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  • American Institute of Physics (AIP)  (4)
  • Wiley-Blackwell  (4)
  • 2005-2009
  • 1990-1994  (7)
  • 1975-1979  (1)
  • 1
    Electronic Resource
    Electronic Resource
    The influence of indium doping on the [1¯10] indentation cracks in (100) n-type gallium arsenide (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4276-4281 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microhardness indentation was used to determine the hardness and the microcrack anisotropy in In-doped gallium arsenide as a function of the doping level, indentation load and temperature. The hardness decreased with temperature from 600 kg/mm2 at room temperature to 50 kg/mm2 at 400 °C. There was no apparent influence of indium doping on the microhardness up to the maximum doping level, 0.41 at. %. However, the [110] and [1¯10] radial cracks emanating from the intersection of the Vickers diamond indentation diagonals varied significantly with temperature (in the range of room temperature to 250 °C) and doping level (up to a maximum of 0.41 at. %). Both crack orientations exhibited a maximum of the crack length at approximately 150 °C. The maximum in the crack length decreased and the spread of the crack lengths with temperature broadened out as the doping increased; the longest crack was 80×10−6 m for the undoped sample and 60×10−6 m for the sample doped to 0.41 at. %.The radial crack lengths varied with load as K=PCn, where n=0.65 at all temperatures except 200 °C, in which case n=0.77. This larger value of n has been associated with a transition in deformation mode at 1N. Scanning electron microscopy of the indentations showed that the [1¯10] cracks were discontinuous, suggesting that healing of these cracks may have occurred.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346220
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  • 2
    Electronic Resource
    Electronic Resource
    Spectroscopic studies of Sb3+ color centers in alkali halide single crystals (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 6420-6428 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The emission from KCl@B:Sb3+ and KI@B:Sb3+ excited in the A-absorption band was measured as a function of exciting photon energy and temperature. The A-band excitation produced two emission bands for KCl@B:Sb3+ and a single band for KI@B:Sb3+. The definitive assignment of these bands is presented in terms of the adiabatic potential energy surface (APES), in which the effect of the spin–orbit interaction (SO) on the Jahn–Teller (JT) interaction coupling to the Eg mode is taken into account. The polarization spectrum and the angular dependence of polarization ratio of the A-band emission were also studied to determine the symmetry axes of the Sb3+ –vacancies complex. The results indicate that the anisotropy is associated with the relaxed excited state (RES) of Sb3+. It is also found that the JT interaction coupling to the T2g mode and the vacancies, situated in the next-nearest-neighbor (nnn) and the nearest-neighbor (nn) positions to the Sb3+ ion, give rise to an additive perturbation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.460271
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  • 3
    Electronic Resource
    Electronic Resource
    InGaAs/GaAs shallow quantum well optical switches grown by metalorganic vapor phase epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3065-3067 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical switches have been fabricated from InGaAs/GaAs shallow quantum well structures grown by metalorganic vapor phase epitaxy. The photocurrent spectra exhibited very sharp room-temperature exciton peaks around 900 nm. Quantum well modulators consisting of such a shallow system showed contrast ratios larger than 2:1 and no sign of strain-induced degradations. The epitaxial quality, however, had some interesting dependence on the choice of substrate dopant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111348
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  • 4
    Electronic Resource
    Electronic Resource
    Symmetric self-electro-optic effect device array grown by metalorganic vapor phase epitaxy using GaAs/Al0.04Ga0.96As shallow quantum wells (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1176-1178 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A self-electro-optic effect device (SEED) epistructure grown by low-pressure metalorganic vapor phase epitaxy (MOVPE) is demonstrated. The symmetric SEED using GaAs/Al0.04Ga0.96As shallow quantum well (SQW) exhibits a contrast ratio of 2.9 at 5 V bias with 50 pairs of GaAs wells. This high contrast results from the low background carrier concentration of absorption region which is obtained by the temperature controlled compensation of the acceptors and donors. The absorption data suggest that the MOVPE technique is comparable to the MBE technique in growing the high performance SQW epistructure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108777
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  • 5
    Electronic Resource
    Electronic Resource
    On the strain Assumption in a finite element model for plates and shellsModified version of a paper presented at the 30th AIAA/ASME/ASCE/AHS Structures, Structural Dynamics and Materials Conference, Mobile, AL, U.S.A., April 3-5, 1989 (1991)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal for Numerical Methods in Engineering 31 (1991), S. 287-305 
    Details
    ISSN: 0029-5981
    Keywords: Engineering ; Engineering General
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mathematics , Technology
    Notes: Two different methods of assuming independent strain fields are examined for the nine node degenerate solid shell element. In the first case, the assumed strain field is chosen for the local orthogonal co-ordinate systems defined at the Gaussian integration points. In the second case, the independent strain is assumed for a local orthogonal co-ordinate system defined at the origin of the parent co-ordinates. The results of numerical tests involving simple example problems demonstrate that the second method is capable of exactly representing constant stress or moment states even when element geometries are distorted. In addition, both methods lead to a finite element model which is free of locking.
    Additional Material: 14 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/nme.1620310206
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  • 6
    Electronic Resource
    Electronic Resource
    A finite element formulation with stabilization matrix for geometrically non-linear shells (1992)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal for Numerical Methods in Engineering 33 (1992), S. 1703-1720 
    Details
    ISSN: 0029-5981
    Keywords: Engineering ; Engineering General
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mathematics , Technology
    Notes: An assumed strain finite element formulation with a stabilization matrix is developed for analysis of geometrically non-linear problems of isotropic and laminated composite shells. The present formulation utilizes the degenerate solid shell concept and assumes an independent strain as well as displacement. The assumed independent strain field is divided into a lower order part and a higher order part. Subsequently, the lower order part is set equal to the displacement-dependent strain evaluated at the lower order integration points and the remaining higher order part leads to a stabilization matrix. The strains and the determinant of the Jacobian matrix are assumed to vary linearly in the thickness direction. This assumption allows analytical integration through thickness, independent of the number of plies. A nine-node element with a judiciously chosen set of higher order assumed strain field is developed. Numerical tests involving isotropic and composite shells undergoing large deflections demonstrate the validity of the present formulation.
    Additional Material: 13 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/nme.1620330810
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  • 7
    Electronic Resource
    Electronic Resource
    Study of 20node solid element (1990)
    New York, NY [u.a.] : Wiley-Blackwell
    Communications in Applied Numerical Methods 6 (1990), S. 197-205 
    Details
    ISSN: 0748-8025
    Keywords: Engineering ; Engineering General
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mathematics , Technology
    Notes: The 20node three-dimensional solid element based on the assumed displacement model was compared with the 18node solid element based on the assumed strain model. The kinematic stability associated with different integration rules was investigated for the 20node element.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/cnm.1630060306
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  • 8
    Electronic Resource
    Electronic Resource
    Grafting of methyl methacrylate onto ribonucleic acid (1977)
    New York : Wiley-Blackwell
    Journal of Polymer Science: Polymer Letters Edition 15 (1977), S. 17-21 
    Details
    ISSN: 0360-6384
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Additional Material: 1 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pol.1977.130150103
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