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  • 2000-2004  (40)
  • 1985-1989  (82)
  • 1970-1974  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Mechanisms for the improved stability of C54–TiSi2 on (001)Si by the addition of N2 to Ar during Ti sputtering (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1779-1783 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Addition of N2 to Ar during Ti sputtering has been found to improve the thermal stability of TiSi2. For samples sputtered with a mixture of Ar and N2, TiSi2 was found to be stable after 1050 °C, 30 s annealing. Furthermore, the phase transformation temperature from the C49 to C54 phase was not affected with the addition of a small amount of nitrogen. The stuffing of grain boundaries of TiSi2 and TiN/TiSi2 interfaces by nitrogen atoms is thought to retard the transport of Si and Ti atoms. In addition, titanium nitride particles embedded in TiSi2 near the TiN/TiSi2 interface may also protect the TiSi2 films from plastic deformation and retard the grain growth during high temperature annealing. Smaller average grain size of C54–TiSi2 in samples prepared with the addition of N2 to Ar during Ti sputtering than that in pure Ti samples is also beneficial in enhancing the thermal stability. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1385577
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  • 2
    Electronic Resource
    Electronic Resource
    Growth kinetics of SiO2 on (001) Si catalyzed by Cu3Si at elevated temperatures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1412-1417 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxidation of Si catalyzed by 170-nm-thick Cu3Si at elevated temperatures has been investigated by transmission electron microscopy, glancing angle x-ray diffraction, and Auger electron spectroscopy. For wet oxidation at 140–180 °C, the thickness of the oxide was found to increase parabolically with time with an activation energy of 0.4±0.2 eV. The activation energy is close to that of diffusivity of Cu in Si. At 180–200 °C, the growth rate became slower with increasing temperature. The growth of oxide tended to be discontinuous at the surface as the oxidation temperature was increased to a temperature at or higher than 300 °C. The anomalously fast growth of oxide at low temperatures is attributed to the presence of filamentary structures of Cu clusters in the oxide to expedite the diffusion of the oxidants through oxide. At 200–250 °C, more Cu atoms diffuse to the Cu3Si/Si interface and less Cu atoms stay in the oxide, which slows down the oxide growth. The lack of filamentary structures of Cu as diffusion paths retards the growth of SiO2. At 300 °C or higher temperatures, the lack of filamentary structures of Cu clusters stopped the growth of continuous oxide layer altogether. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373832
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  • 3
    Electronic Resource
    Electronic Resource
    Phase formation and electrical resistivity of ultrahigh vacuum deposited Cu thin films on epitaxial Si–Ge layers on Si and Ge (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2237-2244 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phase formation and the morphological stability of ε1-Cu3Ge and ε1-Cu3(Si1−xGex) in Cu/epitaxial-Ge(e-Ge)/(111)Ge, Cu/(001)Ge, Cu/e-Ge/(111)Si, and Cu/(001)Si–Ge alloys have been investigated by transmission electron microscopy in conjunction with the energy dispersive spectrometry as well as by sheet resistance measurement. Epitaxial Cu and epitaxial ζ-Cu5Ge were found to form in as-deposited Cu/e-Ge/(111)Ge and Cu/e-Ge/(111)Si. On the other hand, textured Cu was found to form in the other systems. Polycrystalline ε1-Cu3Ge and ε1-Cu3(Si1−xGex) were the only phases formed in 150–500 °C annealed Cu/Ge and (Cu/e–Ge/Si and Cu/Si–Ge alloys) systems, respectively. They were found to agglomerate at 550 °C. The room-temperature oxidation of substrate in the presence of Cu3(Si1−xGex) was found only in the Cu/Si0.7Ge0.3 system. From the sheet resistance measurement, ε1-Cu3Ge has the lowest resistivity of 7 μΩ cm after 400 °C annealing. The electrical resistivity was found to decrease with the Ge content. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372167
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  • 4
    Electronic Resource
    Electronic Resource
    Comparison of plasma sheet dynamics during pseudobreakups and expansive aurorae (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 1127-1132 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Global auroral images and plasma sheet ion distributions and magnetic field data are examined for two intervals when the Ultraviolet Imager (UVI) onboard the Polar spacecraft was imaging the entire northern auroral oval and, at the same time, the Wind spacecraft was passing through the near-Earth plasma sheet. On 26 July 1997, UVI recorded a series of brief, localized auroral brightenings known as pseudobreakups. On 27 March 1996, UVI observed several global expansions of auroral activity. Large variations in the magnetic field were observed by the Wind magnetometer, large velocity moments were derived from Wind ion measurements, and ions were accelerated to mega-electron-volt energies during both types of activity. The plasma sheet dynamics appear very similar during these two different types of auroral activities. Closer inspection of the ion distribution functions and energy spectra indicate that the plasma sheet dynamics need to be characterized kinetically. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1355679
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  • 5
    Electronic Resource
    Electronic Resource
    Interfacial reactions of iron thin films on silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5246-5250 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial reactions of iron thin films on silicon have been investigated by transmission electron microscopy. FeSi was found to form after 400 °C annealing. Small amount of Fe3Si was detected in samples annealed at 450 to 500 °C. β-FeSi2 grains were predominant with a few FeSi grains remained in samples annealed at 600 °C. β-FeSi2 was found to be the dominant phase, whereas α-FeSi2 was predominant in samples annealed at 900–1100 °C in N2 ambient and in vacuum, respectively. Two-step annealings were effective in promoting the growth and improving the quality of epitaxial FeSi2. More uniform growth of epitaxial FeSi2 was observed for samples annealed in vacuum than those heat treated in N2 ambient. The mechanisms of epitaxial growth and the influence of impurities on the interfacial reactions are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335264
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  • 6
    Electronic Resource
    Electronic Resource
    Growth kinetics of amorphous interlayers in Ti thin films on epitaxial Si–Ge layers on silicon and germanium (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6110-6115 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth kinetics of amorphous interlayers (a interlayers) formed by solid-state diffusion in ultrahigh vacuum deposited polycrystalline Ti thin films on germanium and epitaxial Si1−xGex (x=0.3, 0.4 and 0.7) alloys grown on (001) Si and (111) Ge has been investigated by transmission electron microscopy and Auger electron spectroscopy. The growth of a interlayers in all systems was found to follow a linear growth behavior initially. The activation energies for the linear growth of a interlayers were found to decrease with the Ge content and are 1.0±0.2, 0.95±0.2, 0.85±0.2, and 0.7±0.2 eV for Ti/Si0.7Ge0.3, Ti/Si0.6Ge0.4, Ti/Si0.3Ge0.7, and Ti/Ge systems, respectively. The maximum thickness of a interlayer was found to increase with the Ge content with x≤0.4. On the other hand, the formation temperature of crystalline phase was observed to decrease with the Ge content. Essential factors for the formation and growth of a interlayer are discussed. The results are compared with the Ti/Si system. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1365439
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of arsenic concentration on the formation of dislocation loops near the projected ion range in high-dose As+-implanted (001) Si (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2304-2306 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of a two-layer structure and the inhibition of the formation of dislocation loops near the projected ion range (Rp ) have been observed by cross-sectional transmission electron microscopy in 80 keV, 1×1016 and 2×1016/cm2 As+-implanted (001) Si, respectively. The correlations among the arsenic concentration, electrical inactivation of impurity, suppression of the formation of interstitial loops near Rp, and retardation of the epitaxial regrowth rate provide significant insight into the point-defect migration and agglomeration during solid phase epitaxial regrowth of implantation amorphous silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102045
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  • 8
    Electronic Resource
    Electronic Resource
    Bulk superconductivity with Tc (zero) up to 95 K in a Tl0.5Pb0.5Ca0.9Ce0.1Sr2Cu2 oxide with an Y1Ba2Cu3Oy-like structure (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2464-2466 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bulk superconductivity with Tc (zero) up to 95 K in a Tl0.5Pb0.5Ca0.9Ce0.1Sr2Cu2 oxide with an Y1Ba2Cu3Oy -like structure was observed. Single-phase samples, tetragonal in structure with a=0.380±0.001, c=1.195±0.001 nm, and of P4/mmm space group, were prepared. The results represent the first case where Ce substitution significantly raised the Tc of a known compound. The samples were remarkably homogeneous both in composition and structure. The compounds were highly reproducible and stable. The preparative conditions were found to be much less stringent than those of other copper-based high Tc superconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101536
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  • 9
    Electronic Resource
    Electronic Resource
    Structural and microstructural characterization of a high Tc superconducting BiSrCaCu oxide (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 913-915 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystal structure and microstructures of a high Tc BiSrCaCuO (BSCCO) compound were characterized by transmission electron microscopy, x-ray diffraction (XRD), and energy dispersive spectrometry (EDS). Convergent beam electron diffraction (CBED) analysis established that the crystal is of mm2 symmetry. Combined with electron diffraction, XRD, and EDS data, the high Tc superconducting BSCCO compound was found to be of the Pnn2 space group, orthorhombic in structure with a=0.540 nm, b=2.689 nm, and c=3.040 nm and with an approximate composition of Bi2Sr2CaCu2Oy. Diffraction contrast analysis indicated that the dislocations are predominantly of screw character with [010] or [001] Burgers vectors. However, edge type dislocations and dislocations with [100] Burgers vector were also observed. The magnitude of the Burgers vector along the [100] direction was determined to be 1/2 [100] by high-resolution lattice imaging. Stacking faults and small-angle grain boundaries were frequently observed. The presence of a high density of defects in the superconducting oxide may facilitate the processing of the material and serve as effective flux line barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100157
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  • 10
    Electronic Resource
    Electronic Resource
    Growth kinetics of amorphous interlayer formed by interdiffusion of polycrystalline Ti thin-film and single-crystal silicon (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1217-1219 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth kinetics of amorphous interlayer (a interlayer) in polycrystalline Ti films on single-crystal-silicon has been studied by cross-sectional transmission electron microscopy. The growth was found to follow a linear growth law initially in samples annealed at 350–425 °C. The activation energy of the linear growth was measured to be 1.6±0.3 eV. Maximum thicknesses of the a interlayers were measured to be of the order of 10 nm. The formation of an a interlayer was observed in samples annealed at a temperature as high as 600 °C. The formation and growth kinetics of a interlayers in Ti/Si and Ni/Zr systems are compared. Essential factors for the formation and growth of an a interlayer are discussed. The results represent the first report on the growth kinetics of an a interlayer in metal thin films on single-crystal silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100720
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