Publication Date:
2008-04-08
Description:
The local atomic structure of a Ga1−xMnxAs (x= 0.07) layer during the annealing process was studied by means of X-ray diffuse scattering. The difference between the pair-distribution functions before and after annealing indicated the fraction of atoms that changed concentration and identified them to be exclusively interstitial atoms at the centres of gallium and/or arsenic tetrahedra in the GaMnAs unit cell.
Print ISSN:
0021-8898
Electronic ISSN:
1600-5767
Topics:
Geosciences
,
Physics
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