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  • Copernicus  (11)
  • American Institute of Physics (AIP)  (9)
  • Nürnberg: Institut für Arbeitsmarkt- und Berufsforschung (IAB)
  • 2005-2009  (11)
  • 2000-2004  (9)
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  • 1
    Electronic Resource
    Electronic Resource
    Spectral blueshift and improved luminescent properties with increasing GaSb layer thickness in InAs–GaSb type-II superlattices (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2185-2188 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the photoluminescence spectroscopy (PL) and Fourier transform infrared absorbance spectroscopy characterization of a large set of InAs/GaSb type-II strained layer superlattice (SLS) samples. The samples are designed to probe the effect of GaSb layer thickness on the optical properties of the SLS, while the InAs-layer thickness is held fixed. As the GaSb layer thickness is increased, we observe a spectral blue shift of the PL peaks that is accompanied by an increase in intensity, narrower linewidths, and a large reduction in the temperature sensitivity of the luminescence. These effects occur despite a significant reduction in the electron-hole wave function overlap as the GaSb layer thickness is increased. In addition, we compare the results of empirical pseudopotential model (EPM) calculations to the observed blueshift of the primary band gap. The EPM calculations are found to be in very good agreement with the observed data. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337918
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  • 2
    Electronic Resource
    Electronic Resource
    Improved light out-coupling in organic light emitting diodes employing ordered microlens arrays (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3324-3327 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that ordered microlens arrays with 10 μm diam poly-dimethyl-siloxane lenses attached to glass substrates increase the light output of organic light emitting devices (OLED) by a factor of 1.5 over unlensed substrates. The lenses, which are considerably smaller than, and not aligned to the OLEDs, outcouple light that is emitted outside of the escape cone of the substrate. We show that an electrophosphorescent device based on a fac tris(2-phenylpyridine)Iridium (Ir(ppy)3) doped emitting layer has its external quantum efficiency increased from 9.5% using a flat glass substrate, to 14.5% at low current densities using a substrate with microlenses. No change in the emission spectrum is observed for different viewing angles using the lens arrays. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1435422
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  • 3
    Electronic Resource
    Electronic Resource
    Dwell-time related effects in focused ion beam synthesis of cobalt disilicide (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 57-62 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of the high current density of a focused ion beam on the ion beam synthesis of CoSi2 layers has been investigated. After 35 keV Co+ or 70 keV Co2+ implantation into a heated Si(111) substrate and subsequent annealing, the layers have been investigated by scanning electron microscopy and Rutherford backscattering spectroscopy (RBS). It is shown that the mode of beam scanning influences the CoSi2 layer formation significantly. At a given substrate temperature, a sufficient low dwell time is required to obtain a continuous layer rather than a laterally disrupted structure. With increasing target temperature, the dwell-time window becomes less restricted. The results are discussed in terms of damaging and dynamic annealing of the silicon crystal. RBS channeling investigations demonstrate that continuous or disrupted CoSi2 layers are formed when the substrate remains crystalline or becomes amorphous, respectively. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371826
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  • 4
    Electronic Resource
    Electronic Resource
    Optically pumped integrated absorber 3.4 μm laser with InAs-to-InGaAsSb type-II transition (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 302-304 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report optically pumped lasing at λ∼3.4 μm from an integrated absorber structure in which the electrons confined in the InAs quantum wells recombine with holes in adjacent InGaAsSb layers to provide the gain. This type-II laser exhibits an estimated photon-to-photon conversion rate of ∼24% at 85 K. The self-consistent empirical pseudopotential method calculations suggest that Coulomb attraction can lead to a strong enhancement in carrier overlap, and the resulting small shift in transition energy is consistent with that observed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1385581
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  • 5
    Electronic Resource
    Electronic Resource
    Mechanism of diffusional transport during ion nitriding of aluminum (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1404-1406 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of diffusional transport during low-energy ion nitriding of aluminum has been investigated using marker and isotope sequence techniques in connection with ion-beam analysis. For an ion energy of 1 keV and a temperature of 400 °C, it is shown that the nitride grows at the surface with aluminum being supplied by diffusion from the underlying bulk. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126070
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  • 6
    Electronic Resource
    Electronic Resource
    Mode identification in spherical microcavities doped with quantum dots (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3253-3255 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using imaging spectroscopy at the diffraction limit, a polarization-sensitive mode mapping allows the experimental identification of transverse electric and transverse magnetic modes for spherical microcavities. The method is applied to microspheres surface covered by CdSe quantum dots. A theoretical estimate of the minimum mode volume excited by a single, anisotropic quantum dot is given with Q/V larger than 1000 μm−3 for the parameters of the experimentally studied microcavities. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1475364
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  • 7
    Electronic Resource
    Electronic Resource
    Growth of low-stress cubic boron nitride films by simultaneous medium-energy ion implantation (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 55-57 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that the intrinsic stress in cubic boron nitride films can be significantly relaxed during growth by simultaneous medium-energy ion implantation. The stress in the growing film has been studied in situ using cantilever curvature measurements and has been reduced to below 2 GPa by simultaneous Ar+ or N+ ion implantation with an energy of 70 and 35 keV, respectively. The resulting cubic boron nitride films show an increased long-term stability. The results reveal that the stress in cBN is not reduced due to segregation of boron at grain boundaries. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1430268
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  • 8
    Electronic Resource
    Electronic Resource
    Absorbance spectroscopy and identification of valence subband transitions in type-II InAs/GaSb superlattices (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 409-411 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the molecular-beam epitaxy growth, as well as both the structural and optical characterization of a set of InAs/GaSb type-II strained-layer superlattice samples, in which the GaSb layer thickness is systematically increased. Absorbance spectroscopy measurements show well-defined features associated with transitions from the various valence subbands to the lowest conduction subband, and also a significant blueshift of the band edge when the GaSb layers thickness is increased. Empirical pseudopotential method calculations are shown to successfully predict the blueshift and help identify the higher-energy transitions. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125770
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  • 9
    Electronic Resource
    Electronic Resource
    The nitrogen transport in austenitic stainless steel at moderate temperatures (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2194-2196 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for the transport of nitrogen in austenitic stainless steel at temperatures around 400 °C is presented and discussed. The model considers the diffusion of nitrogen under the influence of trapping and detrapping at trap sites formed by local chromium. Nitrogen depth profiles simulated on the basis of the model with diffusion and detrapping activation energies of 1.1 and 1.45 eV, respectively, are in good agreement with experimental nitrogen profiles. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126294
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  • 10
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    Problems with estimating oceanic heat transport – conceptual remarks for the case of Fram Strait in the Arctic Ocean (2009)
    Copernicus
    Details
    Publication Date: 2009-05-18
    Description: While the concept of oceanic heat transport – or rather heat transport divergence – is known since long, it is sometimes applied inaccurately. Often temperature transports are computed across sections with unbalanced volume flow which then depend entirely on the choice of the temperature scale. The consequences of such arbitrariness are demonstrated with a simple calculation exercise for the passages to the Arctic Ocean. To circumvent the arising difficulties for the Fram Strait as an example we propose a stream tube concept to define a net zero volume flow section which can, with coarse assumptions, be used to determine oceanic heat transport by the Atlantic water flow. Weaknesses of this approach and consequences for observational strategies are discussed.
    Print ISSN: 1812-0806
    Electronic ISSN: 1812-0822
    Topics: Geosciences
    Published by Copernicus on behalf of European Geosciences Union.
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