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  • 1
    Electronic Resource
    Electronic Resource
    Composition of porous silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2321-2325 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Samples of porous Si were prepared from p-type, 10 Ω cm Si under 10 mA cm−2 anodization in aqueous HF (mostly 50%) for 5 min. These showed photoluminescence peaking at 835 nm at 10 K, with full width half maximum of 78 nm, the data showing little change up to 150 K. High-resolution scanning electron microscopy showed column widths of 2–6 nm in the 2-μm-thick films. Hydrogen content was measured by the method of elastic recoil detection, and carbon and oxygen by nuclear reaction analysis. The fluorine content was measured by particle-induced gamma emission as 0.03 at. %. The Si, O, C, and H contents were confirmed by Rutherford backscattering analysis, as approximately Si2.5O1.2C1.3H1.2. The data, particularly the low Si content, are not inconsistent with the presence of complex chemical compounds in the films, although any role they play is not established.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353136
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  • 2
    Electronic Resource
    Electronic Resource
    Compaction, distribution, and chemical bonding of tungsten-implanted glassy carbon (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5687-5694 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The composition, distribution, and chemical bonding of tungsten-implanted glassy carbon have been studied for ion doses between 3.5×1014 and 1.5×1017 ions/cm2. The implantations were performed using a metal-vapor vacuum arc ion source which for an extraction potential of 20 kV yields a mean implant energy of 60 keV. The implanted layer was examined by Rutherford backscattering spectrometry and Auger profiling spectroscopy. In addition, volume effects were assessed by measuring the step height between implanted and unimplanted regions. It has been established that the implanted tungsten is bonded in a carbidic configuration. This is in agreement with thermodynamic data which favors carbide formation rather than separate phases of metallic tungsten and graphitic carbon. For the highest dose studied, 1.5×1017 ions/cm2, the tungsten distribution was found to be nearly constant near the surface followed by a decrease at larger depths. For ion doses up to 3.6×1016 ions/cm2, the maximum tungsten distribution was found to occur at a depth 300±100 A(ring) and the implanted and retained doses were found to be equal. For tungsten ion doses between 7.35×1014 and 1×1016 ions/cm2, the implanted region was found to be compacted by 300±100 A(ring). The latter is attributed to an irradiation-induced densification of glassy carbon from 1.5 to 2.1 g/cm3. This compaction effect is also found to occur upon C+ (30 keV) implantation for ion doses between 3×1016 and 1.3×1017 ions/cm2. In this case the implanted layer was compacted by 400±100 A(ring). For higher tungsten doses, a steep increase in compaction of the tungsten implanted layer was observed. This is attributed to chemical and sputtering effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351919
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  • 3
    Electronic Resource
    Electronic Resource
    Conductivity in insulators due to implantation of conducting species (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3841-3845 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Control of the surface conductivity of insulators can be accomplished by high dose ion implantation of conductive species. The use of C+ as the implant species is particularly interesting because C can either form electrically insulating sp3 bonds or electrically conducting sp2 bonds. In the present work, fused quartz plates have been irradiated with 100 keV C+ ions to doses up to 1×1017 ions/cm2 at room temperature and at 200 °C. The ion beam induced conductivity was monitored in situ and was found to increase by up to 8 orders of magnitude for the ion dose range studied. Xe implantations over a similar range did not induce any changes in the conductivity showing that the increase in conductivity is caused by the presence of the C in the fused quartz matrix and not by damage. The conductivity, σ, is found to vary with dose D as log σ∝D−1/3 over a wide dose range, strongly supporting a hopping model for the conduction mechanism. The dependence of the conductivity on implantation temperature and on post-implantation annealing sheds light on the clustering of the C implants. The temperature dependence of the conductivity for the highest doses employed (1×1017 C+/cm2) can be described very well by ln σ∝T. This is a peculiar dependence which does not comply with any of the standard models for conduction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352893
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  • 4
    Electronic Resource
    Electronic Resource
    Ion-beam induced compaction in glassy carbon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 135-138 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cross-sectional transmission electron microscopy has been used to investigate the implanted layer in glassy carbon irradiated with 50 keV C ions to a dose of 5×1016 ions/cm2. It was found that in addition to the formation of an amorphous surface layer approximately 100 nm deep, the ion-beam modified layer was compacted from the unirradiated density of 1.5 to 2.4±0.2 g/cm3. Ion implantation was also found to increase the refractive index of glassy carbon from 1.8±0.1 to 2.4±0.1 which is also consistent with the proposition that an increase in the density of the implanted layer has occurred. The formation of a dense, amorphous carbon surface layer could explain the observed increase in wear resistance of glassy carbon following ion implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354145
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  • 5
    Electronic Resource
    Electronic Resource
    Chemical effects induced by hydrogen plasma exposure on tungsten-implanted glassy carbon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2235-2239 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of hydrogen plasma erosion of glassy carbon implanted with tungsten has been studied for a dose of 2.5×1016 ions/cm2 and an average ion energy of 60 keV. Raman measurements of the tungsten-implanted layer prior to and after exposure to the hydrogen plasma revealed that the damaged layer induced by tungsten ion bombardment, unlike by C+ bombardment, has not been completely removed in the plasma erosion process. Auger profile measurements were performed on the as-implanted layer and after exposure to a hydrogen plasma for 1 h. By comparing the tungsten depth distribution for these two cases the hydrogen plasma erosion rate of tungsten-implanted glassy carbon has been estimated. It has been found that during the first hour of exposure to the hydrogen plasma the average erosion rate of the implanted layer was estimated to be 265±35 A(ring)/h. In contrast the erosion rate of unimplanted glassy carbon in the hydrogen plasma was found to be 3000±300 A(ring)/h.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356286
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  • 6
    Electronic Resource
    Electronic Resource
    Ion beam induced conductivity in chemically vapor deposited diamond films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2187-2189 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline diamond films deposited by the microwave plasma chemical vapor deposition (CVD) technique onto quartz substrates have been irradiated with 100 keV C and 320 keV Xe ions at room temperature and at 200 °C. The dose dependence of the electrical conductivity measured in situ exhibited complicated, nonmonotonic behavior. High doses were found to induce an increase of up to ten orders of magnitude in the electrical conductivity of the film. The dose dependence of the conductivity for the CVD films was found to be very similar to that measured for natural, type IIa, single-crystal diamonds irradiated under identical conditions. This result suggests that the conduction mechanism in ion beam irradiated polycrystalline CVD diamond films is not dominated by grain boundaries and graphitic impurities as one might have expected, but rather is determined by the intrinsic properties of diamond itself.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103931
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  • 7
    Electronic Resource
    Electronic Resource
    Possibility of carbon nitride formation by low-energy nitrogen implantation into graphite: In situ electron spectroscopy studies (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 845-847 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The possibility of carbon nitride formation by low-energy nitrogen ion irradiation of graphite was investigated by in situ x-ray photoelectron spectroscopy. Room-temperature and hot 500-eV N+2 implantations were performed with saturation doses for which a constant nitrogen concentration was obtained. Analysis of the N(1s) core level line indicates the existence of three different carbon–nitrogen bonding states in the room-temperature implanted layer. Annealing experiments up to 500 °C revealed a slight, gradual decrease of nitrogen concentration in the implanted layer accompanied by a partial redistribution of the nitrogen bonding states. Hot nitrogen implantations at 300 and 500 °C resulted in a predominant population of the more covalent, with higher N(1s) binding energy, nitrogen bonding state. Such a distribution of carbon–nitrogen chemical bonds could not have been obtained by annealing of the room-temperature implanted layer. These results may be of importance in finding a way to produce the elusive β-C3N4 phase by ion beam assisted deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110999
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  • 8
    Electronic Resource
    Electronic Resource
    Inhibition of hydrogen plasma erosion and enhancement in wear resistance of tungsten implanted glassy carbon (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2077-2079 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The hydrogen plasma erosion and abrasive wear resistance of glassy carbon implanted with tungsten has been studied as a function of ion dose. It was found that the onset of hydrogen plasma erosion inhibition occurred at a dose of ∼6.5×1015 ion/cm2. In addition, the tungsten implanted material exhibits an increase in wear resistance similar in magnitude to that obtained with nitrogen and other nonmetallic ions. Carbon ion implantation does not significantly inhibit erosion in a hydrogen plasma. Hence, the resistance to such erosion observed with tungsten implanted glassy carbon is believed to be due to a chemical effect specific to certain metallic ions. In contrast, increased wear resistance is a defect driven effect not specific to the ion used.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107094
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  • 9
    Electronic Resource
    Electronic Resource
    Diamond film growth on Ti-implanted glassy carbon (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1631-1633 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of diamond thin films on glassy carbon substrates has been investigated as a function of deposition time for different surface treatments. Implantation of Ti to a dose of 1.7×1017 cm−2 and abrasion with diamond powder have both been examined to determine their effect on film nucleation and growth. At the shorter deposition times studied, diamond nucleation was observed on all test samples with those subjected to the abrasive pretreatment exhibiting the higher growth rates. However, the adhesion and uniformity of films on unimplanted glassy carbon were found to deteriorate significantly following deposition runs of 14 and 21 h duration. This was attributed to a destabilization of the underlying surface caused by plasma erosion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110718
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  • 10
    Electronic Resource
    Electronic Resource
    Q-sized cadmium sulfide: synthesis, characterization, and efficiency of photoinitiation of polymerization of several vinylic monomers (1992)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 96 (1992), S. 5546-5552 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100192a067
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