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  • FTIR  (2)
  • Springer  (2)
  • 2000-2004
  • 1995-1999  (2)
  • 1990-1994
  • 1
    Electronic Resource
    Electronic Resource
    Effects of Thermal Treatment on the Structure and Properties of SiO2-TiO2 Gel Films on Silicon Substrates (1997)
    Springer
    Journal of sol gel science and technology 8 (1997), S. 377-380 
    Details
    ISSN: 1573-4846
    Keywords: sol-gel thin film ; sintering ; FTIR
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Solution derived thin films of molar composition 90SiO2-10TiO2 deposited on c-Si substrates, for use as planar waveguides are characterized in terms of thickness and refractive index, by ellipsometry, as a function of isothermal heat treatments. The structural evolution of the films with thermal treatment is followed by infrared spectroscopy. The estimated average Si–O–Si intertetrahedral bond angle increases from 137°, at room temperature, to 144°, after heating at 900°C. The films should be annealed at T 〉 800°C, in order to release the residual stresses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1026420009842
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of thermal treatment on the structure and properties of SiO2−TiO2 gel films on silicon substrates (1997)
    Springer
    Journal of sol gel science and technology 8 (1997), S. 377-380 
    Details
    ISSN: 1573-4846
    Keywords: sol-gel thin film ; sintering ; FTIR
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Solution derived thin films of molar composition 90SiO2−10TiO2 deposited on c-Si substrates, for use as planar waveguides are characterized in terms of thickness and refractive index, by ellipsometry, as a function of isothermal heat treatments. The structural evolution of the films with thermal treatment is followed by infrared spectroscopy. The estimated average Si−O−Si intertetrahedral bond angle increases from 137°, at room temperature, to 144°, after heating at 900°C. The films should be annealed atT〉800°C, in order to release the residual stresses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02436868
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
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