphous carbon (a-C:Fx) films using metal/a-C:Fx/Si and metal/a-C:Fx/metal structures, respectively. Samples annealed in a vacuum were also studied. The C–V curves of the as-deposited sample are stretched about the voltage axis. Interface state density of 4.1×1011 cm−2 eV−1 at the midgap was calculated. Annealing the sample deposited on Si in a vacuum caused more frequency dispersion in the C–V and G–V curves, probably due to the diffusion of carbon into silicon. The bulk density of states for samples deposited on metal, measured by space-charge-limited current technique, decreased from 4×1018 eV−1 cm−3 for the as-deposited sample, to 7×1017 eV−1 cm−3 for the annealed sample. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1353804
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  • 10
    Electronic Resource
    Electronic Resource
    Recombination velocity at molecular-beam-epitaxial GaAs regrown interfaces (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2571-2573 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have estimated the recombination velocity and minority-carrier diffusion length at and near molecular-beam-epitaxial GaAs regrowth interfaces. The diffusion length in the regrown layers is ∼1–3 μm and is lowered to 0.3 μm at the interface. The interface recombination velocity is ∼105 cm/s. These parameters are better for a sample which was ion milled and lamp annealed before regrowth, compared to a sample which was wet-chemical etched and annealed in the growth chamber under arsenic flux before regrowth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342786
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