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  • American Institute of Physics (AIP)  (4)
  • 2000-2004  (3)
  • 1995-1999  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Temperature dependence of optical and electronic properties of moderately doped silicon at terahertz frequencies (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 837-842 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Complex conductivity of moderately P-doped silicon wafers (1.1±0.2 Ω cm at room temperature) has been measured by using a terahertz (THz) time-domain spectroscopy for the temperature and frequency ranges of 20–300 K and 0.2–1.1 THz, respectively. The strong frequency dependence of the complex conductivity due to the free carriers in the THz region is observed and it changes rapidly with temperature, which is interpreted in terms of the increase in mobility and freezing of the free carrier as analyzed by using the simple Drude model. The experimental data deviate slightly from the simple Drude model at low temperatures and becomes apparent with decreasing temperature. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1376673
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  • 2
    Electronic Resource
    Electronic Resource
    Strain-imaging observation of the polarization freezing of the domains under the electrode of a Pb(Zr, Ti)O3 film (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3126-3128 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strain imaging is used to measure and image piezoelectric properties by detecting electric-field-induced strains using a scanning probe microscope. In this letter, we present ferroelectric domain imaging under an electrode in a lead-zirconate-titanate (PZT) film. The imaging has been achieved by detecting the surface force modulation caused by the electrode displacements. Observation through the electrode suppresses the effect of space charges and enables us to investigate the PZT film in the same situation in devices. We observed the freezing of polarization of a PZT film deoxidized by atomic hydrogen produced by catalysis of platinum upper electrodes due to hydrogen annealing. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125252
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  • 3
    Electronic Resource
    Electronic Resource
    Imaging of defect-related charges in a Pb(Zr, Ti)O3 film (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 664-666 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter presents results on imaging of charges causing the freezing of spontaneous polarization in a hydrogen-annealed lead–zirconate–titanate (PZT) film with platinum electrodes. It has been reported that the positive charges, produced by deoxidization of the PZT at the boundary with the platinum upper electrodes due to hydrogen annealing, fixed spontaneous polarization downward and thus greatly degraded remanent polarization. To date, such defect-related charges could not be observed directly. Imaging after removing the upper electrodes shows that the charges are located at the grain boundaries of the PZT and the charge density in the degraded region is much higher than that in the other region. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1343496
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  • 4
    Electronic Resource
    Electronic Resource
    Measurement of optical properties of highly doped silicon by terahertz time domain reflection spectroscopy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3923-3925 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical properties of doped silicon wafers have been measured by means of terahertz time domain reflection spectroscopy. A method is proposed to obtain the relative phase by reflection accurately. By using this method, the relative phase is obtained within an error of less than 10 mrad at 1 THz. The experimentally obtained complex conductivity of relatively high-doped silicon (ρ=0.136 Ω cm) in the terahertz region agrees with the simple Drude model. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1413498
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