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  • Wiley  (93)
  • American Institute of Physics (AIP)  (37)
  • American Geophysical Union  (24)
  • Oxford University Press  (22)
  • American Association for the Advancement of Science (AAAS)
  • Amsterdam : Elsevier
  • Blackwell Publishing Ltd.
  • Blackwell Science Ltd
  • 2000-2004  (75)
  • 1995-1999  (70)
  • 1990-1994  (44)
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Year
  • 11
    Electronic Resource
    Electronic Resource
    Nonadiabatic electronic interactions in the ion-pair states of NeICl (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 4171-4181 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Nonadiabatic interactions in the NeICl van der Waals complex have been explored in the lowest energy triad of ICl ion-pair states (∼39 000 cm−1). Dispersed fluorescence measurements reveal emission characteristic of multiple ion-pair electronic states, with the relative contributions from the E(0+), β(1), and D'(2) states changing with the initial ICl vibrational excitation (vICl). Emission directly from NeICl (vICl=0) complexes indicates that the initially prepared NeICl levels have mixed electronic character and that the ICl electronic parentage changes with the initial van der Waals vibrational level selected. NeICl complexes prepared with 1–4 quanta of ICl stretch undergo rapid vibrational predissociation with a strong propensity for ΔvICl=−1 relaxation. The electronic state(s) populated in the ICl fragments differ from the mixed electronic character of the initially prepared level, demonstrating that vibrational predissociation is accompanied by nonadiabatic electronic state changing processes. The observed final state selectivity may be attributed to the relative strength of the nonadiabatic couplings between the initial NeICl bound state and the final ICl states or a momentum gap rationale based on the overlap between the NeICl bound state wave function and the highly oscillatory continuum wave function of the separating fragments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.460650
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  • 12
    Electronic Resource
    Electronic Resource
    Picosecond measurement of substrate-to-adsorbate energy transfer: The frustrated translation of CO/Pt(111) (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 9986-9994 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The transient infrared response of CO/Pt(111) following picosecond visible excitation is reported. A spectrally broad decrease in reflectivity correlates with heating of the Pt lattice, and an observed shift in the CO(v=0→1) transition is interpreted as heating of the 60 cm−1 in-plane frustrated translational mode. A phenomenological three temperature model that assumes the adsorbate vibrational temperature Tads exclusively couples to either the electronic temperature Te (with a time constant τe) or to the lattice temperature Tlat (with a time constant τlat) describes the temporal response of the adsorbate vibrations. The lattice phonon temperature Tlat(z,t) and measured temperature dependence of the optical constants predict the observed spectrally broad reflectivity change. Density matrix methods model the infrared response of the transiently heated molecule. Limits of τe=2±1 ps or τlat〈1 ps are established by comparison of predicted spectra and the data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.464324
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  • 13
    Electronic Resource
    Electronic Resource
    The extraction of signal to noise values in x-ray absorption spectroscopy : Proceedings of the 4th international conference on synchrotron radiation instrumentation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 856-858 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The assessment of signal to noise (S/N) values in x-ray absorption spectroscopy is important for a number of reasons. Two methods will be described that remove the signal to give the noise. The first uses polynomials and the second Fourier filtering. Having extracted the noise the signal can then be used to calculate the S/N ratio. The method described operates on a background subtracted spectrum and is quick so it can be done on line in an experimental situation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142627
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  • 14
    Electronic Resource
    Electronic Resource
    Erratum: A femtojoule calorimeter using micromechanical sensors [Rev. Sci. Instrum. 65, 3793 (1994)] (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 3083-3083 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146429
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  • 15
    Electronic Resource
    Electronic Resource
    Studies of nanoscale dynamics using coherent x rays from an x-ray free electron laser (abstract) (invited) : Papers from the 12th National Synchrotron Radiation Instrumentation Conference (2002)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 1367-1367 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This talk will describe proposed studies of atomic- and nanoscale dynamics in condensed matter which take advantage of the high coherent x-ray flux to be produced by future x-ray free-electron laser (FEL) sources, such as the Linac Coherent Light Source at Stanford. In particular, I will focus on the current status and future prospects for photon correlation spectroscopy using coherent x-rays (XPCS), and the use of the ultrashort pulse structure of the x-ray FEL to observe dynamics into the femtosecond range. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1448148
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  • 16
    Electronic Resource
    Electronic Resource
    Asymmetrically cut crystals as optical elements for highly collimated x-ray beams : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1506-1509 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Asymmetrically cut perfect crystals, in both the Laue and Bragg geometries, are examined as single crystal monochromators for x-ray beams that are collimated to a small fraction of the Darwin width, as is typical in experiments with coherent x rays. Both the Laue and asymmetric Bragg geometries are plagued by an inherent chromatic aberration that increases the beam divergence much beyond that of the symmetric Bragg geometry. Measurements from a recent experiment at the ESRF are presented to compare Si(220) (symmetric Bragg), diamond(111) (asymmetric Laue), and diamond(111) (symmetric Bragg inclined) geometries. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145892
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  • 17
    Electronic Resource
    Electronic Resource
    Scanning tunneling microscope investigation of the growth morphology of titanium silicide on Si(111) substrates (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5143-5154 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A scanning tunneling microscope in ultrahigh vacuum has been used to investigate the growth, morphology, and surface atomic structure of ultrathin titanium silicide films on Si(111) substrates. Microstructural considerations have been used to identify various stages of the silicide growth. Atomic resolution images of a titanium silicide crystallite facet, formed at 850 °C, have been identified as a 2×2 silicon termination of a C54-TiSi2(010) surface. Possible epitaxial silicide/silicon relationships are provided. Theoretical consideration has been given to the interatomic bonding in the C54-TiSi2 lattice and the dangling bond density of ideally terminated silicide planes has been calculated. The highly reconstructed atomically flat surface of a large crystallite, formed at 1200 °C, has been assigned as a C54-TiSi2(311) plane giving the epitaxial relation C54-TiSi2(311)(parallel)Si(111). The presence of pairs and linear chains of defects, with common orientations, is attributed to the decomposition of a diatomic gas on the facet, producing sites of preferential adsorption on the silicide surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359747
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  • 18
    Electronic Resource
    Electronic Resource
    Scanning tunneling microscope crystallography of titanium silicide on Si(100) substrates (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 563-571 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A scanning tunneling microscope (STM) in ultrahigh vacuum has been used to investigate the growth, morphology, and surface atomic structure of ultrathin titanium silicide films on Si(100) substrates. Microstructural considerations have been used to identify various stages of the silicide growth. Methods for STM crystallography have been developed and used to identify possible epitaxial silicide/silicon relationships based on morphological considerations. Atomic resolution images of a titanium silicide crystallite have identified a 2×2 silicon termination of a C54-TiSi2(111) surface. It is shown that unambiguous identification of epitaxial relationships requires images of the atomic structure of the silicide crystallite surfaces in addition to morphological information. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359040
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  • 19
    Electronic Resource
    Electronic Resource
    Observation of growth modes during metal-organic chemical vapor deposition of GaN (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3326-3328 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present real-time surface x-ray scattering measurements during homoepitaxial growth of GaN by metal-organic chemical vapor deposition. We observed intensity oscillations corresponding to the completion of each monolayer during layer-by-layer growth. The growth rate was found to be temperature independent and Ga-transport limited. Transitions between step-flow, layer-by-layer, and three-dimensional growth modes were determined as a function of temperature and growth rate. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123333
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  • 20
    Electronic Resource
    Electronic Resource
    A normal force distance regulation scheme for near-field optical microscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1607-1609 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A near-field optical microscope (NFOM) has been developed that combines the features of a near-field optical microscope and an atomic force microscope. Improved control over tip-sample separation has led to improved optical imaging and independent surface topography information. The tip oscillation is normal to the sample plane thereby reducing lateral forces—important for nonperturbative imaging of soft samples. Both topographic images and reflection near-field optical images are presented which demonstrate the capability of the system. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115666
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