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  • American Institute of Physics (AIP)  (4)
  • 2005-2009
  • 1990-1994  (3)
  • 1985-1989  (1)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 2136-2139 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A system of optical beating spectroscopy has been newly developed for hyper-resolution Brillouin scattering. Frequency resolution as high as 1 kHz was obtained, far beyond the limit of the classical Fabry–Perot interferometer which is commonly used in ordinary experiments. This system is useful over the frequency range from 104 to 109 Hz at present. Experiments for Rayleigh and/or Brillouin spectra were performed in water, toulene, and carbon disulfide to demonstrate the performance of this system.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4531-4535 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal gallium nitride was grown on each of the two polar {0001} planes of 6H-silicon carbide substrates utilizing metal-organic vapor-phase epitaxy. The substrate polarity is clearly shown to strongly influence the surface morphology and the photoluminescence property of the layer. The examination of the layer surfaces using x-ray photoelectron spectroscopy revealed that {0001} GaN grown on the basal planes of SiC changes its polarity in accordance with the substrate polarity.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In addition to being initially developed as an energy driver for an inertial confinement fusion, an intense, pulsed, light-ion beam (LIB) has been found to be applied to materials science. If a LIB is used to irradiate targets, a high-density "ablation'' plasma is produced near the surface since the range of the LIB in materials is very short. Since the first demonstration of quick preparation of thin films of ZnS by an intense, pulsed, ion-beam evaporation (IBE) using the LIB-produced ablation plasma, various thin films have been successfully prepared, such as of ZnS:Mn, YBaCuO, BaTiO3, cubic BN, SiC, ZrO2, ITO, B, C, and apatite. Some of these data will be presented in this paper, with its analytic solution derived from a one-dimensional, hydrodynamic, adiabatic expansion model for the IBE. The temperature will be deduced using ion-flux signals measured by a biased ion collector. Reasonable agreement is obtained between the experiment and the simulation. High-energy LIB implantation to make chemical compounds and the associated surface modification are also discussed.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2251-2253 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaN single-crystal films were grown on (0001) plane sapphire substrates at 800 °C by metalorganic vapor phase epitaxy. By using such a high temperature for growth, the crystalline quality has been greatly improved. But a high nitrogen over pressure and high indium source flow rate were necessary to achieve significant indium incorporation during growth. For the first time, photoluminescence has been observed in InGaN, and near-band edge emission is seen in the photoluminescence at 77 K. From this photoluminescence, the dependence of a near-band edge emission on the indium mole fraction of InGaN has been investigated.
    Type of Medium: Electronic Resource
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