ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Biotechnology and Bioengineering 32 (1988), S. 916-919 
    ISSN: 0006-3592
    Keywords: Chemistry ; Biochemistry and Biotechnology
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Additional Material: 1 Ill.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    Weinheim [u.a.] : Wiley-Blackwell
    Materials and Corrosion/Werkstoffe und Korrosion 38 (1987), S. 417-421 
    ISSN: 0947-5117
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Description / Table of Contents: Physical-chemical investigations into the protective layers formed on steel in sodium nitrite solutionsUsing a spectral analysis, metallography, X-ray spectral microanalysis and cross-section analysis the layer formed on the surface of carbon steel in aqueous sodium nitrite solutions has been studied. It has been found that the layer formed under these conditions on the steel surface is not a passive layer but a protective layer containing complex compounds of the type Fe(NH3)x(NO3)3 · yH2O. The thickness of the layer is 8 to 18 μm depending on the nitrite concentration in the neighbourhood.
    Notes: Mit Hilfe von Spektralanalyse, Metallographie, Röntgenspektralmikroanalyse und Analyse von Querschnitten wurde die auf der Oberfläche von Kohlenstoffstählen in wäßrigen Natriumnitritlösungen gebildete Schicht untersucht. Es wurde festgestellt, daß sich unter diesen Bedingungen auf der Stahloberfläche keine passive Schicht, sondern eine Schutzschicht bildet, welche komplizierte Komplexverbindungen des Typs Fe(NH3)x(NO3)3 · yH2O enthält. Die Stärke der Schicht beträgt 8-18 μm in Abhängigkeit der Nitritkonzentration in der Umgebung.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    New York, NY : Wiley-Blackwell
    International Journal of Quantum Chemistry 66 (1998), S. 435-456 
    ISSN: 0020-7608
    Keywords: semiconductor-insulator interface ; shallow donor ; extended electronic states ; scattering ; photoionization cross section ; Chemistry ; Theoretical, Physical and Computational Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: Scattering of a conduction electron by a charged shallow donor located near a semiconductor-insulator interface in the semiconductor or by a charged center embedded in the insulator is considered within the model of a hydrogenlike atom in a semi-infinite space. The interface influence is allowed for by spatial confinement of the electron envelope wave function. The impurity electrostatic image at the interface is taken into account. The problem is separable in prolate spheroidal coordinates and thus is solvable exactly. A rapidly convergent expansion is proposed for the angular eigenfunctions. The radial eigenfunctions are calculated directly by numerical integration of the radial boundary value problem. Expansions of the scattering wave function and the scattering amplitude in terms of the eigenfunctions of the problem are obtained. Using the extended and localized state wave functions, the photoionization cross section of a shallow donor near a semiconductor-insulator interface is calculated. It is presented as a superposition of the oscillator strengths of transitions to the partial extended eigenstates that constitute the scattering wave function. Near the interface, the cross section is enhanced significantly and redistributed over the direction of photoionized electron escape. The photoionization threshold follows the localized state energy varying with the donor-interface distance.   © 1998 John Wiley & Sons, Inc. Int J Quant Chem 66: 435-456, 1998
    Additional Material: 17 Ill.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...