ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
Regular dislocation networks formed as a result of the direct bonding of Cz-Si wafers with oxideremnants on the pre-bonding surfaces were investigated. Besides the dislocation network, oxideprecipitates were detected at the bonding interface. The precipitate density across the network was~5×1010 cm-2, except small irregularly distributed circular areas, several mm in diameter, where thedensity was remarkably lower (〈5×108 cm-2). The dislocation network structure was not affected bythe change in the precipitate density. Photoluminescence spectroscopy (PL) and light beam inducedcurrent (LBIC) mapping were applied for characterization of such dislocation networks. For thelocations with high precipitate density, PL signal from dislocations and that from the band-to-bandtransitions were enhanced. On the other hand, the LBIC results indicated that oxide precipitates areactive recombination centers and thus should suppress the observed radiative transitions. Thecontroversy can be explained in the assumption that the D-band PL signal increases due toscattering of excitation light by the precipitates and due to related expansion of the excitation areaof the dislocation network. The light reflection from the precipitate layer also enhances the detectedband-to-band PL signal. The shape of PL spectra from the samples in the range of photon energies0.75 – 1.15 eV was not influenced by the oxide precipitates
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.503.pdf
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