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  • 1
    Electronic Resource
    Electronic Resource
    Highly oriented indium tin oxide films for high efficiency organic light-emitting diodes (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5371-5376 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly oriented indium tin oxide (ITO) thin films were grown by pulsed-laser deposition (PLD) on glass and single-crystal yttria-stabilized zirconia (YSZ) substrates. The structural, electrical, and optical properties of these films were investigated as a function of oxygen partial pressure. Films were deposited at substrate temperature of 300 °C in mixed gases (12 mTorr of argon and 1–50 mTorr of oxygen) using a KrF excimer laser (248 nm and 30 ns full width at half maximum) at a fluence of 1.2 J/cm2. ITO films (300 nm thick), deposited by PLD on YSZ at 300 °C in a gas mixture of 12 mTorr of argon and 6 mTorr of oxygen, exhibit a low electrical resistivity (1.6×10−4 Ω cm) with a high transparency (∼74%) at 550 nm. ITO films deposited on both glass and YSZ substrates have been used as an anode contact in organic light-emitting diodes. A comparison of the device performance for the two substrates shows that the device fabricated on the ITO/YSZ has a higher external quantum efficiency than that of the device fabricated on the ITO glass.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1461068
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  • 2
    Electronic Resource
    Electronic Resource
    Microwave dielectric properties of strained (Ba0.4Sr0.6)TiO3 thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5448-5451 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric Ba0.4Sr0.6TiO3 (BST) thin films grown on (001) MgO by pulsed laser deposition show a strong correlation between their structure and their microwave dielectric properties. Epitaxially grown BST films are observed by x-ray diffraction to be tetragonally distorted. The oxygen deposition pressure affects the magnitude of the tetragonal distortion (the ratio of in-plane and surface normal lattice parameters, D=a/c) of the deposited BST films. D varied from 0.996 to 1.004 at oxygen deposition pressure of 10–800 mTorr. The dielectric properties of BST films measured at microwave frequencies (1–20 GHz) exhibit an oxygen deposition pressure dependent dielectric constant (ε=100–600), and quality factor Q (1/tan δ=10–60). The BST film grown at the oxygen deposition pressure of 200 mTorr exhibits the highest figure of merit [% tuning in ε×Q0V, where % tuning is 100×(ε0−εb)/ε0, and ε0 and εb are dielectric constant at 0 and 80 kV/cm]. This corresponds to the film with the lowest distortion (D=1.001). The observed microwave properties of the films are explained by a phenomenological thermodynamic theory based on the strain along in-plane direction of the films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1314619
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  • 3
    Electronic Resource
    Electronic Resource
    Measurements of the electron temperature by the Thomson scattering system on the Hanbit magnetic mirror device : Papers from the thirteenth topical conference on high temperature plasma diagnostics (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 1118-1121 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A Thomson scattering system on the Hanbit magnetic mirror device has been installed to measure the electron temperature and density of the plasma in the central cell. The configuration is based on a standard 90° scattering scheme. The optical system consists of a Q-switched Nd:YAG laser, input optics, collection optics, spectrograph optics, detectors, and a data acquisition system. Although the laser beam path is about 50 m long and the background emissions are not low, the electron temperature measurements have been made at a single point on a shot-by-shot basis, in which the stray light was considerably suppressed by using a beam dump, a viewing dump, and baffles. The measured electron temperature is about 50–70 eV in experiments for plasma production and heating by ICRF of 200-kW-rf power using a slot antenna. A description of the installed system and the experimental results are presented. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1321749
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  • 4
    Electronic Resource
    Electronic Resource
    Anomalous oxygen annealing effects on La0.7Ca0.3MnO3 films grown on MgO substrates (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 353-355 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial La0.7Ca0.3MnO3 thin films were grown on MgO (001) substrates by pulsed laser deposition. The as-grown films exhibit a metal–insulator transition at temperatures ranging from 200 to 230 K. Surprisingly, the transition temperature of postannealed films under O2 at 900 °C decreases by more than 100 K, featured with the colossal magnetoresistance. The O2 annealed films also show thermal hysteresis in resistivity and nonlinear I–V behavior. These results are interpreted in terms of Mn deficiency induced by large structural difference between film and substrate, and also discussed in viewpoint of a percolative phase transition. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1338972
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  • 5
    Electronic Resource
    Electronic Resource
    Microwave properties of tetragonally distorted (Ba0.5Sr0.5)TiO3 thin films (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1185-1187 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A strong correlation is observed between the structure and the microwave dielectric properties of epitaxial Ba0.5Sr0.5TiO3 (BST) thin films deposited onto (001) MgO by pulsed laser deposition. Films were deposited at 750 °C in an oxygen pressure that was varied from 3 to 1000 mTorr. The tetragonal distortion (ratio of in-plane and surface normal lattice parameters, D=a/c) of the films depends on the oxygen deposition pressure. D varied from 0.996 at 3 mTorr to 1.003 at 800 mTorr. At microwave frequencies (1–20 GHz), BST films with low distortion have higher dielectric constants (ε∼500), and lower dielectric loss (tan δ∼0.02) compared to films with higher distortion. The correlation of the microwave properties with the film structure can be attributed to stresses and polarizability in the film. The BST film grown at the oxygen deposition pressure of 50 mTorr exhibits a large dielectric constant change and a low dielectric loss at the same time, which corresponds to the film in low stress (D=1.0004). For tunable microwave applications, BST films with low stress are desirable in order to achieve both low dielectric loss and large tunability. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125977
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of quench depth on grain structure in quiescently ordered block copolymers (2001)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 114 (2001), S. 10196-10211 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Grain growth in a polystyrene–polyisoprene block copolymer melt is studied by time-resolved depolarized light scattering after a quiescent quench from the disordered to the ordered state. At shallow quench depths, classical nucleation and growth kinetics are observed. Grains comprising the equilibrated ordered phase nucleate and grow by consuming the surrounding disordered phase. In contrast, deep quenches result in the formation of disorganized grains with an average order parameter that is well below the equilibrium value. Small angle neutron scattering and rheological experiments were conducted to facilitate the interpretation of the light scattering data. We show that the nonequilibrium grain structure formed during deep quenches is due to extremely high nucleation density. Under these circumstances, the space required for the formation of equilibrated grains is unavailable. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1357796
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