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  • American Institute of Physics (AIP)  (2)
  • 2005-2009
  • 1990-1994  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    More information on the calibration of scanning stylus microscopes by two-dimensional fast Fourier-transform analysis (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 2860-2863 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An analysis of two-dimensional fast Fourier transform from images of periodical lattices (like highly oriented pyrolytic graphite) has been performed to understand and decouple the various parameters which account for distorted images in stylus microscopy. The effects of the various sources of image distortion have been described by means of linear maps and a mathematical approach has been developed to find the various correction coefficients resulting from the Fourier space analysis which restore the correct geometry of the images. Furthermore, the trend analysis of the distortion angle upon the scanning frequency shows the possibility of decoupling the role of "static'' and "time dependent'' distortion parameters. This possibility may be used for an a priori prediction of possible distortions in stylus microscopy and thus for a real-time correction of the images during scanning.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145207
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Investigation of carrier transport through silicon wafers by photocurrent measurements (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4000-4008 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurement of the ac photocurrent in metal/insulator/semiconductor capacitors can be used as a tool to measure minority-carrier diffusion and lifetime. The amplitude of the ac photocurrent generated at a silicon surface biased into inversion depends on the number of excess minority carriers present at that surface. By comparing this amplitude when intensity-modulated light is directed to each side of the same device, minority-carrier diffusion from the back to the front of the device can be characterized. An analytical model of this transport process predicts the dependence of the ac photocurrent on frequency and wafer thickness, and allows the determination of a value of the bulk lifetime free of the influence of surface recombination. Measurements under low-light intensity levels are presented on n-type silicon wafers with lifetimes in the 10–100 μs range. Lifetimes are found about a factor of 2 lower than those measured with noncontact photoconductive decay, at high-light intensity levels. This is expected due to the difference between high- and low-level minority-carrier injection. Fitting the data to the model also yields a value of 115 μm for the average depth at which carriers are generated and diffuse to the front with backside illumination at 940 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356022
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    Paper (German National Licenses)
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