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  • Other Sources  (139)
  • ELECTRONICS AND ELECTRICAL ENGINEERING  (139)
  • 2005-2009
  • 1985-1989  (139)
  • 1
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    Single event upset immune integrated circuits for Project Galileo (1985)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: Tests showed that bipolar chips in the attitude control computer of the Galileo spacecraft would likely cause catastrophic mission failure due to single particle upset. This paper describes the design and testing of CMOS replacements which are speed compatible with the bipolar parts and are immune to upset by 165-MeV krypton ions.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Nuclear Science (ISSN 0018-9499); NS-32; 4159-416
    Format: text
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    NASA TECHNICAL REPORTS
  • 2
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    Optically controlled reflection modulator using GaAs-AlGaAs n-i-p-i/multiple-quantum-well structures (1989)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: An optically controlled reflection modulator has been demonstrated that consists of a combination of a GaAs-AlGaAs n-i-p-i doping structure with a multiple-quantum-well structures on top of a distributed Bragg reflector, all grown by MBE. A modulation of approximately 60 percent is obtained on the test structure, corresponding to a differential change of absorption coefficient in the quantum wells of approximately 7500/cm. Changes in reflectance can be observed with a control beam power as low as 1.5 microW. This device structure has the potential of being developed as an optically addressed spatial light modulator for optical information processing.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Optics Letters (ISSN 0146-9592); 14; 230-232
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  • 3
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    InGaAs/InAlAs hot-electron transistor (1986)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: Using InGaAs for the base and InAlAs for the emitter and collector barriers, the first hot-electron transistor in this material system is fabricated. It is shown that 1.6 percent of the injected hot electrons can be transported ballistically through a 0.3 micron thick In(0.53)Ga(0.47)As plus 800-A-thick InAlAs barrier layer at 77 K giving rise to an average mean free path of 920 A. An energy spread of 130 MeV was observed for the ballistic electrons injected at about 700 MeV above the thermal equilibrium conditions. The value of collector barrier heights measured are in reasonable agreement with those deduced independently from thermionic emission studies in InGaAs gate, InAlAs/InGaAs capacitor structures.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Applied Physics Letters (ISSN 0003-6951); 48; 1799-180
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  • 4
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    Field-dependent linewidths and photoluminescence energies in GaAs-AlGaAs multiquantum well modulators (1986)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: Photoluminescence linewidths and transition energies have been measured in GaAs-AlGaAs multiple quantum wells with large (equal to or greater than 160 A) barrier widths as a function of applied transverse electric field. The experimental data agree well with values calculated by using a recently developed variational technique. It is apparent that heterointerface roughness is the dominant line broadening mechanism. The emission intensity decreases rapidly with field, principally due to carrier tunneling at high fields. At 80 kV/cm a shift of 20 meV in the emission energy is observed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Applied Physics Letters (ISSN 0003-6951); 48; 1246-124
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  • 5
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    Modeling and equalization of nonlinear bandlimited satellite channels (1986)
    In:  CASI
    Details
    Publication Date: 2016-06-07
    Description: The problem of modeling and equalization of a nonlinear satellite channel is considered. The channel is assumed to be bandlimited and exhibits both amplitude and phase nonlinearities. A discrete time satellite link is modeled under both uplink and downlink white Gaussian noise. Under conditions of practical interest, a simple and computationally efficient design technique for the minimum mean square error linear equalizer is presented. The bit error probability and some numerical results for a binary phase shift keyed (BPSK) system demonstrate that the proposed equalization technique outperforms standard linear receiver structures.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: A Survey of the State-of-the-Art and Focused Research in Range Systems, Task 2; 5 p
    Format: application/pdf
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  • 6
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    Polarization of microwave noise source radiation in the 30 GHz to 300 GHz range (1988)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: Radiation spectra have been obtained in order to calculate the frequency bandwidth and polarization of three microwave noise sources. Results were obtained in the 1-10-mm wavelength region using a lamellar grating Fourier transform spectrometer and a helium-cooled bolometer detector. A secondary transmission region was found to have an input current as well as a polarization dependence, despite the directional output of the waveguide antenna.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: International Journal of Infrared and Millimeter Waves (ISSN 0195-9271); 9; 1141-115
    Format: text
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    NASA TECHNICAL REPORTS
  • 7
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    Microwave performance of InAlAs/InGaAs/InP MODFET's (1987)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: Modulation-doped InAlAs/InGaAs/InP structures were grown by molecular beam epitaxy and fabricated into FETs with excellent RF gain performance. The intrinsic transconductance was about 400 mS/mm at 300 K. Current gain cutoff frequencies of up to 26.5 GHz were obtained in 1-micron gate devices. Extremely small S12 and large S21 led to a very large F(max) of 62 GHz. These results represent the best reported figures for 1-micron devices in this material system, and slightly better than those obtained in recently developed pseudomorphic modulation-doped field effect transistors.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Electron Device Letters (ISSN 0741-3106); EDL-8; 24-26
    Format: text
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  • 8
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    A VLSI architecture for performing finite field arithmetic with reduced table look-up (1986)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: A new table look-up method for finding the log and antilog of finite field elements has been developed by N. Glover. In his method, the log and antilog of a field element is found by the use of several smaller tables. The method is based on a use of the Chinese Remainder Theorem. The technique often results in a significant reduction in the memory requirements of the problem. A VLSI architecture is developed for a special case of this new algorithm to perform finite field arithmetic including multiplication, division, and the finding of an inverse element in the finite field.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: The Telecommunications and Data Acquisition Report (date]; p 143 - 154
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  • 9
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    A new VLSI complex integer multiplier which uses a quadratic-polynomial residue system with Fermat numbers (1986)
    In:  CASI
    Details
    Publication Date: 2006-02-14
    Description: A quadratic-polynomial Fermat residue number system (QFNS) has been used to compute complex integer multiplications. The advantage of such a QFNS is that a complex integer multiplication requires only two integer multiplications. In this article, a new type Fermat number multiplier is developed which eliminates the initialization condition of the previous method. It is shown that the new complex multiplier can be implemented on a single VLSI chip. Such a chip is designed and fabricated in CMOS-pw technology.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: The Telecommunications and Data Acquisition Report (date]; p 155 - 163
    Format: text
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  • 10
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    Microwave response of a HEMT photoconductive detector (1989)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: Interdigitated photoconductive detectors with 5-micron geometry have been fabricated on HEMT material and their optical response characteristics at 820 nm have been examined at dc and in the frequency range of 2-8 GHz. These have been compared with characteristics of similar 1-micron devices on MESFET material. The shapes of the frequency responses were found to differ, but the useful bandwidth of both types of devices was found to be similar.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Microwave and Optical Technology Letters (ISSN 0895-2477); 2; 1-3
    Format: text
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