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  • Articles  (736)
  • Springer  (632)
  • American Institute of Physics (AIP)
  • Cambridge University Press
  • 2005-2009  (206)
  • 1990-1994  (443)
  • 1965-1969  (87)
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  • 1
    ISSN: 1420-9071
    Keywords: Bird feeding preferences ; digestion ; intestinal enzymes ; sucrase ; fruit ; nectar
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract Plants pollinated and dispersed by different groups of birds offer different kinds of sugars in nectar and fruit pulp. The preferences and physiological traits of avian pollinators and seed dispersers are broadly correlated with the sugar composition of the nectar and fruit that they feed on and appear to have influenced the evolution of the sugar composition of the rewards that plants offer. Hummingbirds prefer sucrose whereas many nectar- and fruit-eating passerines prefer glucose and fructose. Preference for hexoses in passerines seems to be associated with poor sucrose assimilation resulting from two physiological mechanisms: lack of intestinal sucrase activity and fast passage rates. Sucrase activity absence appears to be restricted to a single phylogenetic group (the sturnid-muscicapid lineage). Fast passage rates seem to be characteristic of many small frugivores and to hinder the assimilation of complex nutrients that require hydrolysis before absorption. Hummingbirds have extremely specialized digestive traits that allow them to assimilate sucrose at high rates and with extremely high efficiency. These specialized digestive traits appear not to be present in many nectar-feeding passerines.
    Type of Medium: Electronic Resource
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  • 2
    Publication Date: 1992-06-01
    Print ISSN: 0014-4754
    Topics: Biology , Medicine
    Published by Springer
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  • 3
    Publication Date: 2005-11-01
    Print ISSN: 1420-682X
    Electronic ISSN: 1420-9071
    Topics: Biology , Medicine
    Published by Springer
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  • 4
    Publication Date: 2006-06-01
    Print ISSN: 1559-2723
    Electronic ISSN: 1559-2731
    Topics: Geography
    Published by Springer
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  • 5
    Publication Date: 2017-04-04
    Description: A series of experiments created melt inclusions in plagioclase and pyroxene crystals grown from a basaltic melt at 1,150 C, 1.0 GPa to investigate diffusive fractionation during melt inclusion formation; additionally, P diffusion in a basaltic melt was measured at 1.0 GPa. Melt inclusions and melts within a few 100 microns of plagioclase– melt interfaces were analyzed for comparison with melt compositions far from the crystals. Melt inclusions and melt compositions in the boundary layer close to the crystal–melt interface were similar, but both differ significantly in incompatible element concentrations from melt found greater than approximately 200 microns away from the crystals. The compositional profiles of S, Cl, P, Fe, and Al in the boundary layers were successfully reproduced by a two-step model of rapid crystal growth followed by diffusive relaxation toward equilibrium after termination of crystal growth. Applying this model to investigate possible incompatible element enrichment in natural melt inclusions demonstrated that at growth rates high enough to create the conditions for melt inclusion formation, *10-9–10-8 m s-1, the concentration of water in the boundary layer near the crystal was similar to that of the bulk melt because of its high diffusion coefficient, but sulfur, with a diffusivity similar to major elements and CO2, was somewhat enriched in the boundary layer melt, and phosphorus, with its low diffusion coefficient similar to other high-field strength elements and rare earth elements, was significantly enriched. Thus, the concentrations of sulfur and phosphorus in melt inclusions may over-estimate their values in the bulk melt, and other elements with similar diffusion coefficients may also be enriched in melt inclusions relative to the bulk melt.
    Description: Natural Sciences and Engineering Research Council of Canada Discovery grant; Istituto Nazionale di Geofisica and Vulcanologia, Italy
    Description: Published
    Description: 377-395
    Description: 2.3. TTC - Laboratori di chimica e fisica delle rocce
    Description: JCR Journal
    Description: reserved
    Keywords: Melt inclusions ; Phosphorus diffusion ; Crystal growth ; Diffusive Fractionation ; 04. Solid Earth::04.08. Volcanology::04.08.03. Magmas
    Repository Name: Istituto Nazionale di Geofisica e Vulcanologia (INGV)
    Type: article
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Asymmetries in sample holders used for magnetic measurements on magnetometers based on induction methods, such as those equipped with SQUID sensors, can lead to substantial errors and/or important artifacts which resemble phase transitions. They occur under the conditions for which sample and/holder have signals of opposite sign, but are nearly equal in magnitude. The most serious errors can occur often, but not exclusively, for compounds having intermediate magnetic dilution. We present here a general discussion of the problem illustrated by measurements of a polyoxometallate with the known Keggin structure K6[Fe(III)W12O40]⋅nH2O, done on a SHE VTS model 905. While one of the obvious solutions to this problem is the use of holders with a signal much smaller than that of the sample, it would be preferable if, in addition, the holder had a response of the same sign as that of the sample, for all temperatures and fields measured.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented describing Si impurity-induced layer disordering (IILD) and Al-Ga interdiffusion in AlxGa1−x As-GaAs quantum-well heterostructures (QWHs) using open-tube rapid thermal annealing (900–1000 °C) in a flowing N2/H2 ambient. The data show that Al-Ga interdiffusion is enhanced by n-type crystal doping and suppressed by p-type doping. By surrounding the active layers of the heterostructure with layers of opposite doping, we show that the surrounding layers modify the interdiffusion by controlling the diffusion of point defects to the active layers of the heterostructure. Data are presented showing the effects of dielectric encapsulation (SiO2, Si3N4 ) on Al-Ga interdiffusion. The data show that regardless of doping SiO2 enhances interdiffusion as compared to Si3N4. To achieve more thorough layer intermixing of AlxGa1−x As-GaAs QWHs, Si IILD is also investigated in the high-temperature As-poor regime. The experimental data show that in a high-temperature As-poor annealing ambient, little or no Si diffusion occurs from an elemental Si source in contact with a p-type GaAs QWH cap layer. To achieve Si diffusion under these conditions requires removal of the GaAs cap and the use of Al-reduced SiO2 or Si3N4 as a Si diffusion source. Based on secondary-ion mass spectroscopic measurements, direct comparison of Si diffusion from closed-tube (825 °C, 48 h) and open tube (1000 °C, 10 min) anneals shows increased Si incorporation and layer disordering at higher temperatures.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2724-2731 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Numerous distributions (Mott, exponential, bimodal) have been proposed on the basis of geometrical or semi-empirical grounds as suitable for characterizing the mass distribution from fracture or spallation. It is argued here that the lognormal distribution is particularly suitable on the basis of a number of considerations: empirical fits, the fractal character of fracture, and the geometrical arguments when carried to their logical conclusion. We explain the deviations from the lognormal distribution as due to the finite thickness of the shell, which violates the scale-independence requirement for exact fractal behavior and introduces multifractal character to the spallation process. A plausiblity argument for the observed relationship between ductility and the shape of the distribution is offered.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experiments with coaxial plasma guns at currents in excess of ten megamperes have resulted in the production of high-voltage pulses (0.5 MV) and hard x radiation (10–200 keV). The x-radiation pulse occurs substantially after the high-voltage pulse suggesting that high-energy electrons are generated by dynamic processes in a very high speed ((approximately-greater-than)106 m/s), magnetized plasma flow. Such flows, which result from acceleration of relatively low-density plasma (10−4 vs 1.0 kg/m3) by magnetic fields of 20–30 T, support high voltages by the back electromotive force-u×B during the opening switch phase of the plasma flow switch. A simple model of classical ion slowing down and subsequent heating of background electrons can explain spectral evidence of 30-keV electron temperatures in fully stripped aluminum plasma formed from plasma flows of 1–2 × 106 m/s. Similar modeling and spectral evidence indicates tungsten ion kinetic energies of 4.5 MeV and 46 keV electron temperatures of a highly stripped tungsten plasma.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6174-6178 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented describing the incorporation of Si in locally laser-melted AlxGa1−xAs-GaAs quantum well heterostructures from a thin-film dielectric source. The composition of the melted material, the effects of the Si source (SiO2 or Si3N4) on impurity incorporation, and the doping behavior are examined via secondary-ion mass spectroscopy, electron dispersion x-ray spectroscopy, transmission electron microscopy, and scanning electron microscopy. The data indicate that upon melting, a (Si)y(AlxGa1−xAs)1−y alloy is formed from which impurity-induced layer disordering may be effected. After annealing the melt region is found to contain crystalline segregates, which are attributed to rapid thermal quenching of the melt. Applications of these results to the fabrication of buried-heterostructure lasers by laser-assisted disordering are discussed.
    Type of Medium: Electronic Resource
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