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  • 2005-2009  (116)
  • 1990-1994  (85)
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  • 1
    Electronic Resource
    Electronic Resource
    Electron trap generation in thermally grown SiO2 under Fowler–Nordheim stress (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 725-734 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron trap generation in thermally grown silicon dioxide (SiO2) during Fowler–Nordheim (FN) stress is investigated by using an aluminium-gated capacitor structure. The generated electron traps are characterized by the avalanche electron injection technique. The experimental results support the model that electron trapping in oxide follows the first-order kinetics and may have multiple-capture cross sections. It is found that both donorlike (positive charge related) and acceptorlike (neutral before capturing electron) traps are generated and they behave differently. The donorlike trap is not stable at or above room temperature and its effective density saturates as the stressing time increases, while the opposite is true for the acceptorlike trap. The electron-capture cross section of donorlike trap spreads from 10−18 to over 10−14 cm2, but the capture cross section of the generated acceptorlike trap is limited in the range of (4.5–9)× 10−17 cm2. The acceptorlike trap is generated by the interaction between free holes and SiO2 and hole trapping leads to donorlike traps. The relation between the generated trap and the as-grown trap will be discussed. Comparison of the electron traps generated by FN stress with those by irradiation and hot hole injection indicates that the electron trap generation under these different stressing conditions is controlled by the same mechanism. The necessary condition for electron trap generation is the presence of holes in the oxide, rather than a high electrical field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351334
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  • 2
    Electronic Resource
    Electronic Resource
    A comparative study of the electron trapping and thermal detrapping in SiO2 prepared by plasma and thermal oxidation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1429-1435 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Preparation of silicon dioxide (SiO2) thin films by plasma anodization is a promising low temperature (≤600 °C) silicon oxidation technique. This paper investigates the electron trapping and thermal detrapping properties of the plasma grown oxide and compares them with those of the conventional thermal oxide. The avalanche electron injection measurement shows that the electron trapping in the plasma oxide is more severe. The two electron capture cross sections detected in the plasma oxide are of the order of 10−15 and 10−17 cm2, respectively. The former is absent in the thermal oxide and is a feature of oxides prepared at low temperature. The latter is also found in thermal oxide, but its chemical nature is different. Both of them are located near SiO2/silicon interface, indicating that they are related to the intermediate layer. The electron detrapping process in the plasma oxide is different from that in the thermal oxide and has a linear dependence on the logarithmic time. The detrapping is thermally activated with an activation energy of 0.63–0.75 eV. The above traps in plasma oxide can be removed by a high temperature (e.g., 960 °C) post-oxidation annealing (POA) in an inert ambient. After such a POA, the electron trapping in plasma oxide is similar to that in thermal oxides. Some speculation on the trap formation processes is included.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351703
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  • 3
    Electronic Resource
    Electronic Resource
    A quantitative investigation of electron detrapping in SiO2 under Fowler–Nordheim stress (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5989-5996 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detrapping of the trapped electrons from the acceptorlike trapping sites in SiO2 under Fowler–Nordheim (FN) stress has been quantitatively investigated using Al/SiO2/Si capacitor structures. Before FN stress, the traps were charged using the avalanche electron injection technique to enhance subsequent detrapping, and facilitate its distinction from trapping in subsequent studies. The quantity of electrons detrapped was assessed from the shift in the electrical field strength near the cathode. Under FN stress with an electrical field of 8 MV/cm or over, the probability of captured electrons remaining trapped was found to be less than 20%. This probability was insensitive to the number of electrons initially trapped in the oxide, decreasing as the stressing field strength increases. Within the experimental range of this study, the transient behavior of electron detrapping cannot be satisfactorily described by the dynamic balance model and a new model is developed based on the reactions occurring in the oxide under FN stress. It is found that there is more than one mechanism contributing to the electron detrapping and that the detrapping efficiency is unrelated to the initial capture cross sections of traps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350452
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  • 4
    Electronic Resource
    Electronic Resource
    p-type delta-doped layers in silicon: Structural and electronic properties (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1648-1650 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the properties of p-type delta-doped layers prepared in molecular beam epitaxy-Si by growth interruption and evaporation of elemental B. Secondary-ion mass spectrometry measurements at several primary ion energies have been used to show that the full width at half maximum is ∼2 nm. Hall measurements confirm that the layers are completely activated at 300 K with a mobility of 30±5 cm2/V s for a carrier density of (9±2)×1012 cm−2. At temperatures below 70 K nonmetallic behavior is observed which we have attributed to conduction between impurity states. It is concluded that the critical acceptor separation for the Mott metal-insulator transition in this system is significantly less than the value found in uniformly doped Si:B.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104076
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  • 5
    Electronic Resource
    Electronic Resource
    Erratum: "As/P interdiffusion in ultrathin InAs/InP strained quantum wells'' [Appl. Phys. Lett. 65, 341 (1994)] (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1596-1596 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intermixing process of ultrathin InAs/InP strained quantum well structures by thermal annealing at 730–830 °C is investigated by photoluminescence measurements. Analyzing the results using a microscopic model, the interdiffusion process is characterized by an activation energy close to 3.8±0.2 eV, leading to an interdiffusion coefficient close to 7±0.5×10−17 cm2/s at 830 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113090
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  • 6
    Electronic Resource
    Electronic Resource
    As/P interdiffusion in ultrathin InAs/InP strained quantum wells (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 341-343 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intermixing process of ultrathin InAs/InP strained quantum well structures by thermal annealing at 730–830 °C is investigated by photoluminescence measurements. Analyzing the results using a microscopic model, the interdiffusion process is characterized by an activation energy close to 3.8±2.0 eV, leading to an interdiffusion coefficient close to 7±0.5×10−7 cm2/s at 830 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112365
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  • 7
    Electronic Resource
    Electronic Resource
    Structural Framework for the Protein Kinase Family (1992)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Cell and Developmental Biology 8 (1992), S. 429-462 
    Details
    ISSN: 0743-4634
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.cb.08.110192.002241
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  • 8
    Electronic Resource
    Electronic Resource
    Camp-Dependent Protein Kinase: Framework for a Diverse Family of Regulatory Enzymes (1990)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Biochemistry 59 (1990), S. 971-1005 
    Details
    ISSN: 0066-4154
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Chemistry and Pharmacology , Biology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.bi.59.070190.004543
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  • 9
    Electronic Resource
    Electronic Resource
    A unique mode of parasitism in the conifer coral tree Parasitaxus ustus (Podocarpaceae) (2005)
    Oxford, UK : Blackwell Science Ltd
    Plant, cell & environment 28 (2005), S. 0 
    Details
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Almost all parasitic plants, including more than 3000 species, are angiosperms. The only suggested gymnosperm exception is the New Caledonian conifer, Parasitaxus ustus, which forms a bizarre graft-like attachment to the roots of another conifer Falcatifolium taxoides. Yet, the degree of resource dependence of Parasitaxus on Falcatifolium has remained speculative. Here we show that Parasitaxus is definitively parasitic, but it displays a physiological habit unlike any known angiosperm parasite. Despite possessing chloroplasts, it was found that the burgundy red shoots of Parasitaxus lack significant photosynthetic electron transport. However unlike non-photosynthetic angiosperm parasites (holoparasites), tissues of Parasitaxus are considerably enriched in 13carbon relative to its host. In line with anatomical observations of fungal hyphae embedded in the parasite/host union, stable carbon isotopic measurements indicate that carbon transport from the host to Parasitaxus most likely involves a fungal partner. Therefore, Parasitaxus parallels fungus-feeding angiosperms (mycoheterotrophs) that steal carbon from soil mycorrhizal fungi. Yet with its tree-like habit, association with fungi residing within the host union, high stomatal conductance, and low water potential, it is demonstrated that Parasitaxus functions unlike any known angiosperm mycoheterotroph or holoparasite. Parasitaxus appears to present a unique physiological chimera of mistletoe-like water relations and fungal-mediated carbon trafficking from the host.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3040.2005.01378.x
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  • 10
    Electronic Resource
    Electronic Resource
    Hydathodal leaf teeth of Chloranthus japonicus (Chloranthaceae) prevent guttation-induced flooding of the mesophyll (2005)
    Oxford, UK : Blackwell Science Ltd
    Plant, cell & environment 28 (2005), S. 0 
    Details
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Why the leaves of cold temperate deciduous and moisture-loving angiosperms are so often toothed has long puzzled biologists because the functional consequences of teeth remain poorly understood. Here we provide functional and structural evidence that marginal leaf teeth of Chloranthus japonicus, an understory herb, enable the release of guttation sap during root pressure. When guttation from teeth hydathodes was experimentally blocked, we found that the leaf intercellular airspaces became flooded. Measurements of chlorophyll a fluorescence revealed that internal flooding resulted in an inhibition of photosynthesis, most likely through the formation of a film of water within the leaf that reduced CO2 diffusion. Comparing a developmental series of leaves with and without teeth experimentally covered with wax, we found that teeth did not affect overall leaf stomatal conductance and CO2 uptake. However, maximal and effective light-saturation PSII quantum yields of teeth were found to be lower or equal to the surrounding lamina throughout leaf ontogeny. Collectively, our results suggest hydathodes and their development on teeth apices enable the avoidance of mesophyll flooding by root pressure. We discuss how these new findings bear on the potential physiological interpretations of models that apply leaf marginal traits to infer ancient climates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3040.2005.01354.x
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