ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 2000-2004  (815)
  • 1995-1999  (472)
Collection
Years
Year
  • 1
    Call number: S 99.0139(240)
    In: Wissenschaftliche Arbeiten der Fachrichtung Vermessungswesen der Universität Hannover
    Type of Medium: Series available for loan
    Pages: x, 157 S.
    Series Statement: Wissenschaftliche Arbeiten der Fachrichtung Vermessungswesen der Universität Hannover 240
    Classification:
    Measurement
    Location: Lower compact magazine
    Branch Library: GFZ Library
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8498-8502 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of high temperature rapid thermal annealing (HT-RTA) using a flat gas flame on the electrical properties of phosphorus-doped polycrystalline silicon (poly-Si) films in association with their microscopic structure were studied. Samples with a phosphorus concentration of 3.1×1017–6.0×1020 cm−3 were prepared and annealed by HT-RTA ranging from 1150 to 1350 °C. During HT-RTA, the sample surface was laterally swept by gas flames. The resistivity of the samples decreased with increasing annealing temperature, and the lowest resistivity was 4.8×10−4 Ω cm for the sample doped with P of 6.0×1020 cm−3 when annealed at 1350 °C. Hall mobility, on the other hand, increased first and then decreased with increasing P concentration. The highest Hall mobility was 71.3 cm2/V s for the sample annealed at 1350 °C of which the P concentration was 3.5×1019 cm−3. The results suggest that the grain boundary potential barriers for carriers decreased with increasing doping concentration and annealing temperature, and that the total area of grain boundaries in the films decreased with increasing annealing temperature because of secondary grain growth and the shrinkage of boundary width. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1459-1464 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of gas flame annealing on the structure of polycrystalline Si films was studied using transmission electron microscopy and electron spin resonance. This annealing technique involved heating the sample surface to more than 1100 °C using flat gas flames with a scan rate of 1 mm/s and a heating rate of about 260 °C/min. Electron microscopy images revealed that the secondary grain growth proceeded with increasing the number of annealing times (annealing frequency) and that the grain size for samples annealed at 1360 °C was more than 1 μm whereas secondary grain growth was not significant for samples annealed at 1150 °C. Further, it was found that the spin density in the samples annealed at 1360 °C decreased from 1.5×1018 cm−3 to 3.8×1017 cm−3. It was concluded from the spin resonance results and the electron microscopy images that the secondary grain growth consists of two processes, the initial structural rearrangement of the grain boundaries and the subsequent grain growth. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 8588-8594 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The three-dimensional Schrödinger and Poisson's equations are used to calculate the conduction band profile, energy levels, and Fermi energy of negatively charged semiconductor quantum dots. The calculation is carried out self-consistently within the frame of the finite-difference method. Assuming the effective mass of the proton at the semiconductor–electrolyte interface, we found the conduction band profile for the spherical ZnO quantum dots dispersed as aqueous colloids very similar to the conduction band profile of symmetric modulation-doped semiconductor quantum wells. The energy levels and Fermi energy of the spherical ZnO quantum dots are obtained as a function of the band offset at the semiconductor–electrolyte interface. A comparison of the energy levels for negatively charged and uncharged quantum dots is used as an alternative explanation of the observed reversible blue shift in the absorption spectrum of semiconductor colloids under illumination. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    ISSN: 1520-6041
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Organometallics 14 (1995), S. 2238-2245 
    ISSN: 1520-6041
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 3380-3385 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new octopole electrode design improves the particle trapping stability of an electrodynamic balance (EDB) and allows one to make three-dimensional force measurements on a trapped particle. A conventional double-ring EDB was modified by splitting each ring into four equal segments that are electrically independent. Three dc sources were combined such that eight potentials were applied to the eight segments of the electrodes. An additional ac voltage was superimposed on each ring segment as in a conventional double-ring EDB. The resulting electric field has dc components in the x, y, and z directions, which can be controlled independently by the three dc supplies. The z component is used to balance and measure vertical forces such as gravity, radiation pressure, or phoretic forces. The x and y fields can be used to suppress lateral oscillations of the trapped particles, and lateral forces on the particle can be measured in terms of the x and y dc voltages. The apparatus and the electric fields are described herein, and the operation of the device is demonstrated for spheres and aggregated particles. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2641-2648 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of CoSi2 by solid state reaction of Co/a-Si/Ti/Si(100) is investigated. A Ti/a-Si composite interlayer is used to modify the diffusion barrier and influence the epitaxial growth process. The epitaxial quality of the CoSi2 is improved compared to the film grown by Co/Ti/Si reaction. A multielement amorphous layer is formed by a solid-state amorphization reaction at the initial stage of the multilayer reaction. This layer acts as a diffusion barrier, which controls the atomic interdiffusion of Co and Si while limiting the supply of Co atoms. CoSi2 grows as the first phase and the growth interface of the epitaxial CoSi2 is at both the CoSi2/Si and CoSi2/CoSi interfaces. Investigation of the growth kinetics shows that the activation energy of CoSi2 formation is larger than that without an amorphous Si layer. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1235-1244 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A pulsed excimer laser was used to evaporate targets of boron nitride and titanium nitride in an attempt to produce hard thin films on crystalline silicon substrates. The films were either pure TiN or BN layers, as well as alternating multilayers and mixed layers. Deposition could be assisted by ion bombardment. The films were characterized by Auger electron spectroscopy, Fourier transform infrared spectroscopy (FTIR), and x-ray diffraction. A selection of films was also studied by profilometry in order to determine deposition rate and the type of stress present. The level of stress in TiN films was also a function of the deposition temperature and could be varied with the use of ion bombardment. Amorphous, cubic, and hexagonal BN films were produced and the effect of the stress of the substrate on these layers was investigated. Multilayers were stressed, having alternating layers of nanocrystalline TiN and amorphous BN. Mixtures consisted of nanometer-sized regions of crystalline TiN and sp2 coordinated boron nitride. FTIR spectra and high-resolution transmission electron microscope pictures suggested that in the mixtures, boron nitride planes tended to parallel the surface of the TiN grains. No sign of stress-driven formation of cubic BN was observed in the multilayers nor in the nanosized mixtures, regardless of the stress level present in them; neither was there any sign of titanium borides or other structures that might increase the hardness of the films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 117 (2002), S. 2592-2598 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Results of the QCICD/6-311++G(3df,3pd) ab initio calculations on the ground state of Ar2H+ are presented. With accurate method and basis sets, the potential energy surface for the ground state was scanned with more than 7000 points, and an analytic global potential energy surface was constructed based on these points. The properties such as the potential minima, the transition state, and the dissociating paths of [Ar–H–Ar]+ were discussed. The influence of the three-body interaction in this system was also investigated, and it is found that a potential based on the two-body additive interaction is not good to represent the Ar2H+ system. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...