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  • 1
    Electronic Resource
    Electronic Resource
    InAs quantum-well-base InAs/GaSb hot-electron transistors (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4454-4456 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Narrow InAs-base GaSb/InAs hot-electron transistors have been grown by low-pressure metalorganic chemical vapor deposition. The InAs bases are 30, 50, and 100 A(ring) thick. The ground-state electron subband energy E0 is determined from values of collector current. For thinner wells, values of E0 are well explained by a simple effective mass calculation. Here, a mixing of InAs conduction-band states with GaSb valence-band states is neglected because of symmetry mismatch. The effect of nonparabolicity of the InAs conduction band is taken into account.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348378
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  • 2
    Electronic Resource
    Electronic Resource
    Band lineup for a GaInP/GaAs heterojunction measured by a high-gain Npn heterojunction bipolar transistor grown by metalorganic chemical vapor deposition (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4898-4902 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaInP(N)/GaAs( p) heterojunction bipolar transistor was fabricated by metalorganic chemical vapor deposition (MOCVD) for the first time. The common-emitter current gain exceeded 200 at a current density around 10 A/cm2 and the offset voltage was as small as 50 mV. Thermionic emission theory indicates that the conduction-band discontinuity (ΔEc) at GaInP/GaAs heterointerface is as small as 30 meV at room temperature and this value was more than 160 meV smaller than 0.19–0.22 eV obtained by the C-V profile method. The band-gap energy for MOCVD-grown GaInP was 60 meV smaller than the intrinsic band-gap energy (1.91 eV), but this value is too small to explain the difference between the present ΔEc value and the previously reported ΔEc value.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343205
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  • 3
    Electronic Resource
    Electronic Resource
    Optical properties of quantum wells with ultrathin-layer superlattice barriers (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2503-2506 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single quantum wells of GaAs with barriers of (AlAs)2(GaAs)2 ultrathin-layer superlattices have been fabricated and photoluminescence measurement was performed. The photoluminescence energy was found to change almost linearly against the well width and the photoluminescence linewidth to get smaller with decreasing well width, which is in marked contrast to the case of a usual alloy-barriered single quantum well. It is indicated that the effective energy gap of the ultrathin-layer superlattice barrier decreases with the decreasing well width in such a structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336996
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  • 4
    Electronic Resource
    Electronic Resource
    High electron mobility in the selectively doped heterostructures grown by normal pressure metalorganic chemical vapor deposition (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 334-337 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs/AlGaAs heterostructure selectively doped with Si was grown in a conventional normal pressure metalorganic chemical vapor deposition using trimethyl metals and arsine. Mobility of the two-dimensional electron gas as high as 8100, 148 000, and 401 000 cm2/V s was obtained at 300, 77, and 5 K, respectively, for a sample with an undoped Al0.3Ga0.7As spacer layer of 100 A(ring) and with a sheet electron density of about 5×1011 cm−2. The heterostructure with the spacer layer thinner than 100 A(ring) shows high mobility comparable to the best values obtained by molecular-beam epitaxy. The influence of growth parameters on the electron mobility in the heterostructure is described in detail.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337648
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  • 5
    Electronic Resource
    Electronic Resource
    Thermionic emission of Γ and L electrons in the GaSb/InAs hot-electron transistors (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1714-1716 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated GaSb/InAs hot-electron transistors with base widths of 30 to 200 A(ring). The barrier height of thermionic emission was evaluated with two techniques; deducing from values of collector current density itself, and from its temperature dependence. The difference between the two results reveals that electrons are emitted from both Γ and L valleys of the GaSb conduction band. From the measured barrier height, the energy of the ground quantum level formed in InAs base was also deduced. Its dependence on the base width was compared with simple calculation where nonparabolicity of the InAs conduction band was considered. It indicates electron density in the InAs base is enhanced due to electron's transfer from GaSb to InAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106227
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  • 6
    Electronic Resource
    Electronic Resource
    Role of multi-step processes in 16O(11B,12C)15N at 41.25 MeV (2000)
    Springer
    The European physical journal 9 (2000), S. 213-220 
    Details
    ISSN: 1434-601X
    Keywords: PACS. 25.70.Hi Transfer reactions – 24.70.+s Polarization phenomena in reactions – 24.10.Eq Coupled-channel and distorted-wave models
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: The 16O(11B,12C)15N reaction at 41.25 MeV has been investigated using the kinematical coincidence method. Polarization tensors t20 and t40 of 12C[2+ 1] for the quantization axis taken along the direction of propagation have been measured at center-of-mass angles (Θc.m.) between 48° and 62° by analyzing the energy spectrum of 12C[2+ 1] modulated by the effect of γ-ray emission. The cross-sections of the transfer reactions leading to the 12C[g.s.]+15N[g.s.], 12C[2+ 1]+15N[g.s.] and 12C[g.s.]+15N[3/2- 1] final states have also been measured in the range 48°≤Θc.m.≤ 120°. The polarization tensor terms of 12C[2+ 1] largely deviating from zero have been observed, contrary to the prediction by the distorted-wave Born approximation (DWBA). The one-step DWBA calculation also fails in describing the transfer reaction cross-sections. It is shown that the coupled channel model calculation including excitations and reorientations in 11B and 12C satisfactorily reproduces both the tensor terms and the cross-sections of the transfer reactions. The multi-step processes passing through the excited states of 11B are found to significantly contribute to the reaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s100500070040
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  • 7
    Electronic Resource
    Electronic Resource
    Nucleation Process of Voids and Other Vacancy Clusters in some Metals and Alloys (1987)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 15-18 (Jan. 1987), p. 809-828 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/00/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.15-18.809.pdf
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  • 8
    Electronic Resource
    Electronic Resource
    Vacancies in B2 Type Ordered Alloys and Diffusion Mechanism (1987)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 15-18 (Jan. 1987), p. 1317-1322 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/00/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.15-18.1317.pdf
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  • 9
    Electronic Resource
    Electronic Resource
    Structural instabilities and superconductivity in La-214 compounds (1994)
    Springer
    Journal of superconductivity 7 (1994), S. 39-43 
    Details
    ISSN: 1572-9605
    Keywords: Low-temperature tetragonal (TLT) phase ; 1/8 problem ; La2−y−x Th y Ba x CuO4 ; La2−y−x Nd y Ba x CuO4 ; La2−x (Ba, Sr, Ca) x ,CuO4
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract In La2−x Ba x CuO4 (LBCO) the transition to a low-temperature tetragonal phase and the suppression of superconductivity occur at the carrier concentration p≈ 1/8 per copper. We will discuss the roles of various material parameters that control this instability. An unusual lattice softening has been found by ultrasonic measurement on La2−x Sr x CuO4 (LSCO). This softening is present only in an in-plane shearing mode and is ascribed to the growth of structural fluctuations in the normal state. These phenomena are closely related because both the structural change in LBCO and the applied strain in LSCO lift the degeneracy of in-plane oxygen sites. They clarify the importance of strong coupling between the normal-state electronic system and the lattice by a Peierls-type mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00730365
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  • 10
    Electronic Resource
    Electronic Resource
    Tensor polarization of 12C[2+ 1] in the 16O(13C,12C)17O reaction at 50 MeV (2000)
    Springer
    The European physical journal 7 (2000), S. 491-502 
    Details
    ISSN: 1434-601X
    Keywords: PACS:25.70.Hi Transfer reactions – 24.70.+s Polarization phenomena in reactions – 24.10.Eq Coupled-channel and distorted-wave models
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: The 16O(13C,12C)17O reaction at 50 MeV has been investigated using the kinematical coincidence method. Polarization tensors t 20 and t 40 of 12C[2+ 1] for the quantization axis taken along the direction of propagation have been measured by analyzing the energy spectrum of 12C[2+ 1], modulated by the effect of γ ray emission. The deduced t 40 values significantly deviate from zero, contrary to the prediction of the distorted-wave Born approximation theory based on one-step p shell neutron stripping without spin-dependent interactions. The phenomenological spin–orbit interaction necessary to reproduce the magnitude of measured t 40 is found to be much larger than the folding model prediction. It is shown that the experimental polarization tensors as well as the cross sections can be reproduced by introducing multi-step processes involving excitations in 12C and 13C without introducing spin-dependent interactions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/PL00013650
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