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  • American Institute of Physics (AIP)  (10)
  • 2000-2004  (2)
  • 1990-1994  (8)
  • 1965-1969
  • 1940-1944
  • 1935-1939
  • 1
    Electronic Resource
    Electronic Resource
    Linear and nonlinear photoconductivity from charge-producing defects in CaF2 (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2313-2321 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature measurements of linear and nonlinear photoconductivity in CaF2 containing trace amounts of yttrium, lanthanum, and several rare earths are reported and discussed. Linear spectral photoconductivity scans taken over the 1.55- to 6.20-eV range of photon energies produced significant photocurrents above 3 eV. The results are explained in terms of a combination of 4f-5d absorption in Ce+3 and Pr+3 and photoionization of interstitial F− in both nearest-neighbor charge-compensating defects and anion-Frenkel defects. Peak photocurrents induced by focused 950-ns-wide pulses from a 496.5-nm wavelength dye laser increased nonlinearly with increasing laser pulse energy. These results are interpreted as a transition from two-photon conductivity to electron avalanche and the asymptotic approach to the material's laser damage threshold at approximately 27 GW/cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349426
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator P-channel metal–oxide–semiconductor field-effect transistors (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 420-426 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFETs) were characterized. A simple method was demonstrated for the fabrication of fully depleted thin-film SOI MOSFETs with a single stacking fault in their channel region. SOI islands were created using selective epitaxial growth/epitaxial lateral overgrowth technology. The influence of a single stacking fault on device I–V characteristics was determined and compared to that of nearby identical devices without stacking faults. Off-state leakage currents, a threshold voltage shift, and drive current lowering were observed for devices with a single stacking fault in their channel region. Based on the location of the single stacking fault relative to the device channel region, various physical models were proposed to explain the phenomena observed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1417995
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  • 3
    Electronic Resource
    Electronic Resource
    A limited closure relation for anisotropic plasmas from the Earth's magnetosheathf| (1994)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 1 (1994), S. 1676-1683 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ions of the terrestrial magnetosheath are typically observed to have bi-Maxwellian velocity distributions with T⊥(approximately-greater-than)T(parallel), where ⊥ and (parallel) denote directions perpendicular and parallel to the background magnetic field. Observations of the highly compressed magnetosheath have demonstrated an inverse correlation between the proton temperature anisotropy and the proton parallel β. Hybrid computer simulations have shown that wave–particle scattering by the proton cyclotron anisotropy instability can yield similar correlations between these two parameters. Although these correlations are due to nonlinear plasma processes, they correspond to a threshold of this instability that can be determined from linear Vlasov theory. This proton anisotropy/β correlation represents a limited closure relation for anisotropic magnetohydrodynamic plasma models.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.870670
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  • 4
    Electronic Resource
    Electronic Resource
    Photoluminescence of plasma polymerized methyl methacrylate films (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1582-1584 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence properties of plasma polymerized methyl methacrylate films are investigated. The photoluminescence is a fluorescence rather than a phosphorescence process with a lifetime on the order of a few nanoseconds. The photoluminescence is a one-photon volume effect. The wavelength span of the photoluminescence using suitable UV excitation can reach over 300 nm with a FWHM exceeding 200 nm. These photoluminescent films may find potential applications in wavelength transformers for solar cells or as a gain medium for tunable solid-state dye lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108645
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  • 5
    Electronic Resource
    Electronic Resource
    X rays in electron-cyclotron-resonance processing plasmas (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2856-2858 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron-cyclotron-resonance processing plasmas have been shown to produce low-energy x rays. X radiation was detected in nitrogen and CF4 plasmas from energies of 1–17 keV for microwave powers up to 1000 W. The x-ray flux decreased with increasing pressure over the range of 0.5–3.5 mTorr. Temperatures of the hot electrons responsible for creating the x rays were estimated from the slopes of the x-ray spectra and decreased with increasing pressure. The measured x-ray flux decreased substantially when the magnetic field configuration was changed. Measurable x radiation is produced whenever a field line that passes through the cyclotron resonance surface intersects the vacuum chamber walls and/or other solid surfaces inside the source chamber.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106846
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  • 6
    Electronic Resource
    Electronic Resource
    Hard x-ray phase zone plate fabricated by lithographic techniques (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1877-1879 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Fresnel phase zone plate with an unprecedented focusing efficiency of 33% was fabricated using an x-ray lithographic technique and was tested using synchrotron x rays. Contributions by the zeroth-order x ray to the focus were minimal. Spatial resolution in the micrometer range was achieved. The measured spot size was dominated by geometric demagnification of the source. It should be possible to obtain submicrometer resolution by aperturing the source. Experimental results of focusing efficiency measurements, intensity distribution at the focal plane, and spatial resolution tests are reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108400
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  • 7
    Electronic Resource
    Electronic Resource
    Fully planar method for creating adjacent "self-isolating'' silicon-on-insulator and epitaxial layers by epitaxial lateral overgrowth (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 483-485 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel and simple process is demonstrated for creating isolated silicon-on-insulator (SOI) tubs adjacent to selective epitaxial substrate layers. The process results in a fully planar wafer surface which is uniquely suited for mixed bipolar/complementary metal-oxide-semiconductor device fabrication. Low-temperature epitaxial lateral overgrowth (ELO) using SiH2Cl2/HCl/H2 is carried out in a reduced-pressure chemical vapor deposition reactor to create SOI islands in thermally grown SiO2 valleys. SOI islands and epitaxial seed regions are "self-isolated'' by chemical-mechanical planarization. The as-grown ELO is single-crystal material with well-defined facets. Planarized SOI and epilayer regions have planar, featureless surfaces. Defect etching for the nonoptimized SOI layers indicates about 5×104 stacking faults/cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106643
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  • 8
    Electronic Resource
    Electronic Resource
    Effects of deposition parameters on the refractive index in plasma polymerized methyl methacrylate thin films (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2595-2597 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma polymerization can be used to deposit thin films whose properties significantly differ from those of conventionally synthesized linear or cross-linked polymers. We investigate the plasma polymerization of methyl methacrylate for use in microelectronic and photonic applications. The deposition system is a 13.56 MHz parallel plate reactor. The effects of varying rf power and neutral pressure on deposition rate and refractive index in the visible are examined. It is found that the deposition rate can be varied from 50–500 A(ring)/min over a pressure range of 40–300 mT. In addition, the refractive index can be varied from 1.5 to 1.6 in the visible by varying the rf power from 10 to 50 W. Possible applications in photonics include smoothly varying graded index and multilayer structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106920
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  • 9
    Electronic Resource
    Electronic Resource
    Morphology of plasma polymerized methyl methacrylate films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 560-562 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface morphology of plasma polymerized methyl methacrylate films was investigated using atomic force microscopy. It was found that the plasma polymer surfaces consist of nanometer scale growth columns. The average grain size of the growth columns increases with deposition time. For the same deposition time, the average grain size is proportional to pressure and deposition power. It was deduced that microscopic properties of plasma polymers are not uniform through the bulk of the plasma polymer films even though the external deposition parameters are held constant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111103
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  • 10
    Electronic Resource
    Electronic Resource
    Unique method to electrically characterize a single stacking fault in silicon-on-insulator metal–oxide–semiconductor field-effect transistors (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4034-4036 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A unique and simple method is demonstrated for characterizing the electrical behavior of a single stacking fault in thin-film fully depleted silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFETs). SOI islands were created using selective epitaxial growth/epitaxial lateral overgrowth technology. P-channel MOSFETs, with the presence of a single stacking fault entirely in the channel region, were measured. The influence of a single stacking fault on device current–voltage characteristics was determined and compared to that of nearby identical devices without stacking faults. It was found that the threshold voltage increased and saturation current decreased, but had low subthreshold leakages. P-channel MOSFETs, with a single stacking fault crossing the gate and penetrating into the source and drain, had high subthreshold leakage currents. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1331641
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