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  • 2005-2009  (96)
  • 1995-1999  (93)
  • 1985-1989  (42)
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  • 11
    Electronic Resource
    Electronic Resource
    Direct observation of the current oscillation in a dc SQUID (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3786-3788 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The current waveforms of the self-resetting oscillation in a dc superconducting quantum interference device (SQUID) are observed by means of a Josephson sampling system. The frequency of the oscillation is around 60 GHz. The time period of the self-resetting oscillation is experimentally measured as a function of the bias current to the SQUID. Theoretical and numerical analyses are presented for the self-resetting oscillation in the dc SQUID.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337545
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  • 12
    Electronic Resource
    Electronic Resource
    Intrinsic Josephson junctions in oxygen-deficient YBa2Cu3O7−δ film deposited on a substrate step (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3740-3744 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using c-axis-oriented oxygen-deficient YBa2Cu3O7−δ film deposited across a low-angle step on a SrTiO3 substrate, we successfully demonstrated intrinsic Josephson effects. In addition to several voltage jumps of large amplitudes (a few millivolts) and remarkable hysteresis on the dc current–voltage curves, we observed upturns on the current–voltage curves under microwave irradiation which appeared at increasingly high voltages with increasing microwave power. We proposed to explain this observation in terms of high-order microwave-induced Shapiro steps. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369741
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  • 13
    Electronic Resource
    Electronic Resource
    Photoionization cross section of InP:Fe (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3933-3936 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spectral dependence of the photoionization cross section of Fe doped in InP is determined by photocapacitance spectroscopy. The optical process of the carrier emission from the deep acceptor level of Fe is discussed from the results. For the crystal-field-split level of Fe2+:5E, the photoionization cross sections for the fundamental transitions of 5E→Γ1 and Γ15→5E are adequately described by the Lucovsky model. Those optical thresholds are 0.63 and 0.78 eV, respectively, at 77 K. In comparison with the deep-level transient spectroscopy measurements, the following conclusions are obtained. The energy separation between the Fe acceptor level and the conduction-band edge is constant, but that between the Fe level and the valence-band edge varies correspondingly to the temperature variation of the InP band-gap energy. The fact that there is no difference between the optical and thermal activation energies for the 5E→Γ1 transition indicates that the Fe acceptor level is not perturbed by the InP lattice vibration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343358
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  • 14
    Electronic Resource
    Electronic Resource
    Magneto-optical properties of Bi-substituted epitaxial rare-earth iron garnet thick films (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3256-3258 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films of (Yb,Tb,Bi)3Fe5O12 show excellent characteristics of the Faraday rotator at the wavelength of 1.3 μm; the rotation is −1800 deg/cm, insertion loss 0.3 dB, isolation 38 dB, and the temperature dependence of the Faraday rotation is 0.060 deg/K at room temperature. The films are grown epitaxially on the (Gd,Ca)3(Ga,Mg,Zr)5O12 substrates, from the melt in the flux PbO/B2O3/Bi2O3. The melt contains rare-earth ions (R=Y,Gd,Er,Dy,Tm,Yb,Lu) as c-site components of rare-earth iron garnets, and Fe and Ga+Al as a- and d-site components. The obtained film thickness is in the range 300–400 μm without appreciable defects on the substrate, with a 2-in. diameter. This technology will lead to the efficient production of the optical isolator used in optical systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338873
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  • 15
    Electronic Resource
    Electronic Resource
    Liquid phase epitaxial growth of Fe-doped semi-insulating InGaAsP lattice matched to InP over the entire composition range (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 574-576 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe-doped semi-insulating In1−x Gax Asy P1−y (0≤y≤1, y=2.2x) epitaxial layers lattice matched to InP with nearly intrinsic carrier concentrations have been successfully grown over the entire composition range by liquid phase epitaxy. Maximum resistivities as high as 8×107 Ω cm for InP, 2×105 Ω cm for InGaAsP (y=0.57), and 2×103 Ω cm for InGaAs (y=1) have been achieved. The critical growth temperature necessary to obtain semi-insulating layers significantly decreased as the composition was varied from y=0 to y=1. The Fe doping characteristics are well defined by the composition dependence of the Fe distribution coefficient.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99861
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  • 16
    Electronic Resource
    Electronic Resource
    Exact determination of superlattice structures by small-angle x-ray diffraction method (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 742-744 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of In1−xGaxAsyP1−y/InP superlattices (x=0.27 and y=0.60) is investigated by small-angle x-ray diffraction method. The interference peaks due to the superlattice structure were clearly observed up to the 6th order. The period of the superlattice was determined from the angular positions of the peaks using the modified Bragg's law. By analyzing the diffraction patterns of the first and the secondary peaks according to the optical multilayer theory, the thickness of each component (In1−xGaxAsyP1−y and InP) was uniquely determined within an error of ±1 A(ring). This method can be used to determine any type of superlattice structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99342
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  • 17
    Electronic Resource
    Electronic Resource
    Room-temperature exciton optical absorption peaks in InGaAsP/InP multiple quantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1353-1355 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We grew In1−xGaxAsyP1−y/InP quantum wells (QWs) by low-pressure metalorganic vapor phase epitaxy. The In1−xGaxAsyP1−y layer was closely lattice matched to InP with a composition of y=0.9 (x=0.47y). We investigated structural imperfections such as composition fluctuations, interface roughness, and nonperiodicity analyzing the low-temperature photoluminescence linewidth. We found that the InGaAsP layer composition fluctuated, causing about 5 meV inhomogeneity in the exciton energy level in QWs wider than about 3 nm. Since we obtained very smooth interfaces with less than one monolayer of fluctuation and excellent periodicity by lowering growth temperature to 570 °C, the inhomogeneity of the exciton energy level could be held at 6 meV for 20-period 10-nm multiple QWs. As a result, despite composition fluctuations, a clear room-temperature exciton optical absorption peak was observed at 1.5 μm for the first time to our knowledge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100713
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  • 18
    Electronic Resource
    Electronic Resource
    Evaluation of exciton absorption peak broadening factors in InGaAsP/InP multiple quantum wells (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2290-2292 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We evaluated the magnitude of broadening factors of ground-state exciton absorption peaks in In1−xGaxAsyP1−y/InP (x=0.47y) multiple quantum wells (MQW's) with about 10 nm wells. The absorption peaks broadened with a decrease of y. Analyzing the absorption peak broadening with increasing temperature, the thermal broadening factor at 300 K was found to be about 9 meV and composition independent. Analyzing the photoluminescence linewidth at 4.2 K, it was found that composition fluctuations in the well caused an inhomogeneity of the exciton energy level of 4.4 meV for the y=1.0 MQW and 7.5 meV for the y=0.6 MQW, being the greatest contributors to inhomogeneous broadening. We conclude that the exciton absorption peak broadening with a decrease of y is primarily due to the increase of composition fluctuations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100256
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  • 19
    Electronic Resource
    Electronic Resource
    Photoionization cross section of In0.49Ga0.51P:Fe (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 529-531 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We determined spectral dependence of the photoionization cross section of the Fe acceptor in In0.49Ga0.15P by photocapacitance spectroscopy. As a result of the alloy effect we observed the nonexponential photocapacitance transient. We treated it with a model of the energetically broadened defect level. Optical thresholds for 5E and 5T2 of the crystal-field-split Fe acceptor level are 0.78 and 1.15 eV at 77 K. The small difference of 40 meV between the optical and thermal activation energies for the transition from the valence band to 5E reveals the weak coupling between the Fe acceptor level and the lattice vibration of InGaP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100920
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  • 20
    Electronic Resource
    Electronic Resource
    Mixing at terahertz frequency band using YBa2Cu3O7−δ bicrystal Josephson junctions (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 707-709 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using high-Tc Josephson junctions made of YBa2Cu3O7−δ deposited across MgO bicrystal boundary, at terahertz (THz) frequency band, we demonstrated both fundamental and harmonic mixing. Radiation from a far-infrared laser was coupled to the junction, which was integrated with a planar bow-tie antenna, via an extended hyperhemispherical silicon lens. Fundamental mixing manifested itself in the junction's dc current–voltage (I–V) curve as a third Shapiro step in addition to those two induced by the THz laser lines from a slightly misaligned resonator. In harmonic mixing between a THz laser line and a microwave local oscillator, the highest harmonic number we could get was 490 with a signal-to-noise ratio of 9 dB at the intermediate frequency. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119836
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