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  • Elsevier  (359)
  • Institute of Physics  (54)
  • American Institute of Physics (AIP)  (15)
  • 2000-2004  (240)
  • 1995-1999  (188)
  • 1955-1959
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  • 1
    Publication Date: 1999-08-01
    Print ISSN: 0014-3057
    Electronic ISSN: 1873-1945
    Topics: Chemistry and Pharmacology , Physics
    Published by Elsevier
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  • 2
    Publication Date: 2001-05-01
    Print ISSN: 0014-3057
    Electronic ISSN: 1873-1945
    Topics: Chemistry and Pharmacology , Physics
    Published by Elsevier
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7249-7257 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electric field-induced antiferroelectric (AFE) to ferroelectric (FE) phase transition in lead strontium zirconate titanate (PSZT) ceramics was studied by means of dielectric, polarization, and strain hysteresis measurements. PSZT compositions with varying strontium and Zr/Ti ratio, located in the ferroelectric, antiferroelectric phase regions, and near the AFE/FE phase boundary were prepared. Dielectric properties were measured as a function of temperature for different compositions. The electric field required for AFE–FE phase transition and hysteresis were affected by the temperature and composition. The entropy change during phase transition and the field-induced strain were also measured and discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7192-7194 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heavy fermion itinerant antiferromagnetic UNiAl is one of the very few U-containing compounds which absorbs H2/D2 without disproportionation. The present neutron diffraction studies on UNiAlDy (y=2.2) are directed towards resolving controversies with regard to the occupancy of Ni atoms and the associated interstitial sites for (H/D) atoms, as well as the nature of magnetic ordering in the higher hydride phase with y≥2. The fit to the neutron diffraction data is found to improve considerably if the Ni atoms originally lying in the U-atoms' plane in UNiAl get shifted to the Ni–Al atoms' plane in the deuteride. This is in agreement with an earlier neutron diffraction report on a deuteride sample of similar composition [T. Yamamoto et al., J. Alloys Compd. 269, 162 (1998)] and our x-ray structural studies on UNiAlH2.3 [P. Raj et al., Phys. Rev. B 63, 94414 (2001)], but differs from those of Bordallo et al., [H. N. Bordallo et al., Physica B 276–278, 706 (2000)] and of Kolomiets et al. [A. V. Kolomiets et al., J. Appl. Phys. 87, 6815 (2000)]. Our values of the structural parameters including the D-site occupancies are broadly in agreement with the results of Yamamoto et al. The magnetization studies on UNiAlD2.2 show a single antiferromagnetic transition with Néel temperature, TN=95 K. © 2001 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3420-3425 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial lithium tantalate thin films were grown on prismatic sapphire substrates by a specially designed ultrasonic nozzle assisted liquid injection metalorganic chemical vapor deposition system. The films were characterized by x-ray diffraction and transmission electron microscopy. They contained two crystallographic iso-variants. The relative volume of two variants in the as-grown films was nearly equal. The optical loss in the films, measured by photographic method, was 2 dB/cm. Second harmonic properties of the films were measured in transmission. Compared to bulk single crystals, the as-grown thin film had a weak second harmonic response in the range of 1 pm/V, which was ascribed to the antiparallel domains in the films. Mathematical equations are derived to correlate this microstructure to second harmonic generation. The films were successfully poled by the application of in-plane electric field. After poling the second harmonic generation coefficient increased to 12 pm/V. © 1995 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3675-3680 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial lithium tantalate thin films were grown on the prismatic plane of sapphire substrates by metalorganic chemical vapor deposition. The film contained two crystallographic variants, both epitaxially oriented with respect to the substrate. The variants were related to each other by 180° rotation about the c axis (which lies in the interface plane). A rectangular misfit dislocation network at the interface was imaged by cross-sectional high-resolution transmission electron microscopy, along two orthogonal directions, and by plan-view weak beam dark field transmission electron microscopy. The Burgers vectors of these two orthogonal sets of misfit dislocations were determined to be 1/3[11¯00] and 1/3[0001]. The spacing of the dislocations was nearly exactly equal to the ideal values suggesting a very high degree of epitaxy, which was also confirmed by nearly equal values of the full width at half-maximum of x-ray peaks in the ω scans obtained from the overgrowth and the sapphire substrate. The perfection of the epitaxy is attributed to the lack of multiplicity of slip systems in the interface plane for accommodating the misfit. © 1996 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 865-875 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a sensitive technique to study domain rearrangement in ferroelectric thin films using in situ second harmonic generation (SHG) measurements. The following film system on a MgO substrate was studied: KNbO3(110)||120 Å SrTiO3(100)||MgO(100). From x-ray diffraction, four possible domain variants in the film growth plane were determined to be KNbO3[11¯0]||SrTiO3 and MgO[001], [001¯], [010], or [01¯0] denoted as variants X+, X−, Y+ and Y−, with area fractions AX+, AX−, AY+ and AY−, respectively, in the film growth plane. The SHG signal (532 nm) from the films generated by a transmitted fundamental beam of 1064 nm was measured and theoretically correlated to the area fractions of different domain variants in the film. The magnitude and signs of net area fractions (AX+−AX−) and (AY+−AY−) were determined as a function of external field applied along the MgO〈001〉 direction in the film growth plane. No remnant poling was observed in KNbO3 films after application and removal of external fields up to 10 kV/cm at room temperature. We propose mechanisms to correlate this behavior to the pinning of domain wall motion by low angle grain boundaries in KNbO3. © 1997 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 759-761 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on ultrafast excitonic nonlinearities in ion-implanted InGaAs/InAlAs multiple quantum wells. We find that irradiation with energetic O+ and Ni+ ions can reduce the carrier lifetime from 1.6 ns down to 1.7 ps without significantly altering the excitonic absorption properties, making efficient fast saturable absorbers in the 1.3–1.5 μm wavelength range. © 1998 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3958-3960 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A reliable high temperature substrate heater for thin film deposition was constructed. The heater has a modular design and is built from parts that are easy to fabricate. The heater consists of a square arrangement of four tungsten filaments in a disk-shaped molybdenum susceptor. The electrical connections are placed near the edge where they are easily accessed. A finite element analysis shows that this design produces a more uniform temperature distribution than typical radial arrangements of filaments. The excellent performance of the new heater is demonstrated by thickness variations of less than 2% in thin films of lithium tantalate films grown on a 3.75 cm diam substrate by a high vacuum metal-organic chemical vapor deposition process. © 1996 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 792-794 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The coherency of the domain walls forming between the a and c domains in epitaxial lead titanate films forces a tilt in the a-domains with respect to the surface normal of the (001)SrTiO3 substrate. It is shown that the measurement of the relative volume fraction of the domains requires mapping of the x-ray diffraction intensity distribution in the reciprocal space. Maps for lead titanate films of different thickness show that a domains are essentially absent in films less than 50 nm thick and approach 25% volume fraction at a thickness of 350 nm. The tilt angle, which lies in the range 2.65±0.5°, remains unchanged with thickness. © 1995 American Institute of Physics.
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