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  • Articles  (69)
  • 2005-2009  (42)
  • 1985-1989  (24)
  • 1960-1964  (3)
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  • Articles  (69)
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  • 1
    Electronic Resource
    Electronic Resource
    Effects of in situ plasma supply in undoped and boron-doped polycrystalline silicon by low-pressure chemical vapor deposition at 500–840 °C (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4154-4160 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped and boron-doped polycrystalline silicon films were prepared on a fused quartz at 500–840 °C by low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD) from a SiH4+B2H6+H2 mixture, using the same fabrication system. The effects of plasma (rf power) supply on the structural and electrical properties were investigated. Below 700 °C, all films show a 〈110〉 preferential orientation (P.O.), increasing with an increase in rf power. Particularly between 650 and 700 °C, an extremely stronger 〈110〉 P.O. is found at a rf power 〉15 W. Above 730 °C, undoped LPCVD and PECVD films and boron-doped LPCVD films represent a nearly random orientation. On the other hand, for boron-doped PECVD films, a strong 〈111〉 texture is observed in the intermediate doping range. The 〈110〉 texture increasing with rf power in undoped PECVD films is interpreted as indicating enhanced nucleation at the surface in contact with the gas phase. The plasma supply also has essential effects for smoothing the surface and improving the boron-doping efficiency. The effects of plasma supply are discussed in terms of increased surface diffusion of adsorbates, sputtering effect, and a contribution of hydrogen covering the surface. PECVD films are more stable for foreign contamination after fabrication than LPCVD films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341328
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  • 2
    Electronic Resource
    Electronic Resource
    Growth of crystalline zirconium dioxide films on silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2407-2409 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zirconium dioxide (ZrO2) films have been grown on Si(100), Si(111), and SiO2/Si substrates heated at the range from room temperature to 800 °C by vacuum evaporation. X-ray diffraction and reflection high-energy electron diffraction observations reveal the epitaxial growth of tetragonal ZrO2(200) films on Si(100) substrates at 800 °C. The epitaxial imperfection is caused by preferentially oriented tetragonal ZrO2(002) grains. The crystalline system of ZrO2 films depends on the substrate temperature. The crystalline perfection and the orientation of tetragonal ZrO2 films grown at 800 °C depend on the substrate orientation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335912
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  • 3
    Electronic Resource
    Electronic Resource
    High-rate growth at low temperatures by free-jet molecular flow: Surface-reaction film-formation technology (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1173-1175 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface-reaction film-formation technology of epitaxial Si and polcrystalline silicon using free-jet molecular flow is proposed. High-rate (∼0.5 μm/min or higher) growth of homoepitaxial Si films with high crystallographic perfection has been achieved at temperatures as low as 600 °C without the chemical by-product deposition on the inner surface of the reaction chamber. This result also implies that this system has the cleaning-free function. The film-formation mechanism appears to be dominated by the chemical reaction on the substrate surface without the vapor phase reaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99196
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  • 4
    Electronic Resource
    Electronic Resource
    Control factor of native oxide growth on silicon in air or in ultrapure water (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 562-564 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Native silicon (Si) oxide growth on Si (100) wafers in air and in ultrapure water at room temperature requires coexistence of water and oxygen in the air and ultrapure water ambients. The growth rate data on n-, n+-, and p+-Si (100) in air indicate layer-by-layer growth of an oxide. The growth rate on n-Si (100) in ultrapure water may be governed by a parabolic law. For native oxide growth in ultrapure water, the number of Si atoms dissolved in ultrapure water is over one order of magnitude larger than the number of Si atoms contained in the grown native oxide film. The structural difference between the native oxide film in air and in ultrapure water is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102435
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  • 5
    Electronic Resource
    Electronic Resource
    Low-temperature nitridation of fluorinated silicon dioxide films in ammonia gas (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 981-983 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new technique of growing nitrided oxide at low temperatures has been developed. Fluorine-enhanced thermal oxidation of silicon in O2+NF3 at temperatures below 800 °C and subsequent annealing of the fluorinated oxide in pure ammonia gas at the same temperature result in the formation of nitrided oxide. The dielectric breakdown strength of the fluorinated oxide is improved by the nitridation. Also, the nitrided oxide acts as a protective layer against alkaline ion contamination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98783
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  • 6
    Electronic Resource
    Electronic Resource
    Degradation of Corrosion Resistance of Implant Metals Promoted by Living Adhesive Cells (2005)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 475-479 (Jan. 2005), p. 2075-2078 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/09/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.475-479.2075.pdf
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  • 7
    Electronic Resource
    Electronic Resource
    An Inverted Observation Technique for Interactions Between Titanium Oxide and Cells on Commercially Pure Titanium (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 309-311 (May 2006), p. 363-366 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Commercially pure titanium thin films were uniformly formed on inner surfaces of tissue culture dishes by DC sputtering method. Then, the thickness of the film was about 30nm and the films were thin titanium oxide layer on commercially pure titanium. MC3T3-E1 cells were normally cultured on the dishes. Then, The films on the dishes were not broken and did not decompose. After 24 hours, observations of the sample from the direction of the cells' bottom surfaces adhered thetitanium oxide on the commercially pure titanium film by an inverted optical microscope succeeded. Therefore, the new technique is useful for observations the interactions between titanium oxide and cells
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/50/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.309-311.363.pdf
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  • 8
    Electronic Resource
    Electronic Resource
    A rechargeable redox battery utilizing ruthenium complexes with non-aqueous organic electrolyte (1988)
    Springer
    Journal of applied electrochemistry 18 (1988), S. 909-914 
    Details
    ISSN: 1572-8838
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Notes: Abstract A new-type redox battery has been developed. Some ruthenium complexes in organic electrolyte solution were utilized as the electrode active materials. A single cell consisting of [Ru(bpy)3]2+ complex in acetonitrile solution had an open circuit voltage of 2.6 V and a discharge current of 5 mA cm−2 (at a smooth carbon electrode). The characteristics of this type of cell were much influenced by such factors as the diaphragm material and the concentration of the complex. A cell with flowing electrolyte was also constructed and its charge-discharge performance was examined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01016050
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  • 9
    Electronic Resource
    Electronic Resource
    Lyman-α excitation spectra in the photodissociation of the doubly excited states of H2 (1986)
    Springer
    The European physical journal 4 (1986), S. 65-71 
    Details
    ISSN: 1434-6079
    Keywords: 33 ; 34 ; 35
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A Lyman-α excitation spectrum has been observed using synchrotron radiation in the energy region corresponding to the double electron excitation of H2. There exist in the spectrum three thresholds at 26.6±0.5 eV, 29.2±0.7 eV and 30.9±0.6 eV, and a dip at 34.1±0.5 eV. A Lyman-α excitation spectrum in the energy region corresponding to the single electron excitation has been also observed using a detection system which works as a band pass filter for detecting of Lyman-α fluorescence. The cross section of Lyman-α fluorescence in the photodissociation of the doubly excited states is very small, e.g., in the order of 10−20 cm2 at 30 eV, in comparison with that from the single electron excitation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01432499
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  • 10
    Electronic Resource
    Electronic Resource
    Weak nucleon currents in beta decay and muon capture (1985)
    Springer
    Hyperfine interactions 21 (1985), S. 143-158 
    Details
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We made extensive investigations on the weak charged nucleon currents and structure of complex nuclei in weak nuclear processes. Using our new formalism, which has almost no approximation as far as the lepton part is concerned, we have studied the beta-ray spectra and beta-ray angular distributions in the12B and12N beta decays. The weak magnetism predicted by CVC is in excellent agreement with the experimental data on beta-ray spectra given by the Columbia and Heidelberg groups. It is noticed here that the differenceα − −α + of the coefficients in the beta-ray angular distributions in aligned12B and12N is free from ambiguity of the nuclear model. We found practically no second-class induced tensor current with the data given by the Osaka, Louvain and Zürich groups. On the other hand, the sumα − +α + of the coefficients represents the time component of the main axial vector current, and it is free from weak form factors. With this sum we studied the exchange-current and core-polarization effects. These two effects are large, and they are almost cancelled out by each other in this case. We also found the strength of the induced pseudoscalar form factor which is generally consistent with PCAC, from nuclear polarizations of12B in muon capture of12C performed by the Zürich and Tokyo groups. These nuclear polarizations are insensitive to the nuclear model, if the exchange-current and corepolarization effects are properly taken into account.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02061982
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