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  • 2000-2004  (119)
  • 1985-1989  (77)
  • 1975-1979  (88)
  • 1965-1969  (40)
  • 1935-1939  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 31 (1966), S. 2698-2699 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 31 (1966), S. 3439-3440 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 91 (1969), S. 7768-7768 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 33 (1968), S. 2918-2924 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 430-432 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the saturation of optical absorption in GaSb at wavelengths close to the band gap, and have determined the nonlinear absorption (α2) and refraction (n2) coefficients. At liquid-helium temperature a sharp free-exciton absorption line is observed which saturates with increasing incident laser intensity; we obtain values ||α2||=70 cm W−1 and ||n2||≈0.2 cm2 kW−1. At room temperature we do not observe a well-defined exciton; saturation of the residual interband absorption occurs at much higher intensity, and it is found to be obscured by strong thermal effects.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 590-592 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the diffusion and trapping of photoexcited hot carriers in an InGaAs/InP heterostructure using an optical time-of-fight technique with picosecond time resolution. The ambipolar diffusivity is found to decrease by an order of magnitude between 4 K and room temperature, and the efficiency of trapping of carriers into the well increases rapidly in the same temperature range. A mean trapping time of 4 ps is measured for a 50 A(ring) well.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 493-495 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of electric field induced exciton energy shifts and photoluminescence quenching in GaInAs/InP multiple quantum wells. We have measured both the photocurrent and photoluminescence spectra from 100 A(ring) wells contained with p+- and n+-InP layers in a conventional p-i-n structure; reverse bias voltages of up to 12 V were applied. The exciton peaks in the photocurrent spectrum are seen to broaden and shift to lower energy; the photoluminescence peak, which is due to n=1 excitonic and free-carrier recombination, also shifts to lower energy and is completely quenched at high voltages. These results are similar to those reported previously for GaAs quantum wells and ascribed to the quantum-confined Stark effect.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2825-2834 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A multichannel far-infrared interferometer used on the Joint European Torus (JET) is described. The light source is a 195-μm DCN laser. The instrument is of the Mach–Zehnder type, with a heterodyne detection system. The modulation frequency (100 kHz) is produced by diffraction from a rotating grating. There are six vertical and two oblique channels. The latter rely on retroreflection from mirrors mounted on the vessel wall. Their vibration is compensated by a second wavelength interferometer at 118.8 μm. The various subsystems are described, with emphasis on features necessitated by (a) large path lengths, (b) remote handling requirements, (c) fluctuations in atmospheric humidity, and (d) unmanned automatic operation. Typical measurements, along with real-time and off-line data analysis, are presented. The phase-shift measurement is made with an accuracy of (1)/(20) of a fringe, corresponding to a line-integrated electron density of 5×1017 m−2. Comparison with other electron density diagnostics are shown. The introduction of additional optics allows measurements of the Faraday effect and a determination of the poloidal magnetic field distribution. The signal processing and data analysis are described. Errors introduced by the calibration procedure, birefringence of the probing beams, toroidal field pickup, the flux geometry, and the density profile are considered. The Faraday angle is measured with an accuracy of 5% and a time resolution of 1–10 ms. The poloidal magnetic field is deduced with an accuracy of ±15%.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3434-3436 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A way of analyzing the data in a variable stripe length method gain experiment is presented. We confirm that the stripe length dependence of the gain in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells is caused by the change of the chemical potential along the excited stripe due to the interaction of the carrier and photon densities, and the gain threshold density is estimated. A trial function assuming a Lorentzian line shape for the stripe length dependence of the gain is compared with the edge emission intensity as a function of the stripe length. This is found to fit very well with our data, even beyond the saturation region. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1097-1099 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present spectrally resolved and time-integrated four-wave mixing measurements at coherent dynamics of bound excitons in a high-quality GaN epilayer. Coherent excitation, with co-circular polarized light, of the neutral donor-bound excitons (D 0X) and A excitons (XA) results in quantum beats, corresponding to the energy splitting between D 0X and XA. The temperature-dependent dephasing rate is used to deduce the strength of the D 0X-acoustic–phonon interaction via the homogeneous linewidth. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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