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  • 2005-2009  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Design, Fabrication and Application of 4H-SiC Trenched-and-Implanted Vertical JFETs (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 1191-1194 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: This paper reports recent progress in the development of a vertical JFET, the purely verticalJFET based on trenched-and-implanted vertical JFET (TI-VJFET) approach that eliminates the needof epitaxial regrowth at middle of device fabrication and the need of a merged lateral JFET to controlthe vertical JFET. Different structures have been designed to target breakdown voltages ranging from600V to 1.2kV. Vertical channel width uniformity has been studied, showing the feasibility ofachieving below 0.1um variation for reasonably flat wafers of good thickness uniformity. Pitch size ofthe designs has been reduced compared to early report. Gate trench width has been reduced from3.8um to 2.3um, aimed at increasing the device current capability. Fabricated device cells have beentested and packaged into multi-cell 30A TI-VJFETs which have been characterized of DC andswitching characteristics at room and elevated temperatures. Very fast current rise/fall times of 〈10nswere observed from RT to 200°C. PSpice model for TI-VJFET has been developed and applied to theperformance prediction of 3-phase SiC power inverter, suggesting a high efficiency 97.7% at 200°Cjunction temperature without using soft-switching scheme. Preliminary experimental demonstrationof a PWM-controlled three-phase inverter based on SiC TI-VJFET power board is reported
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1191.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    10 kV, 87 mΩcm〈sup〉2〈/sup〉 Normally-Off 4H-SiC Vertical Junction Field-Effect Transistors (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 1187-1190 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: SiC JFET, compared with SiC MOSFET, is attractive for high power, high temperatureapplications because it is free of gate oxide reliability issues. Trenched-and-Implanted VJFET (TIVJFET)does not require epi-regrowth and is capable of high current density. In this workwe demonstrate two trenched-and-implanted normally-off 4H-SiC vertical junction field-effecttransistors (TI-VJFET), based on 120μm, 4.9×1014cm-3 and 100μm, 6×1014cm-3 drift layers. Thecorresponding devices showed blocking voltage (VB) of 11.1kV and specific on-resistance (RSP_ON)of 124m7cm2, and VB of 10kV and RSP_ON of 87m7cm2. A record-high value for VB2/RSP_ON of1149MW/cm2 was achieved for normally-off SiC FETs
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1187.pdf
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