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  • Oxford University Press  (40)
  • American Institute of Physics (AIP)  (12)
  • 2005-2009  (26)
  • 1995-1999  (26)
  • 1970-1974
  • 1
    Electronic Resource
    Electronic Resource
    Magnetic properties of RTSb3 (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4759-4761 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetization, electrical resistivity, and thermal expansion measurements have been performed on polycrystalline RTSb3 (R=La, Ce, Pr, Nd, Gd, Tb, and Dy; T=Cr, V) samples in order to study their magnetic properties. Depending on the rare-earth element, RTSb3 has been found to have either a purely ferromagnetic (or antiferromagnetic) phase or combination of antiferromagnetic (lower-temperature) and ferromagnetic (higher-temperature) phases. The antiferromagnetic order evolves from the ferromagnetic order as a result of the competition between R3+ and Cr3+ ions. As R is changed from La to Dy, the antiferromagnetic ordering of the R3+ ions becomes more prominent and predominate over the ferromagnetic ordering of Cr3+ for R=Gd, Tb, and Dy. Thermal expansion measurements show that the antiferromagnetic transition accompanies a drop in the sample dimension. The order of the ferromagnetic transition is found to be of the second order. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370472
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  • 2
    Electronic Resource
    Electronic Resource
    Elimination of hillock formation in Al interconnects using Ni or Co (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 625-633 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of using bilayer Ni/Al-1%Cu or Co/Al-1%Cu metallization stacks with regard to hillock formation is investigated in this study and compared to hillock suppression capabilities of Al-1%Si and Al-1%Cu single layer films and Ti/Al-1%Cu bilayer metallization stacks. Various heat treatments during and immediately after depositions were used to study the resistances of different metallization stack specimens to hillock formation. The densities and sizes of hillocks were characterized using scanning electron microscopy and atomic force microscopy, while interfacial reactions between the transition metal layer and Al-1%Cu in the metallization stack were examined using glancing angle x-ray diffraction. Resistivities of the bilayer metallization stacks were characterized using conventional four-point probe measurements. Our studies indicate that metallization processes involving bilayer metallization stacks of nickel and cobalt with Al-1%Cu are more robust compared to those involving titanium with Al-1%Cu. The mechanism of hillock formation is analyzed in light of intermetallic compound formation and stress-strain considerations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370776
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  • 3
    Electronic Resource
    Electronic Resource
    Real time measurement of plasma position in the SINP tokamak (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 4130-4135 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An electronic hardware has been developed for the real time determination of the position of the plasma column in the SINP tokamak. The method is based on the Fourier integration of the poloidal magnetic field using cos θ and sin θ coils. The spurious pickups in these coils due to time varying magnetic fields have been explained by a model as being due to eddy currents in the vacuum vessel and the conducting shell. These pickups have been compensated in the hardware by simulating the effects of the eddy currents by linear networks. This diagnostic provides outputs proportional to the horizontal and vertical displacements of the plasma column at three toroidal locations simultaneously. An output proportional to the plasma current is also available. Performance evaluation shows that for both plasma current and displacements, the hardware outputs are in good agreement with the values computed by software. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149258
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  • 4
    Electronic Resource
    Electronic Resource
    A passive vibration isolation stack for LIGO: Design, modeling, and testing (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 208-214 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Multiple-stage seismic vibration isolation stacks, which consist of alternating layers of stiff masses and compliant springs, can provide significant passive filtering of ground vibration for experiments and equipment that are sensitive to mechanical noise. We describe the design, modeling and testing of a prototype of a stack suitable for use in the Laser Interferometer Gravitational-wave Observatory (LIGO). This is a four-stage elastomer (spring) and stainless steel (mass) stack, consisting of a table resting on three separate legs of three layers each. The viscoelastic properties of elastomer springs are exploited to damp the stack's normal modes while providing rapid roll-off of stack transmission above these modal frequencies. The stack's transmission of base motion to top motion was measured in vacuum and compared with three-dimensional finite-element models. In one tested configuration, at 100 Hz, horizontal transmission was 10−7, vertical transmission was 3×10−6, and the cross-coupling terms were between these values. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146573
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  • 5
    Electronic Resource
    Electronic Resource
    Magnetic properties of the SmMn2(Ge1–xSix)2 system : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5233-5235 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetization and thermal expansion measurements have been carried out on the polycrystalline SmMn2(Ge1–xSix)2 system (x=0.00, 0.01, 0.02, 0.03, 0.05, 0.08, 0.10, 0.12, and 0.15) to study its magnetic properties. It is found that the temperature range of stability of the antiferromagnetic region increases with the increase of Si content. This behavior is explained as a decrease in the Mn–Mn intralayer separation. Ferro- to antiferromagnetic (T2) and antiferro- to ferromagnetic (T1) transitions are found to be first order for all the samples up to x=0.10. For x=0.15 sample the antiferro- to ferromagnetic (T1) transition is of first order while the ferro- to antiferromagnetic (T2) transition appears to be second order. A magnetic phase diagram of SmMn2(Ge1–xSix)2 has been determined. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361296
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  • 6
    Electronic Resource
    Electronic Resource
    Development of highly conductive n-type μc-Si:H films at low power for device applications (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5713-5720 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly conductive phosphorus-doped n-type hydrogenated microcrystalline silicon (μc-Si:H) films have been prepared by the usual (13.56 MHz) radio-frequency glow discharge of silane (SiH4), phosphine (PH3), and hydrogen (H2) in an ultrahigh-vacuum deposition system. The highest conductivity of the films obtained in this study is 100 S cm−1 after optimizing the hydrogen dilution ratio, chamber pressure, substrate temperature, and doping concentration of phosphorus. The formation of microcrystallinity in the material has been studied by transmission electron microscopy, x-ray-diffraction studies, and Raman spectroscopy. The volume fraction of microcrystallinity in these amorphous-microcrystalline mixed-phase materials has been estimated from Raman spectra. Sizes of the crystallites and volume fraction of microcrystallinity vary with hydrogen dilution, chamber pressure, and substrate temperature. The variations in the properties with deposition parameters have been explained in terms of the growth kinetics. The n-type μc-Si:H thin film, thus developed, has been applied in the first cell of a double-junction amorphous silicon solar cell. The prepared p-i-n–p-i-n stacked cell employing the n-type μc-Si:H film has exhibited appreciable improvement in open-circuit voltage, fill factor, and efficiency compared to the one with amorphous n layer in the inner n–p contact. Degradation of the cells prepared with and without μc-n layer has been studied. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359631
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  • 7
    Electronic Resource
    Electronic Resource
    ac conduction in conducting poly pyrrole-poly vinyl methyl ether polymer composite materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2646-2650 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Composite materials containing conducting polypyrrole and insulating poly (vinyl methyl ether) (PVME) have been synthesized by oxidative polymerization of pyrrole in ethanol using FeCl3 oxidant in the presence of PVME. The ac conductivity measurements have been carried out in the frequency range of 100 Hz to 10 MHz and in the temperature range of 110 to 350 K. The frequency dependent conductivity has been explained on the basis of a small polaron tunnelling mechanism. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363929
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  • 8
    Electronic Resource
    Electronic Resource
    Ion assisted growth and characterization of polycrystalline silicon and silicon-germanium films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4472-4476 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polysilicon films have been deposited at a low temperature by single and dual ion beam sputtering. The structural and electrical properties of as-deposited and annealed films have been characterized by x-ray diffraction, secondary ion mass spectroscopy, atomic force microscopy, and Hall mobility measurements. The films are microcrystalline with average grain size ranging from 200 to 400 Å. The films exposed to a low-energy secondary ion beam during sputtering from a silicon target have exhibited smoother surface topography and different electrical behavior than the films deposited without any secondary ion bombardment. Some preliminary studies on ion beam sputtered SiGe films using a compound target are also presented. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367209
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  • 9
    Electronic Resource
    Electronic Resource
    Magnetic transitions in Tb0.7Nd0.3Mn2Ge2 compound : The 7th joint MMM-intermag conference on magnetism and magnetic materials (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 6974-6976 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article we report a new compound, Tb0.7Nd0.3Mn2Ge2, which behaves like SmMn2Ge2, a compound with reentrant ferromagnetic order. Magnetization and thermal expansion measurements have been performed to study polycrystalline Tb0.7Nd0.3Mn2Ge2. Temperature dependent magnetization data shows that from 800 to 426 K the sample behaves like a paramagnet. A Néel transition is observed at 426 K (T4) and the antiferromagnetic phase persists until 334 K (T3). From 334 K (T3) to 277 K (T2) the sample exists in a ferromagnetic state. At 277 K (T2) the sample transforms into an antiferromagnetic phase. Interestingly, at 117 K (T1) the sample enters into a ferromagnetic-like phase. Thermal expansion study shows a sharp change in the sample dimension around T1 (125 K). This change in the dimension most likely triggers the reentrant magnetic transition (T1) observed in the magnetization measurement. The sharp change in thermal expansion suggests this transition at T1 to be of first order. The relatively small and shallow dimensional change around T2 (275 K) implies a weak first order transition. The dimensional changes found at the two transitions strongly suggest that Mn–Mn intralayer distance plays an important role in the multiple magnetic phases in Tb0.7Nd0.3Mn2Ge2. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367692
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  • 10
    Electronic Resource
    Electronic Resource
    Nonlinear spinor field in Bianchi type-I Universe filled with perfect fluid: Exact self-consistent solutions (1997)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 38 (1997), S. 5305-5318 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: Self-consistent solutions to nonlinear spinor field equations in general relativity have been studied for the case of Bianchi type-I space–time filled with perfect fluid. The initial and the asymptotic behaviors of the field functions and the metric one have been thoroughly studied. The absence of initial singularity for some types of solutions and also the isotropic mode of space–time expansion in some special cases should be emphasized. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.531944
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