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  • Articles  (5)
  • 78.65  (5)
  • Springer  (5)
  • American Association for the Advancement of Science (AAAS)
  • SciELO Brazil
  • 2005-2009
  • 1985-1989  (5)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (5)
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  • Articles  (5)
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  • Springer  (5)
  • American Association for the Advancement of Science (AAAS)
  • SciELO Brazil
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (5)
  • Physics  (5)
  • 1
    Electronic Resource
    Electronic Resource
    Laser-induced synthesis of compound semiconducting films (1986)
    Springer
    Applied physics 40 (1986), S. 133-143 
    Details
    ISSN: 1432-0630
    Keywords: 86.84 ; 78.65 ; 78.90
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Compound semiconducting films are synthesized by laser irradiation of sandwich films of the constituants, under various conditions (time of irradiation, laser power, temperature, etc.). Experimental data give evidence of the roles of various parameters. After a presentation of the experimental results, the fundamental physico-chemical mechanisms of laser material interactions are analyzed. Particular emphasis is given to effects that need to be treated by using very-far-from-equilibrium concepts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617394
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Thermodesorption of ultrathin organic films studied by reflection (1986)
    Springer
    Applied physics 39 (1986), S. 173-181 
    Details
    ISSN: 1432-0630
    Keywords: 44.50 ; 78.65 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Optical reflection measurements are described as a new and simple technique to measure thicknesses and thickness changes of ultrathin organic overlayers on inorganic support. The prime advantages are high sensitivity in thickness measurements (0.1–1 Å), applicability under varying environmental conditions, nondestructiveness, applicability on different supports and high time resolution. These features are assessed theoretically and experimentally studying Langmuir-Blodgett films on SiO2 and Au supports. These films, in this work prepared with the model compound arachidic acid, provide the salient feature of well-defined thicknesses in integer multiples of 26.7 Å. Application of the technique in thermodesorption experiments reveals distinguished binding states with binding energies (73–110 kJ/mol) depending on the counterion (Mg2+ or Cd2+) used in preparing the films and ratios of different states depending on thickness. The binding energy for the main component of multilayers (73 and 81 kJ/mol) with thickness larger than 100 Å is comparable to the heat of evaporation of bulk fatty acids. In addition an analytic expression between layer thicknesses and reflection is derived from the Fresnel equation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620732
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  • 3
    Electronic Resource
    Electronic Resource
    Optical absorptivity of ion-beam irradiated silicon (1988)
    Springer
    Applied physics 45 (1988), S. 69-72 
    Details
    ISSN: 1432-0630
    Keywords: 78.65 ; 61.80J
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Single-crystal layers of silicon on sapphire have been irradiated with Ne and Kr ions at room temperature. The concomitant changes in optical absorption have been measured as a function of photon energy. The absorptivity of the amorphized silicon is about one order of magnitude higher as compared to the crystalline state in the photon energy interval of 1.5–3 eV. This is sufficient for generating optical patterns of high contrast by irradiation of selected parts of the wafer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618765
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  • 4
    Electronic Resource
    Electronic Resource
    Optical recording using hydrogen phthalocyanine thin films (1985)
    Springer
    Applied physics 36 (1985), S. 71-79 
    Details
    ISSN: 1432-0630
    Keywords: 42.30 ; 64.70 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Vacuum sublimed thin films of the blue dye hydrogen phthalocyanine (H2Pc) were incorporated into various optical recording structures. The dye was shown to be thermally, hydrolytically, and oxidatively stable. In all cases, the writing mechanisms are dependent on the sublimation of H2Pc. Several recording structures which take advantage of the sublimation property of H2Pc are demonstrated, including pit forming and bubble forming media. These H2Pc-based optical recording structures show very high optical contrast and low writing threshold energies. In addition, very thin films (50–75Å) of H2Pc were incorporated into a tellurium-based medium, which significantly enhanced the writing contrast observed in that medium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620612
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  • 5
    Electronic Resource
    Electronic Resource
    Hydrogenated amorphous silicon films obtained by a low pressure dc glow discharge (1988)
    Springer
    Applied physics 46 (1988), S. 207-213 
    Details
    ISSN: 1432-0630
    Keywords: 61.40 ; 72.20 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Films of a-Si: H have been deposited by means of a dc hot cathode discharge of SiH4 with electrostatic confinement at a pressure as low as 0.4 Pa. The plasma used is quite quiescent as has been observed by means of reproducible Langmuir probe measurements. Substrates have been placed at different locations in between the electrodes, some of them facing the anode and the others facing the cathode. Films deposited on substrates facing the cathode present a granular, non-columnar, structure, an IR spectrum with only SiH absorption peaks, and a very low photoresponse. Films deposited on substrates facing the anode have a similar IR spectrum but are homogeneous, have lower hydrogen content, and present a high photoresponse. The optical absorption coefficientα shows in all samples theαnE=C(E−E0) x behaviour, but with exponentx=3 and notx=2 as is usually considered in a-Si∶H.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00939265
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