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  • Springer  (126)
  • American Institute of Physics (AIP)  (22)
  • Periodicals Archive Online (PAO)  (11)
  • Cambridge University Press  (8)
  • Geological Society of America (GSA)
  • 2000-2004  (42)
  • 1995-1999  (110)
  • 1950-1954  (8)
  • 1945-1949  (7)
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  • 11
    Electronic Resource
    Electronic Resource
    A near-field optical microscope with normal force distance regulation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3891-3897 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Near-field imaging is a means of exceeding the diffraction limit in optical microscopy to yield subwavelength resolution optical images of a sample surface. In order to achieve such high resolution, it is necessary to scan the measurement probe above the surface at a height of only a few nanometers which requires careful control of the separation between tip and sample. In the implementation of the near-field optical microscope (NFOM) reported here, the distance regulation scheme is based on an inverted noncontact atomic force microscope (AFM) in which a cantilever is used as the sample substrate and imaging is performed with a fiber optic tip. In this way, both the benefits of AFM and NFOM are realized simultaneously. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147289
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  • 12
    Electronic Resource
    Electronic Resource
    In situ x-ray diffraction analysis of the C49–C54 titanium silicide phase transformation in narrow lines (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1732-1734 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transformation of titanium silicide from the C49 to the C54 structure was studied using x-ray diffraction of samples containing arrays of narrow lines of preformed C49 TiSi2. Using a synchrotron x-ray source, diffraction patterns were collected at 1.5–2 °C intervals during sample heating at rates of 3 or 20 °C/s to temperatures of 1000–1100 °C. The results show a monotonic increase in the C54 transition temperature by as much as 180 °C with a decreasing linewidth from 1.0 to 0.1 μm. Also observed is a monotonic increase in (040) preferred orientation of the C54 phase with decreasing linewidth. The results demonstrate the power of in situ x-ray diffraction of narrow line arrays as a tool to study finite size effects in thin-film reactions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113349
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  • 13
    Electronic Resource
    Electronic Resource
    Determination of the cubic to hexagonal fraction in GaN nucleation layers using grazing incidence x-ray scattering (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2972-2974 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent electron diffraction and microscopy studies of GaN nucleation layers have shown that faults in the stacking of the close-packed planes result in the coexistence of cubic and hexagonal phases within the layers. Using grazing incidence x-ray scattering, we have quantified the proportion of the cubic and hexagonal phases throughout the nucleation layer. We compare the structure of a 20 nm nucleation layer grown on sapphire by atmospheric pressure metal-organic chemical vapor deposition at 525 °C to that of an identical layer heated to 1060 °C. The fractions of cubic and hexagonal phases in the layers are determined by a comparison of the scattering data with a Hendricks–Teller model. High temperature exposure results in a decrease of the cubic fraction from 0.56 to 0.17. The good agreement with the Hendricks–Teller model indicates that the positions of the stacking faults are uncorrelated. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121511
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  • 14
    Electronic Resource
    Electronic Resource
    Contrast reversal in scanning capacitance microscopy imaging (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2597-2599 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the quantification properties of scanning capacitance microscopy (SCM) by using two dedicated test structures and highlight the response of SCM to changes in dopant density. Our results indicate that contrast reversal occurs and that the SCM output is not always a monotonically increasing signal with decreasing dopant density. Two epitaxially grown staircase structures covering the doping ranges 1014–1020 cm−3 p type and 5×1014–5×1019 cm−3 n type were produced for this study as the turning point in the response function typically occurs at a doping level of around 1017 cm−3. Through the use of a simple simulation model we see that contrast reversal is expected due to a relative shift between the dC/dV curves for different doping levels. The onset of contrast reversal can be adjusted by changing the dc sample bias leading to a shift in the operating position of the SCM, and the significance of this point will be discussed here. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122517
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  • 15
    Electronic Resource
    Electronic Resource
    In situ x-ray scattering study of PbTiO3 chemical-vapor deposition (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1809-1811 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present in situ surface x-ray scattering measurements of PbTiO3 epitaxy by metal–organic chemical-vapor deposition. Oscillations in crystal truncation rod intensity corresponding to layer-by-layer growth are observed under a variety of growth conditions. At lower PbO overpressures, we observe a transition to step-flow growth and an increased rate of recovery after growth, indicating a higher surface mobility. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1458530
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  • 16
    Electronic Resource
    Electronic Resource
    Selective study of polymer/dielectric interfaces with vibrationally resonant sum frequency generation via thin-film interference (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3084-3086 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique for selective characterization of the structure of free and buried thin-film interfaces by vibrationally resonant sum frequency generation spectroscopy is described. Manipulation of Fresnel coefficients by choice of film thickness on a reflecting substrate allows simultaneous optimization of the signal from the desired interface and minimization of the signal from other interfacial sources. This technique is demonstrated for the free polystyrene (PS)/air and the buried PS/spin-on glass interfaces. Our spectra show that the pendant phenyl group orientation is similar at the buried and free interfaces, with the phenyls pointing away from the bulk PS at each interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1475358
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  • 17
    Electronic Resource
    Electronic Resource
    Erratum: Lifetime of the CH3OH* intermediate in the reaction CH4+O(1D2)→CH3OH*→CH3+OH [J. Chem. Phys. 102, 6946 (1995)] (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 103 (1995), S. 3272-3272 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.470261
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  • 18
    Electronic Resource
    Electronic Resource
    Lifetime of the CH3OH* intermediate in the reaction CH4+O(1D2)→CH3OH*→CH3+OH (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 6946-6948 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Subpicosecond lasers measured the appearance rate of OH X(v=0) following 267 nm photolysis of the CH4⋅O3 van der Waals complex. The rise of the OH A←OH X laser-induced fluorescence with respect to the photolysis/probe delay time, tD, was LIF(tD)=1−exp(−tD/τ) with τ approximately 3 ps, indicating that the reaction CH4+O(1D2)→CH3+OH involves a CH3OH* intermediate with that lifetime. No prompt OH(v=0) from a direct or fast reaction was observed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.469132
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  • 19
    Electronic Resource
    Electronic Resource
    Quantum calculations on the vibrational predissociation of NeBr2: Evidence for continuum resonances (2000)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 2265-2273 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Quantum mechanical calculations on the vibrational predissociation dynamics of NeBr2 in the B electronic state have been performed and the results compared with both experimental data and other computational studies. For vibrational levels with v≤20 we find that the vibrational state dependence of the predissociation lifetimes is in qualitative agreement with experimental measurements, as are the calculated Br2 fragment rotational distributions. For higher vibrational levels, the B←X excitation profiles are well represented by a sum of two Lorentzian line shapes. We attribute this result to the presence of long-lived resonances in the dissociative continuum that are reminiscent of long-lived dissociative trajectories in previous classical studies of NeBr2. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.480791
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  • 20
    Electronic Resource
    Electronic Resource
    Internal surfaces of porous media studied by nuclear magnetic resonance cryoporometry (1998)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 8195-8198 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The filling processes of water and cyclohexane in porous silica (with a characteristic pore size of 60 Å) are investigated using the nuclear magnetic resonance (NMR) technique of cryoporometry. In this technique, the liquid was frozen in the pores before the temperature was raised gradually; melting the smallest particles first and then particles of increased size. The volume of the molten liquid present was measured using the height of a T2 spin echo. The experiments were performed with filling fractions ranging from 10% to 100%. The results showed distinctly different behaviors of the fluids, which depended on the surface adhesion. It was found that water (a fluid which wets the pore surface) forms small puddles—much smaller than the smallest pore size—at low filling fractions. These puddles grow in size as more water is added until all the pore volume is filled. Cyclohexane (a non-wetting fluid) on the other hand, does not form small puddles but completely fills the pores with a preference for the smaller pores. Water is found to give more accurate results for the pore size distribution than cyclohexane, in 60 Å silica. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.476175
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