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  • 1
    Electronic Resource
    Electronic Resource
    The physical basis of an n g-boson system (1987)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 28 (1987), S. 2192-2193 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The mathematical group chain of an n g-boson system is SU(9)⊃SO(9)⊃ SO(5)×SU1(2)×SU2(2)∪SUa(2)×SUb(2). In this paper, the mathematical basis of this group chain is obtained by using the briefer method and then constructing the states of n g-bosons with good angular momentum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527433
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  • 2
    Electronic Resource
    Electronic Resource
    Decomposition of trimethylgallium in the downstream region of a near afterglow plasma (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2411-2413 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The downstream region of a near afterglow plasma (Δt=100 μs) has been used to decompose trimethylgallium (TMGa) and the products analyzed using a mass spectrometer. The major TMGa dissociation products with a hydrogen plasma were identified as methane and ethane while with a helium plasma ethane, ethylene, and acetylene were the main dissociation species. Time-resolved optical emission originating from the downstream reaction zone shows that decomposition of TMGa occurs primarily via photodissociation with the hydrogen plasma while both photon and metastable species (He 21 S and 23 S) contributed to the TMGa decomposition with the helium plasma. VUV transmitting and VUV absorbing windows placed between the upstream hydrogen plasma and the downstream TMGa source provided further direct evidence of the role of VUV photodissociation in the TMGa decomposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102030
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  • 3
    Electronic Resource
    Electronic Resource
    Windowless helium lamp assisted chemical vapor deposition of hydrogenated amorphous silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1314-1316 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A windowless helium lamp is employed to assist chemical vapor deposition of hydrogenated amorphous silicon from disilane feedstock gas at a film growth rate greater than 200 A(ring)/min. Material properties in this preliminary study are comparable to the best hydrogenated amorphous silicon (a-Si:H) films produced by conventional bulk plasma CVD techniques. The amount of photoconductivity degradation under long-time illumination is more than plasma-deposited a-Si-H thin films. Photoconductivity as high as σp =4×10−4 (Ω cm)−1 has been obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100007
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  • 4
    Electronic Resource
    Electronic Resource
    Disk hydrogen plasma assisted chemical vapor deposition of aluminum nitride (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 576-578 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We employ a well-confined hydrogen plasma of disk shape both as a vacuum ultraviolet (VUV) lamp operating primarily at 121.5 nm and as a source of atomic hydrogen radicals. Both VUV photons and atomic hydrogen act to dissociate feedstock gases used in low-temperature (〈400 °C) metalorganic chemical vapor deposition (MOCVD). Thin films have been deposited both with the confined hydrogen plasma and with an excimer laser operating at 193 nm in order to compare the two methods. Preliminary chemical and electrical properties of the films deposited via the two methods indicate the superiority of the atomic hydrogen assisted MOCVD technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99398
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  • 5
    Electronic Resource
    Electronic Resource
    Rapid removal for photoresist by a large-area electron beam (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5180-5182 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid removal of photoresist assisted by a large-area electron beam in oxygen atmosphere has been performed. The removal rate depended upon the pressure, flow rate of oxygen, and the power density of the electron beam. The maximum removal rate of 2500 nm/min for photoresist was one order of magnitude higher than that of conventional plasma processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338294
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  • 6
    Electronic Resource
    Electronic Resource
    The basis for the symmetric irreducible representations of SO(9) (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 442-446 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: An explicit basis is constructed for the symmetric irreducible representation (irrep) of SU(9)&supuline;SO(9)&supuline;SO(5)×SU1(2)×SU2(2). It is also indicated how good angular momentum states can be constructed. The techniques used are based on the well-known tensor algebra for the infinitesimal generators of simple Lie groups.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527239
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  • 7
    Electronic Resource
    Electronic Resource
    A population of red-transparent, triploid Carassius auratus (2005)
    Oxford, UK; Malden, USA : Blackwell Science Ltd
    Journal of fish biology 67 (2005), S. 0 
    Details
    ISSN: 1095-8649
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: A red-transparent population, distributed in Pingxiang of Jiangxi Province, was identified to be triploid Carassius auratus by DNA content measurement and chromosome analysis. Artificial propagation experiments indicated that the red-transparent triploid Carassius auratus could reproduce by gynogenesis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.0022-1112.2005.00789.x
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  • 8
    Electronic Resource
    Electronic Resource
    Corrosion of embedded parts of intake works of the mingechaur hydroelectric station (1985)
    Springer
    Power technology and engineering 19 (1985), S. 308-315 
    Details
    ISSN: 1570-1468
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Notes: Conclusions 1. An investigation of the kinetics of corrosion reactions on specimens and actual structures indicates the possibility of the formation of aeration and concentration cells, the electrodes of which contact environments with different pH values. 2. The observed corrosion rates dictate the need to protect embedded parts in the underwater zone from corrosion. The need to protect embedded parts by cathodic polarization is shown. 3. The cheapest, most simple, and most technologically feasible method of protecting embedded parts of hydrostations is the use of their electrochemical protection.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02028563
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  • 9
    Electronic Resource
    Electronic Resource
    Electrochemical protection of embedded parts of hydraulic structures (1986)
    Springer
    Power technology and engineering 20 (1986), S. 228-236 
    Details
    ISSN: 1570-1468
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Notes: Conclusions 1. Embedded parts of an intake and the reinforcing bars of reinforced-concrete walls can be completely protected by cathodic polarization with the use of suspended anodes. 2. With consideration of the limited length of the zone of action of cathodic protection and the need to prevent the flow of currents from one chamber to another, it is necessary to install anodes in each chamber. 3. It is necessary to place anodes in the lower and upper parts of the chambers with regulation of the currents of the anodes separately, depending on the current density necessary for protection. 4. With consideration of the variable flow regime and application of polarization to the binary system “steel-bars of the reinforced concrete,” it is necessary to provide automatic regulation of the regimes of the cathodic protection installation. 5. The current required for protection can be assumed equal to 0.2 A/m2 for the lower part of underwater elements and 0.1 A/m2 for the upper part. In this case, it is desirable in each individual case to check this parameter preliminarily before installing protection. 6. An analysis of the data shows the need for careful construction of the anodes and solution of problems about their proper location in order to avoid overpolarization of the bars of reinforced concrete when using nonautomatic electrochemical protection installations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01428954
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  • 10
    Electronic Resource
    Electronic Resource
    Rapid growth of ultra thin SiO2 films by a large-area electron beam (1989)
    Springer
    Applied physics 48 (1989), S. 567-571 
    Details
    ISSN: 1432-0630
    Keywords: 52.80-s ; 79.20Kz ; 81.60-j ; 68.55-b
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Rapid growth of ultra thin oxide films (40–180Å) of silicon using a low-energy large-area electron beam has been performed with a pressure ratio of 3∶1 (O2/He) and a total pressure of 0.5–0.7 Torr. A higher oxidation rate of about 625Å2/s is found for shorter irradiation time of the e-beam in the e-beam dose range 0.75–3 Coulomb/cm2 and at lower substrate temperature 540–740°C. AES and XPS demonstrated a rapid electron-stimulated oxidation process of the Si surface. For the grown ultra thin oxide films, C-V characteristics, dielectric strength, uniformity of the film over the entire Si wafer and its thickness as a function of the processing time of the e-beam are also presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617858
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