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  • 2000-2004  (282)
  • 1985-1989  (50)
  • 1975-1979  (12)
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  • 1
    Electronic Resource
    Electronic Resource
    Anisotropic self-focusing of intense lasers in undercritical plasma (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 2974-2979 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A variational principle approach to study the anisotropic self-focusing of ultrarelativistic laser beams in the undercritical plasma is performed in this paper. The presence of the anisotropic self-focusing laser intensity profile is viewed as a result of unstabilization of the isotropic profile. The isotropic laser profile is solved and then its stability relative to the anisotropic one is discussed. Numerical results show that parameters of the isotropic profile are important for its possibility of anisotropic unstabilization. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1370060
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  • 2
    Electronic Resource
    Electronic Resource
    Evolution of quasi-breakdown in thin gate oxides (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5302-5306 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism for quasi-breakdown (QB) in thin gate oxides was studied using bipolar current stress and unipolar constant current stress. Continual bipolar current stressing on the gate oxide shows two distinct stages of QB—recoverable and unrecoverable QB. During the recoverable QB stage, the gate leakage current recovers to the stress-induced leakage current level upon application of a proper reverse bias. In contrast, no electrical recovery is observed within the unrecoverable QB stage. This stage is characterized by a higher gate leakage current than that of the recoverable QB stage and a very stable gate voltage during stressing. Carrier separation measurements further demonstrate that two different modes of conduction can occur during the recoverable QB stage. In the early stage, Fowler–Nordheim electron tunneling dominates the conduction mechanism although a small hole current is observed. With prolonged electrical stress, the hole direct tunneling current becomes dominant. Based on the aforementioned observations and the monitoring of the generation of oxide traps using the direct-current current–voltage technique, a QB model of positive hole trapping at the anode is proposed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1464648
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  • 3
    Electronic Resource
    Electronic Resource
    Analysis of protein-protein relationships in 30S ribosome assembly intermediates using protection from proteolytic digestion (1979)
    s.l. : American Chemical Society
    Biochemistry 18 (1979), S. 1275-1281 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00574a024
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  • 4
    Electronic Resource
    Electronic Resource
    Comment on "New evidence of small lattice relaxation for the DX center in AlxGa1−xAs'' [Appl. Phys. Lett. 51, 1358 (1987)] (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1645-1645 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level transient spectroscopy has been performed on the DX center in the Ga0.65Al0.35As:Te as a function of pressure. The lattice relaxation we observed showed that the results of Talwar et al. (small lattice relaxation) are inconsistent and inconclusive. Our results significantly weaken their evidence in favor of small lattice relaxation. (AIP)
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99061
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  • 5
    Electronic Resource
    Electronic Resource
    Structural and dielectric investigation of doped Sr0.61Ba0.39Nb2O6 crystals (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5644-5646 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped, Ce, and Co-doped Sr0.61Ba0.39Nb2O6 crystals were grown by the Czochralski method. The temperature dependence of dielectric constants was measured experimentally. The peak temperatures in dielectric constants of the doped crystals were detected to be lower by around 7 °C than that of the undoped crystal. Doping also results in the dispersion of ferroelectric phase transition due to the more disordered structure. Nonisoelectronic substitution of doping ions and lattice deformation are discussed by taking some properties of doping ion into account, such as radius, charge status, polarization, and concentration. The influences of the doping ions on the dielectric behaviors are also discussed. In Ce and Co double-doped crystals, the interaction between the two doping ions results in the compensation of the extra charges and counteraction of the structure deformation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1363686
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  • 6
    Electronic Resource
    Electronic Resource
    Au acceptor levels in Si under pressure (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2599-2602 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The hydrostatic pressure coefficient of Au acceptor levels ET in Si was measured by transient capacitance method. Under the pressure range of 0–8 kbar, the pressure coefficient ∂(Ec−ET)/∂P=−1.9 meV/kbar. The electron capture cross section of Au acceptor centers is independent of pressure within experimental accuracy. For defect levels with defect potential of Td symmetry, the uniaxial stress coefficient ∂(E¯c−E¯T)/∂F is isotropic and equal to one-third of corresponding hydrostatic pressure coefficient. By comparing the present result of hydrostatic pressure coefficient with the uniaxial stress coefficient reported by X. C. Yau, G. G. Qin, S. R. Zeng, and M. H. Yuan [Acta Phys. Sin. 33, 377 (1984)], one concludes that the defect potential is far from Td symmetry. Therefore, the Au acceptor levels are unlikely to have been originated by simple gold substitutional or interstitial configuration in Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335889
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  • 7
    Electronic Resource
    Electronic Resource
    Dielectric constant measurement of thin films by differential time-domain spectroscopy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3221-3223 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a theoretical model and preliminary experimental results on the dielectric constant measurement of thin films by using differential time-domain spectroscopy. This technique greatly reduces the minimum measurable thickness, and it promises the dielectric constant measurement of μm-thick thin films with the frequency range from GHz to THz. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126587
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  • 8
    Electronic Resource
    Electronic Resource
    Correlation between interface traps and gate oxide leakage current in the direct tunneling regime (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 379-381 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Our experiment shows that when the gate oxide thickness is scaled to direct tunneling regime, the gate leakage current, and the number of interface traps increase in a discrete manner rather than in a gradual increment. A direct correlation between the increments of the gate leakage current and interface traps, irrespective of stressing polarity, is also observed. The discrete increase in gate current is due to degradation at localized spots rather than a uniform degradation over the entire gate area. The increment is also observed over a wide voltage range unlike interface-trap-assisted tunneling previously reported which occurs mainly near the flat-band voltage. A possible mechanism is proposed based on the observations. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1492011
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  • 9
    Electronic Resource
    Electronic Resource
    Possible giant magnetoelectric effect of ferromagnetic rare-earth–iron-alloys-filled ferroelectric polymers (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2527-2529 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Coupled magnetic–mechanical–electric effects in a composite with ferromagnetic rare-earth–iron alloys (e.g., Tb1−xDyxFe2) filled in ferroelectric polymers [e.g, poly(vinylidene-fluoride–trifluoroethylene) copolymer] are studied by using the Green's function technique. Numerical results suggest a possible giant linear magnetoelectric effect in the ferroic polymer–matrix composite, which is markedly larger than that in the best-known magnetoelectric materials. In addition, the mechanically flexible composite exhibits large magnetostriction. The present results may stimulate further interest in the area of magnetoelectric materials for technological applications. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367293
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  • 10
    Electronic Resource
    Electronic Resource
    A new N-nitroso compound, N-(2-methylpropyl)-N-(1-methylacetonyl)nitrosamine in moldy millet and wheat flour (1986)
    s.l. : American Chemical Society
    Journal of agricultural and food chemistry 34 (1986), S. 628-632 
    Details
    ISSN: 1520-5118
    Source: ACS Legacy Archives
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jf00070a010
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