Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
56 (1990), S. 1037-1039
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report an investigation of trapped positive charge in as-fabricated plasma-enhanced chemical vapor deposited SiO2 films using electrical and spin resonance techniques. We show that the positive charge results from donor-like "slow'' interface states ("anomalous positive charge'') rather than trapped holes, and that most (∼95%) of the positive charge is not related to E' centers. The positive charge is similar to that seen in electron-injected thermally grown SiO2, and unlike radiation-induced trapped holes.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.103327
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