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  • Articles  (77)
  • American Chemical Society  (63)
  • American Institute of Physics (AIP)  (14)
  • 2000-2004  (23)
  • 1995-1999  (52)
  • 1935-1939  (2)
Collection
  • Articles  (77)
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Year
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 10 (1998), S. 2298-2314 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results from large eddy simulations (LES) and direct numerical simulations (DNS) of a two-dimensional, spatially developing, compressible planar free jet undergoing an idealized, exothermic, chemical reaction of the type F+rOx→(1+r)P are presented in order to assess several subgrid-scale (SGS) combustion models. Both a priori and a posteriori assessments are conducted. The SGS turbulence model used is the dynamic Smagorinsky model (DSM). Two classes of SGS combustion models are employed in this study. These include the conserved scalar approach and the direct closure approach. Specifically, the SGS combustion models involve several forms of direct filtered reaction rate closures, including a scale similarity filtered reaction rate model (SSFRRM), and a mixing controlled strained laminar flamelet model (SLFM) in the form of thermochemical state relationships, obtained from the DNS, and two assumed forms for the subgrid mixture fraction filtered density function (FDF). In general, LES results are in reasonable agreement with DNS results and highlight the performance of the various SGS combustion models. In particular, in the context of the present study, it is found that: (1) the SLFM cases overpredict product formation due to their inability to capture finite-rate chemistry effects; (2) due to the relatively low values of the SGS mixture fraction variance in the flow under study, the SLFM results are not sensitive to the form of the assumed FDF; and (3) in comparison to the other models investigated, the SSFRRM combustion model provides the best agreement with the DNS for product formation. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3312-3317 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study picosecond carrier transport dynamics induced by 200 fs 1.55 μm optical pulses in charge injection transistor structures. We propose and demonstrate a new optoelectronic method for exploring the interactions of hot majority carriers and cold minority carriers, as well as the optical control of real space transfer in these devices. The minority holes photogenerated in the channel produce substantial cooling of the hot-electron majority carriers and lead to the reduction of the real space transfer. The new method also provides a direct measure of the minority carrier lifetime in the transistor channel. These effects are demonstrated in InGaAs-channel devices with both InAlAs and InP barriers. The similarities in the device characteristics are explained in terms of the interaction of photogenerated minority holes with majority electrons in the channel leading to a photoconductor-like drain current and to a reduction in the real space transfer collector current. The differences are attributed to the different conduction and valence band energy offsets between the wide band gap barrier and the low band gap collector and channel layers. Furthermore, the InAlAs-barrier device shows a capability of serving as a practical photodetector with the measured, system-limited recovery speed of ∼5 ps. © 1996 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5857-5858 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This reply reinforces the need for examining the internal consistency of longitudinal and lateral stress data under plane shock wave propagation. This was pointed out in an article by Dandekar, Abbate, and Frankel [J. Appl. Phys. 76, 4077 (1994)] to determine the shear strength of a solid. It also shows that shear strength of a crystalline solid under plane shock wave compression can be determined accurately from its reliable Hugoniot and applicable hydrodynamic compression of the solid.
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  • 4
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1278-1280 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Simple photoconductive optical detectors for 1.55 μm wavelength have been fabricated on InGaAsP grown by He-plasma assisted molecular beam epitaxy. Characterization of the photodetectors shows that their speed is determined by the free carrier trapping time, with a full width at half-maximum impulse response of approximately 6 ps. © 1998 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1560-1562 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have experimentally investigated the ultrafast carrier dynamics in GaAs grown by metal-organic vapor phase epitaxy with an oxygen precursor. Using a time-resolved reflection ellipsometric technique, we measured the carrier-induced refractive and absorptive index changes as a function of oxygen and aluminum doping concentrations. The free carrier trapping time is inversely proportional to the aluminum-oxygen based complex concentration and can be as short as 300 fs. The material is also highly resistive and promises to be an excellent candidate for optoelectronic applications requiring short carrier lifetime and high dark isolation. © 1997 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3423-3425 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have experimentally investigated the carrier lifetime and resistivity versus anneal temperature in InP films grown by He-plasma-assisted molecular beam epitaxy. This material is shown to exhibit picosecond carrier lifetime with high resistivity even after anneal at temperatures up to 700 °C. © 1998 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 12 (2000), S. 589-596 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Numerical simulations of an impulsively started jet were performed in order to investigate the effects of trailing jet instability on axisymmetric vortex ring formation. The predictions were compared to experimental results reported in the literature and to recently published numerical results. The total and vortex ring circulations were found to be in good agreement with both the experimental and the numerical results. The presence of a universal formation time scale was confirmed. The results also highlighted an important interaction between an instability which develops in the trailing jet for large discharge times and the dynamics of the head vortex ring. This interaction accelerates the process by which the vortex ring detaches from the trailing jet and has a significant effect on the vortex ring circulation. © 2000 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 43 (2002), S. 2670-2689 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: A comprehensive study of the symmetric Lévy stable probability density function is presented. This is performed for orders both less than 2, and greater than 2. The latter class of functions are traditionally neglected because of a failure to satisfy non-negativity. The complete asymptotic expansions of the symmetric Lévy stable densities of order greater than 2 are constructed, and shown to exhibit intricate series of transcendentally small terms—asymptotics beyond all orders. It is demonstrated that the symmetric Lévy stable densities of any arbitrary rational order can be written in terms of generalized hypergeometric functions, and a number of new special cases are given representations in terms of special functions. A link is shown between the symmetric Lévy stable density of order 4, and Pearcey's integral, which is used widely in problems of optical diffraction and wave propagation. This suggests the existence of applications for the symmetric Lévy stable densities of order greater than 2, despite their failure to define a probability density function. © 2002 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 42 (2001), S. 1860-1868 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The complete asymptotic expansions, that is to say expansions which include any exponentially small terms lying beyond all orders of the asymptotic power series, are calculated for the Fermi–Dirac integrals. We present two methods to accomplish this, the first in the complex plane utilizing Mellin transforms and Hankel's representation of the gamma function, and the second on the real line using the known asymptotic expansions of the confluent hypergeometric functions. The complete expansions of Fp(η) are then used to investigate the effect that these traditionally neglected exponentially small terms have on physical systems. It is shown that for a 2 dimensional nonrelativistic ideal Fermi gas, the subdominant exponentially small series becomes dominant. © 2001 American Institute of Physics.
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