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  • Communications and Radar  (4)
  • 2000-2004  (4)
  • 1985-1989
  • 1970-1974
  • 1
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    Current Status of Thin Film (Ba,Sr) TiO3 Tunable Microwave Components for RF Communications (2000)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: The performance of proof-of-concept ferroelectric microwave devices has been moving steadily closer to the level needed for satellite and other rf communications applications. This paper will review recent progress at NASA Glenn in developing thin film Ba(x)Sr(1-x)TiO3 tunable microwave components for these applications. Phase shifters for phased array antennas, tunable filters and tunable oscillators employing microstrip and coupled microstrip configurations will be presented. Tunabilities, maximum dielectric constants, and phase shifter parameters will be discussed (e.g., coupled microstrip phase shifters with phase shift over 200 deg. at 18 GHz and a figure of merit of 74.3 deg./dB). Issues of postannealing, Mn-doping and Ba(x)Sr(1-x)TiO3 growth on sapphire and alumina substrates will be covered. The challenges of incorporating these devices into larger systems, such as yield, variability in phase shift and insertion loss, and protective coatings will also be addressed.
    Keywords: Communications and Radar
    Type: NASA/TM-2000-210233 , E-12241 , NAS 1.15:210233 , Integrated Ferroelectrics; Mar 12, 2000 - Mar 15, 2000; Aachea; Germany
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 2
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    Current Status of Thin Film (Ba,Sr)TiO3 Tunable Microwave Components for RF Communications (2000)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: The performance of proof-of-concept ferroelectric microwave devices has been moving steadily closer to the level needed for satellite and other rf communications applications. This paper will review recent progress at NASA Glenn in developing thin film Ba(x)Sr(1-x)TiO3 tunable micro-wave components for these applications. Phase shifters for phased array antennas, tunable filters and tunable oscillators employing microstrip and coupled microstrip configurations will be presented. Tunabilities, maximum dielectric constants, and phase shifter parameters will be discussed (e.g., coupled microstrip phase shifters with phase shift over 200 deg at 18 GHz and a figure of merit of 74.3 deg/dB). Issues of post-annealing, Mn-doping and Ba(x)Sr(1-x) TiO3 growth on sapphire and alumina substrates will be covered. The challenges of incorporating these devices into larger systems, such as yield, variability in phase shift and insertion loss, and protective coatings will also be addressed.
    Keywords: Communications and Radar
    Type: Integrated Ferroelectrics; Mar 12, 2000 - Mar 15, 2000; Aachen; Germany
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 3
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    A Comparison of MOCLD With PLD Ba(x)Sr(1-x)TiO3 Thin Films on LaAlO3 for Tunable Microwave Applications (2002)
    In:  CASI
    Details
    Publication Date: 2019-07-10
    Description: Historically, tunable dielectric devices using thin crystalline Ba(x)Sr(1-x)TiO3 (BST) films deposited on lattice-matched substrates, such as LaAlO3, have generally been grown using pulsed laser deposition (PLD). Highly oriented BST films can be grown by PLD but large projects are hampered by constraints of deposition area, deposition time and expense. The Metal-Organic Chemical Liquid Deposition (MOCLD) process allows for larger areas, faster turnover and lower cost. Several BST films deposited on LaAlO3 by MOCLD have been tested in 16 GHz coupled microstrip phase shifters. They can be compared with many PLD BST films tested in the same circuit design. The MOCLD phase shifter performance of 293 deg. phase shift with 53 V/micron dc bias and a figure of merit of 47 deg./dB is comparable to the most highly oriented PLD BST films. The PLD BST films used here have measured XRD full-width-at-half-maxima (FWHM) as low as 0.047 deg.. The best FWHM of these MOCLD BST films has been measured to be 0.058 deg.
    Keywords: Communications and Radar
    Type: NASA/TM-2002-210906 , E-12783 , NAS 1.15:210906
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 4
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    A Comparison of MOCLD With PLD Ba(x)Sr(1-x)TiO3 Thin Films on LaAlO3 for Tunable Microwave Applications (2003)
    In:  CASI
    Details
    Publication Date: 2019-07-10
    Description: Historically, tunable dielectric devices using thin crystalline Ba(x)Sr(1-x),TiO3 (BST) films deposited on lattice-matched substrates, such as LaAlO3 have generally been grown using pulsed laser deposition (PLD). Highly oriented BST films can be grown by PLD but large projects are hampered by constraints of deposition area, deposition time and expense. The Metal-Organic Chemical Liquid Deposition (MOCLD) process allows for larger areas, faster turnover and lower cost. Several BST films deposited on LaAlO, by MOCLD have been tested in 16 GHz coupled microstrip phase shifters. They can be compared with many PLD BST films tested in the same circuit design. The MOCLD phase shifter performance of 293 degree phase shift with 53 V/micron dc bias and a figure of merit of 47 degree/dB is comparable to the most highly oriented PLD BST films. The PLD BST films used here have measured XRD full-width-at-half-maxima (FWHM) as low as 0.047 degrees. The best FWHM of these MOCLD BST films has been measured to be 0.058 degrees.
    Keywords: Communications and Radar
    Type: NASA/TM-2002-210906/REV1 , E-12783-1/REV1 , NAS 1.15:210906/REV1
    Format: text
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    NASA TECHNICAL REPORTS
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