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  • 2000-2004  (57)
  • 1995-1999  (93)
  • 1985-1989  (55)
  • 1975-1979  (25)
  • 1950-1954  (10)
  • 1925-1929  (5)
Collection
Keywords
Publisher
Years
Year
  • 1
    Monograph available for loan
    Monograph available for loan
    Wasser - die elementare Ressource : Leitlinien einer nachhaltigen Nutzung (1996)
    Berlin [u.a.] : Springer
    Details Availability
    Call number: PIK N 454-96-0251
    Type of Medium: Monograph available for loan
    Pages: X, 368 S.
    ISBN: 3540609717
    Series Statement: Veröffentlichungen der Akademie für Technikfolgenabschätzung in Baden-Württemberg
    Location: A 18 - must be ordered
    Branch Library: PIK Library
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  • 2
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    Annotated record of the detailed examination of Mn deposits from DSDP Leg 49 (Holes 407, 408, 410, 412, 412A) (1979)
    PANGAEA
    In:  Supplement to: Luyendyk, Bruce P; Cann, Joe R; Sharman, G; Roberts, W P; Shor, A N; Duffield, W A; Varet, J; Zolotarev, Boris P; Poore, Richard Z; Steinmetz, J C; Kobayashi, Kazuo; Vennum, W; Wood, D A; Steiner, M (1979): Initial Reports of the Deep Sea Drilling Project. U. S. Government Printing Office, XLIX, 1020 pp, https://doi.org/10.2973/dsdp.proc.49.1979
    Details
    Publication Date: 2023-08-28
    Description: Leg 49 of the International Phase of Ocean Drilling (IPOD) was designed with a wide spectrum of problems in mind. Topics investigated were (1) variation with time of mantle sources of spreading-center magmas, (2) aging of the volcanic layer, (3) degree of hydrothermal alteration and metamorphism of the volcanic layer, (4) lateral and vertical variation of the petrochemistry, magnetic properties, and structure of the volcanic layer, (5) north-south variability of spreading-center magmas through the North Atlantic, (6) initiation of glaciation during the late Pliocene, and (7) the influence of bottom currents originating at the Iceland-Faeroes Ridge on sediments of the ridge flank province of the western North Atlantic.
    Keywords: 49-407; 49-408; 49-410; 49-412; 49-412A; Comment; Deep Sea Drilling Project; Deposit type; DEPTH, sediment/rock; Description; DRILL; Drilling/drill rig; DSDP; Event label; File name; Glomar Challenger; Identification; Leg49; NOAA and MMS Marine Minerals Geochemical Database; NOAA-MMS; North Atlantic/FRACTURE ZONE; North Atlantic/RIDGE; Position; Quantity of deposit; Sample code/label; Sediment type; Substrate type; Uniform resource locator/link to image; Visual description
    Type: Dataset
    Format: text/tab-separated-values, 99 data points
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    DATA PANGAEA
  • 3
    Electronic Resource
    Electronic Resource
    Neutron diffraction determination of the nuclear spin ordering in Cu and Ag at nano- and subnano-K temperatures (invited) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5078-5080 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spontaneous nuclear spin ordering in the simple diamagnetic metals Cu and Ag has been studied by neutron diffraction using the spin dependent part of the nuclear cross section. Simple antiferromagnetic ordering of type I has been found in zero field for these fcc-systems below 60 and 560 pK for Cu and Ag, respectively. The ordering in an applied field has been investigated and the phase diagrams have been determined: a very complex phase diagram with different magnetic structures, strong hysteresis, and time dependence was found for Cu, while in Ag the phase diagram is very simple. Comparison with ab initio calculations allows a rather deep insight into the interactions leading to the ordering. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361579
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  • 4
    Electronic Resource
    Electronic Resource
    Meyer–Neldel behavior of deep level parameters in heterojunctions to Cu(In,Ga)(S,Se)2 (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2888-2890 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Admittance spectroscopy was measured on Cu(In,Ga)(S,Se)2 thin film and single crystal heterojunctions. The emission rates of defects for various near-stoichiometric compositions follow a Meyer–Neldel rule, showing increasing attempt-to-escape frequencies with increasing defect depth. Defects in highly (In,Ga)-rich material showed lower attempt-to-escape frequencies and follow a separate Meyer–Neldel relation. Repetitive air annealing of a CuInSe2 heterojunction revealed a shift of the depth and capture cross section of an observed defect. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117352
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  • 5
    Electronic Resource
    Electronic Resource
    Radiative recombination via intrinsic defects in CuxGaySe2 (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4391-4400 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed analysis of the radiative recombination processes in CuxGaySe2 epitaxial layers is presented aiming at an investigation of the intrinsic defect levels as a function of chemical composition. CuxGaySe2 is grown by metalorganic vapor phase epitaxy to allow a precise control of composition. Temperature and excitation intensity dependent photoluminescence is used to identify different recombination mechanisms and to determine the ionization energies of the defect levels involved. Defect-correlated optical transitions in Cu-rich epilayers are described in a recombination model consisting of two acceptor and one donor levels showing ionization energies of (60±10) meV, (100±10) meV, and (12±5) meV, respectively. The identification of a shallow compensating donor in CuxGaySe2 and the assignment of the 100 meV state to an acceptor are the most important new aspects in this model. Photoluminescence properties of layers showing Ga-rich compositions are discussed in a model of highly doped and highly compensated semiconductors—the model of fluctuating potentials. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1357786
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  • 6
    Electronic Resource
    Electronic Resource
    n-ZnO/p-CdSiAs2 heterojunction solar cells (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1560-1561 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heterojunction solar cells were prepared by magnetron sputtering of n-ZnO onto p-CdSiAs2 single crystals. These crystals were grown by chemical vapor-phase transport and have a resistivity of 2 Ω cm, a Hall mobility of 300 cm2/V s, and a net carrier density of 1016 cm−3 at room temperature. The heterojunctions exhibit short-circuit current densities up to 12 mA/cm2 and open-circuit voltages between 180 and 250 mV with power conversion efficiencies up to 1% under 72 mW/cm2 halogen lamp illumination. Open-circuit voltage values could be increased by heat treatment at 80 °C for 15 min in an argon atmosphere. By measuring the reflection and the quantum yield versus wavelength the efficiency losses in the short-wavelength region could be attributed to the corresponding high reflection.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341835
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  • 7
    Electronic Resource
    Electronic Resource
    Inelastic neutron scattering studies on 1D near-Heisenberg antiferromagnets: A test of the Haldane conjecture (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3953-3955 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Our studies of the spin dynamics for two near-Heisenberg antiferromagnets (AFMs) revealed: In CsNiCl3 (S=1) at low T(very-much-less-than)TN we confirm the conclusions given earlier, but disagreement with the spin-wave calculations used is found for the eigenvectors. For T〉TN, the most important result is the observation that all 〈SαSα〉 (α=x,y,z) are identical, demanding another interpretation for the gap observed than the easy axis one. In CsVCl3 (S= (3)/(2) ) we could not observe any inconsistency in the microscopic parameters determined above and below TN. Although there is a striking coincidence with Haldane's conjecture [unexplained gap for S=1 (CsNiCl3), no such gap for S= (3)/(2) (CsVCl3)], it is not clear whether this can be considered a proof for Haldane's conjecture.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338595
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  • 8
    Electronic Resource
    Electronic Resource
    Influence of linear and nonlinear excitations in the ferromagnetic S=1/2 chain system [C6H11NH3]CuBr3 (CHAB) (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3956-3958 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic properties of the title compound have been studied by measurements of the nuclear spin-lattice relaxation time T1, the uniform magnetization M, and by quasielastic and inelastic neutron scattering. The field and temperature dependence of T1 and the wave-number dependence of the magnon excitation energy can be satisfactorily described by linear spin-wave theory. A good description of M, however, requires a contribution from kink solitons. The available evidence suggests that, in contrast to the linear excitations, the nonlinear excitations in CHAB for B(parallel)c can be described very well by a classical model, which is consistent with the interpretation of earlier heat-capacity measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338596
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  • 9
    Electronic Resource
    Electronic Resource
    Thin-film CdSe: Photoluminescence and electronic measurements (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2601-2606 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic properties of thin CdSe films prepared through physical vapor transport were investigated using photoluminescence (PL) and electronic measurements. The films were studied at each of the main preparation steps, i.e., evaporation, annealing, etching, and finally photoetching. At 3 K two distinct donor-acceptor (DA) transitions at 1.75 and 1.70 eV were found in the photoluminescence spectra in addition to deep states at about 1.55 eV at 20 K. These DA transitions which are produced mainly during the evaporation might be associated with group VII and with alkali metal impurities. After each preparation step the DA transitions change their intensities. It is shown that photoetching of the films leads to a removal of the deep centers, while the 1.75 eV transition is blue shifted. In contrast with single-crystal CdSe the intensity of the PL increases after photoetching. The results of the PL are consistent with the electronic measurements. They are explained in terms of a previously published model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341649
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  • 10
    Electronic Resource
    Electronic Resource
    High-sensitivity quantitative Kelvin probe microscopy by noncontact ultra-high-vacuum atomic force microscopy (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 286-288 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present quantitative measurements of the work function of semiconductor and metal surfaces prepared in ultrahigh vacuum (UHV) using a combination of UHV noncontact atomic force microscopy and Kelvin probe force microscopy. High energetic and lateral resolution is achieved by using the second resonance frequency of the cantilever to measure the electrostatic forces, while the first resonance frequency is used to simultaneously obtain topographic images by the frequency modulation technique. Spatially resolved work-function measurements reveal a reduced work function in the vicinity of steps on highly oriented pyrolytic graphite. On the GaAs(110) surface it could be demonstrated that defect states in the forbidden band gap cause a local pinning of the Fermi level along monolayer steps. On p-WSe2(0001) work-function variations due to the Coulomb potential of single dopant sites were resolved. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124357
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