ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Thin films (∼0.43 and ∼0.95 μm thick) of YBa2Cu3O7−δ on (100) LaAlO3 substrates have been implanted with 800 keV Ag+ to a dose of 5×1014/cm2, at room temperature (i.e., the total range (approximate)0.4 μm and the damage level (approximate)3.1 displacements per atom) and at elevated temperatures (450, 650, and 780 °C), followed by an in situ annealing schedule in flowing oxygen ambient. We have found that the implantation at room temperature amorphizes the implanted layer. In such a case, the implanted layer cannot regrow to the superconducting phase if there is no crystal seed remaining in the bottom of the film, whereas implantation at elevated temperatures plus an in situ annealing schedule, including a step at 870 °C in flowing oxygen ambient, can maintain the crystal structure and superconductivity of the films. For the thicker film, we have found that after the implantation at 450 or 650 °C and the in situ annealing, the total volume of the film has recovered to the superconducting 123 phase with a Tc=89 K. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.118739
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